SPF-5043Z RFMD | Alldatasheet
Document overview
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Technical content
Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPF-5043Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER The SPF-5043Z is a high performa nce pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. Th e on-chip active bias network pro- vides stable current over temperature and process threshold voltage vari- ations. The SPF-5043Z offers ultra-lo w noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specificatio n make it ideal for high dynamic range receivers. Gain & NF versus Frequency Broadband Application Circuit (5V, 46m A) 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 Frequency (MHz) Gain (dB) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 NF (dB) Gain NF Ultra-Low Noise Figure=0.8dB @ 900MHz Gain=18.2dB @ 900MHz High Linearity: OIP3=35dBm @ 1900MHz P1dB=2 1dBm @ 1900MHz Single-Supply Operation: 5V @ I DQ=46mA Flexible Biasing Options: 3V to 5V, Adjustable Current Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM, WiMAX Receivers Low Noise, High Linearity Gain Block Applications EDS-105475 Rev D Preliminary RoHS Compliant and Pb-Free Product SPF-5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Ampli- fier Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Power Gain 18.2 dB 0.9GHz 12.9 dB 1.96GHz Output Power at 1dB Compression 20.0 dBm 0.9GHz 21.0 dBm 1.9GHz Output Third Order Intercept Point 33.0 dBm 0.9GHz 35.0 dBm 1.9GHz Noise Figure 0.80 dB 0.9GHz 0.80 dB 1.9GHz Input Return Loss -16.0 dB 0.9GHz -17.5 dB 1.9GHz Output Return Loss -17.5 dB 0.9GHz -16.5 dB 1.9GHz Reverse Isolation -23.5 dB 0.9GHz -19.0 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current (Quiescent) 46 mA Thermal Resistance (junction to lead) 125 °C/W Test Conditions: V D=5V, IDQ=46mA, OIP 3 Tone Spacing=1MHz, P OUT per tone=0dBm ZS=ZL=50 Ω, 25°C, Broadband Application Circuit
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=5V , ID=46mA Typical RF Performance - Broadband Application Circuit with VD=3V , ID=25mA Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD)6 0 m A Max Device Voltage (VD)5 . 5 V Max RF Input Power 25 dBm Max Dissipated Power 330 mW Max Junction Temperature (TJ)1 5 0 ° C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -65 to +150 °C ESD Rating - Human Body Model (HBM) Class 1A Moisture Sensitivity (MSL) MSL 1 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l and TL=Source lead Temperature Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz 3.8 GHz Test Conditions: VD=5V , IDQ=46mA, OIP 3 Tone Spacing=1MHz, P OUT per tone=0dBm, T L=25°C, ZS=ZL=50 Ω, *Bias Tee Data @ 100MHz Parameter Unit 0.1 GHz* 0.4 GHz 0.9 GHz 1.5 GHz 1.9 GHz 2.2 GHz 2.5 GHz 3.5 GHz 3.8 GHz Test Conditions: VD=3V , IDQ=25mA, OIP 3 Tone Spacing=1MHz, P OUT per tone=0dBm, T L=25°C, ZS=ZL=50 Ω, *Bias Tee Data @ 100MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=5V , ID=46mA NF versus Frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) NF (dB) 25°C 85°C OIP3 versus Frequency (0dBm/tone, 1MHz spacing) 24.0 28.0 32.0 36.0 40.0 44.0 Frequency (GHz) OIP3 (dBm) -40°C 25°C 85°C P1dB versus Frequency 15.0 17.0 19.0 21.0 23.0 25.0 Frequency (GHz) P1dB (dBm) -40°C 25°C 85°C Device Current versus Voltage 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 VD (V) ID (mA) -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=5V , ID=46mA S12 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S12 (dB) -40°C 25°C 85°C S22 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S22 (dB) -40°C 25°C 85°C S11 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S11 (dB) -40°C 25°C 85°C S21 versus Frequency 4.0 8.0 12.0 16.0 20.0 24.0 Frequency (GHz) S21 (dB) -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=5V , ID=46mA ACP vs. Channel Power @880MHz -90.0 -80.0 -70.0 -60.0 -50.0 -40.0 -30.0 Channel Power (dBm) ACP (dBc) -40°C 25°C 85°C 880MHz IS95 Source IS-95 with 9 DPCH ACP vs. Channel Power @2140MHz -80.0 -70.0 -60.0 -50.0 -40.0 -30.0 Channel Power (dBm) ACP (dBc) -40°C 25°C 85°C System WCDMA with 64 DPCH OIP3 versus Power (900MHz, 1MHz spacing) 20.0 24.0 28.0 32.0 36.0 40.0 Output Power per Tone (dBm) OIP3 (dBm) -40°C 25°C 85°C OIP3 versus Power (1900MHz, 1MHz spacing) 20.0 24.0 28.0 32.0 36.0 40.0 Output Power per Tone (dBm) OIP3 (dBm) -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=3V , ID=25mA NF vs. Frequency 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) NF (dB) 25°C 85°C P1dB versus Frequency 12.0 14.0 16.0 18.0 20.0 22.0 Frequency (GHz) P1dB (dBm) -40°C 25°C 85°C OIP3 versus Frequency (0dBm/tone, 1MHz spacing) 22.0 26.0 30.0 34.0 38.0 42.0 Frequency (GHz) OIP3 (dBm) -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance - Broadband Application Circuit with VD=3V , ID=25mA S12 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S12 (dB) 25°C -40°C 85°C S22 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S22 (dB) -40°C 25°C 85°C S11 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S11 (dB) -40°C 25°C 85°C S21 versus Frequency 4.0 8.0 12.0 16.0 20.0 24.0 Frequency (GHz) S21 (dB) -40°C 25°C 85°C
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. De-embedded Device S-parameters (Bias Tee Data) S11 versus Frequency (5V 46mA) S22 versus Frequency (5V 46mA) Gmax versus Frequency (5V,46mA) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Frequency (GHz) Gmax, Gain (dB) Gmax Gain
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. S11 versus Frequency (3V 25mA) S22 versus Frequency (3V 25mA) Gmax versus Frequency (3V, 25mA) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Frequency (GHz) Gmax, Gain (dB) Gmax Gain
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout and Bill of Materials Application Schematic (400MHz to 3000MHz) RFin 125610-A SOT-343 RFout Vs GND Bill of Materials (SPF-5043Z, 400-3000MHz) C1 TAJB104KLRH, Rohm, 0.1uF C2 MCH185A101JK, Rohm, 100pF C3 MCH185A101JK, Rohm, 100pF C4 MCH185A101JK, Rohm, 100pF L1 LL1608-FSR10J, Toko, 100nH PCB 125610-A
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Part Identification Suggested Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances.
Ordering Information
1R F O U T / B I A S RF output and Bias pin. This pin is DC coupled and matched to 50 Ω. Bias is applied through this pin. 2,4 GND Connection to ground. 3R F I N RF input pin. This pin is DC coupled and matched to 50 Ω. An external DC block is required. Part Number Description Reel Size Devices/Reel SPF-5043Z Lead Free, RoHS Compliant 7” 3000 SPF-5043Z-EVB1 400MHz to 3000MHz Evaluation Board N/A N/A
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.