SPP20N60C3 INFINEON | Alldatasheet

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SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data Cool MOS™ Power Transistor VDS @ Tjma x 650 V RDS(on) 0.19 Ω ID 20.7 A Feature

  • New revolutionary high voltage technology
  • Worldwide best RDS(on) in TO 220
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability
  • Improved transconductance
  • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO262-3-1 P-TO263-3-2P-TO220-3-31 P-TO220-3-1 P-TO220-3-31 1 2 3 Marking 20N60C3 20N60C3 20N60C3 20N60C3 Type Package Ordering Code SPP20N60C3 P-TO220-3-1 Q67040-S4398 SPB20N60C3 P-TO263-3-2 Q67040-S4397 SPI20N60C3 P-TO262-3-1 Q67040-S4550 SPA20N60C3 P-TO220-3-31 Q67040-S4410 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 20.7 13.1 20.71) 13.11) A Pulsed drain current, tp limited by Tjma x ID puls 62.1 62.1 A Avalanche energy, single pulse ID=10A, VDD =50V EAS 690 690 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=20A, VDD =50V EAR 1 1 Avalanche current, repetitive tAR limited by Tjma x IAR 20 20 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 W SPP_BSPP_B_I Operating and storage temperature Tj , Tstg -55...+150 °C

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 K/W Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS V GS =0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS V GS =0V, ID=20A - 700 - Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS V DS =600V, VGS =0V, Tj=25°C Tj=150°C 0.1 100 µA Gate-source leakage current IGSS V GS =30V, VDS =0V - - 100 nA Drain-source on-state resistance RDS(on) V GS =10V, ID=13.1A Tj=25°C Tj=150°C 0.16 0.43 0.19 Ω Gate input resistance R G f=1MHz, open drain - 0.54 -

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs V DS ≥2*ID*RDS(on)max, ID=13.1A - 17.5 - S Input capacitance C iss V GS =0V, V DS =25V, f=1MHz - 2400 - pF Output capacitance C oss - 780 - Reverse transfer capacitanceC rss - 50 - Effective output capacitance,5) energy related Co(er) V GS =0V, V DS =0V to 480V - 83 - Effective output capacitance,6) time related Co(tr) - 160 - Turn-on delay time td(on) V DD =380V, V GS =0/13V, ID=20.7A, R G =3.6Ω , Tj=125 - 10 - ns Rise time tr V DD =380V, V GS =0/13V, ID=20.7A, R G =3.6Ω - 5 - Turn-off delay time td(off) - 67 100 Fall time tf - 4.5 12 Gate Charge Characteristics Gate to source charge Q gs V DD =480V, ID=20.7A - 11 - nC Gate to drain charge Q gd - 33 - Gate charge total Qg V DD =480V, ID=20.7A, V GS =0 to 10V - 87 114 Gate plateau voltage V(plateau) V DD =480V, ID=20.7A - 5.5 - V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR *f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC =25°C - - 20.7 A Inverse diode direct current, pulsed ISM - - 62.1 Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time trr VR =480V, IF=IS , diF/dt=100A/µs - 500 800 ns Reverse recovery charge Q rr - 11 - µC Peak reverse recovery currentIrrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.00769 0.00769 K/W Cth1 0.0003763 0.0003763 Ws/K Rth2 0.015 0.015 Cth2 0.001411 0.001411 Rth3 0.029 0.029 Cth3 0.001931 0.001931 Rth4 0.114 0.163 Cth4 0.005297 0.005297 Rth5 0.136 0.323 Cth5 0.012 0.008453 Rth6 0.059 2.526 Cth6 0.091 0.412 SPP_B_I SPP_B_I External Heatsink Tj Tcase Tamb Cth1 Cth2 Rth1 Rth,n Cth,n Ptot (t)

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data

1 Power dissipation

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 200 W 240 SPP20N60C3 Ptot

2 Power dissipation FullPAK

Ptot = f (TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

4 Safe operating area FullPAK

ID = f (VDS ) parameter: D = 0, TC = 25°C 10 0 10 1 10 2 10 3 V VDS -2 10 -1 10 0 10 1 10 2 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data

5 Transient thermal impedance

ZthJC = f (tp) parameter: D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 K/WZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

