SPN4526 DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=12A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 12 A Drain Current – Continuous (TC=100℃ ) 8.5 IDM Drain Current – Pulsed1 60 PD Power Dissipation (TC=25℃ ) 3 W Power Dissipation – Derate above 25℃ --- TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient2 41.7 D D D D S1 S S SPN4526 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=10A --- 8.4 12 mΩ VGS=4.5V,ID=8A --- 12.3 18 GFS Forward Transconductance VDS=5V, ID=10A --- 75 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=20V, VGS=0V, f=1MHz --- 1780 --- pF Coss Output Capacitance --- 209 --- Crss Reverse Transfer Capacitance --- 160 --- Switching Characteristics4 td(on) Turn-On Delay Time VDS=20V, , RGEN=3Ω, VGS=10V --- 6.4 --- ns tr Rise Time --- 17.2 --- ns td(off) Turn-Off Delay Time --- 29.6 --- ns tf Fall Time --- 16.8 --- ns Qg Total Gate Charge VGS=10V, VDS=20V, ID=10A --- 30 --- nC Qgs Gate-Source Charge --- 4.2 --- nC Qgd Gate-Drain “Miller” Charge --- 9.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=10A,TJ=25℃ --- --- 1.2 V SPN4526 All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance SPN4526 0086-0755-8278-9056 All d ata sheet.com