6 Transient thermal impedance FullPAK

ZthJC = f (tp) parameter: D = tp/t 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 7 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS A ID 4,5V 5,5V 6,5V 20V 10V 8 Typ. output characteristic ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS 0 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS A ID 4.5V 5.5V 20V 10V

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 5 10 15 20 25 30 A 40 ID 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 Ω 1.5 RDS(on) 4V 4.5V 5.5V 6.5V 20V

10 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 SPP20N60C3 RDS(on) typ 98% 11 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs 0 1 2 3 4 5 6 7 V 9 VGS A ID 150°C 25°C 12 Typ. gate charge VGS = f (QGate) parameter: ID = 20.7 A pulsed 0 20 40 60 80 100 nC 140 QGate V SPP20N60C3 VGS 0,8 VDS max DS maxV0,2

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data

13 Forward characteristics of body diode

IF = f (VSD) parameter: Tj , tp = 10 µs VSD -1 10 0 10 1 10 2 10 A SPP20N60C3 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 14 Typ. switching time t = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =3.6Ω 0 4 8 12 16 A 24 ID 0 10 1 10 2 10 ns t tr td(off) td(on) tf 15 Typ. switching time t = f (RG ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=20.7 A 0 5 10 15 20 25 30 Ω 40 RG 0 10 1 10 2 10 3 10 ns t td(off) td(on) tr tf 16 Typ. drain current slope di/dt = f(R G ), inductive load, Tj = 125°C par.: V DS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 R G 500 1000 1500 2000 2500 3000 3500 4000 A/µs 5000 di/dt di/dt(on) di/dt(off)

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data 17 Typ. drain source voltage slope dv/dt = f(R G ), inductive load, Tj = 125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 RG 100 V/ns 150 dv/dt dv/dt(on) dv/dt(off) 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C par.: V DS =380V, VGS =0/+13V, R G =3.6Ω 0 3 6 9 12 15 A 21 ID 0.01 0.02 0.03 0.04 0.05 0.06 mWs 0.08 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses 19 Typ. switching losses E = f(R G ), inductive load, Tj=125°C par.: VDS =380V, VGS =0/+13V, ID=20.7A 0 5 10 15 20 25 30 Ω 40 RG 0.05 0.1 0.15 0.2 0.25 0.3 mWs 0.4 E Eon* Eoff *) Eon includes SPD06S60 diode commutation losses

20 Avalanche SOA

IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR A IAR Tj(Start)=25°C Tj(Start)=125°C

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data

21 Avalanche energy

EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 100 150 200 250 300 350 400 450 500 550 600 mJ 750 EAS

23 Avalanche power losses

PAR = f (f ) parameter: E AR =1mJ 10 4 10 5 10 6 Hz f 100 200 300 W 500 PAR

22 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP20N60C3 V(BR)DSS 24 Typ. capacitances C = f (VDS ) parameter: V GS =0V, f=1 MHz 0 100 200 300 400 V 600 VDS 0 10 1 10 2 10 3 10 4 10 5 10 pF C Ciss Coss Crss

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data 25 Typ. C oss stored energy Eoss=f(VDS ) 0 100 200 300 400 V 600 VDS µJ Eoss Definition of diodes switching characteristics

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data P-TO-220-3-1 A BA0.25 M 2.8 15.38±0.6 2.54 0.75±0.1 ±0.131.27 4.44 B 9.98±0.48 0.05 All metal surfaces tin plated, except area of cut. C ±0.2 10±0.4 3.7 C 0.5±0.1 ±0.95.23 13.5±0.5 Metal surface min. x=7.25, y=12.3 ±0.2 ±0.221.17 ±0.22.51 P-TO-263-3-2 (D2-PAK)

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data P-TO-262-3-1 (I2-PAK) BA0.25 M Typical 2.54 3 x 0.75±0.1 1.05 1.27 B 9.25±0.2 0.05 Metal surface min. X = 7.25, Y = 6.9 C 11.6±0.3 10 ±0.2 C 2.4 0.5±0.1 ±0.24.55 13.5±0.5 All metal surfaces tin plated, except area of cut. ±0.31 8.51) 2 x 4.4 7.551) 0...0.15 0...0.3 2.4 A P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01)

SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.