RF2878_1 RFMD | Alldatasheet
Document overview
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Technical content
Features
Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 6.0V Power Supply 150MHz to 2500MHz Opera- tion Extremely Small SOT 5-Lead Package
Applications
TDMA/CDMA/FM Cellular PCS LNA Low Noise Transmit Driver Amplifier General Purpose Amplifica- tion Commercial and Consumer Systems RF2878 3V Low Noise Amplifier/ 3V PA Driver Amplifier RF2878 PCBA-D Fully Assembled Evaluation Board (Driver) RF2878 PCBA-L Fully Assembled Evaluation Board (LNA) Rev A0 DS060206 RF28783V Low Noise Amplifier/ 3V PA Driver Amplifier RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage, VCC -0.5 to +8.0 V DC Power Down Voltage, VPD <VCC VDC Input RF Level +10 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall RF Frequency Range 150 to 2500 MHz Low Noise Amplifier 881MHz Performance Schematic per LNA Application; T=25°C, RF=881MHz, V PD=2.8V , R1=1k Ω Gain 19.5 20 dB V CC=3.0V, ICC=7 .6mA 19.5 20 dB V CC=2.7V, ICC=7 .5mA Noise Figure 1.4 1.6 dB V CC=3.0V, ICC=7 .6mA 1.4 1.6 dB V CC=2.7V, ICC=7 .5mA Input IP3 +6.0 dBm V CC=3.0V, ICC=7 .6mA +5.5 dBm V CC=2.7V, ICC=7 .5mA Low Noise Amplifier 1950MHz Performance Schematic per LNA Application; T=25°C, RF=1950MHz, V PD=2.8V , R1=1k Ω Gain 12.5 13 dB V CC=3.0V, ICC=6.4mA 12.5 13 dB V CC=2.7V, ICC=6.3mA Noise Figure 1.3 1.5 dB V CC=3.0V, ICC=6.4mA 1.3 1.5 dB V CC=2.7V, ICC=6.3mA Input IP3 +16.5 dBm V CC=3.0V, ICC=6.4mA +16.0 dBm V CC=2.7V, ICC=6.3mA Driver Amplifier 836MHz Performance Schematic per Driver Amplifier Application; T=25°C, RF=836MHz, V PD=2.8V Gain 19.5 20.5 21.5 dB V CC=3.5V 19.5 20.5 21.5 dB V CC=3.0V 19.5 20.5 21.5 dB V CC=2.7V Output IP3 25 +32.0 35 dBm V CC=3.5V +29.0 dBm V CC=3.0V +27.8 dBm V CC=2.7V Noise Figure 1.9 2.0 dB V CC=3.5V 1.85 2.0 dB V CC=3.0V 1.8 2.0 dB V CC=2.7V Reverse Isolation 25 dB V CC=3.5V 25 dB V CC=3.0V 25 dB V CC=2.7V Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. Driver Amplifier 836MHz Performance,, cont. Schematic per Driver Amplifier Application; T=25°C, RF=836MHz, V PD=2.8V Input VSWR 1.8:1 2.0:1 Output VSWR 1.25:1 2.0:1 Using External LC network used on evaluation board. P1dB 13 14.4 dBm V CC=3.5V 12 12.5 dBm V CC=3.0V 10.5 11.5 dBm V CC=2.7V Power Supply T=2 5 ° C Voltage (VCC) 2.5 to 6.0 V Voltage (VPD) 2.7 2.8 2.9 V Current Consumption - Driver Amplifier 12.5 21.5 27 mA V CC=3.5V; V PD=2.8V; V PD+VCC - Current Consumption from VPD is 2.0mA Typ. @ VPD=2.8V and 3.0mA Max @ V PD=2.9V 18 20 22 mA V CC=3.5V; V PD =2.7V; V PD+ VCC 19 23 29 mA V CC=3.5V; V PD =2.9V; V PD+ VCC Power Down 10 μAV CC=3.5V; V PD ≤ 0.9 V Driver Amplifier 1880MHz Performance Schematic per Driver Amplifier Application; T=25°C, RF=1880MHz, V PD=2.8V Gain 13.0 14.0 14.5 dB V CC=3.5V 13.0 14.0 14.5 dB V CC=3.0V 13.0 14.0 14.5 dB V CC=2.7V Output IP3 27 +35.0 38 dBm V CC=3.5V +31.0 dBm V CC=3.0V +28.8 dBm V CC=2.7V Noise Figure 1.85 2.0 dB V CC=3.5V 1.8 2.0 dB V CC=3.0V 1.75 2.0 dB V CC=2.7V Reverse Isolation 19 dB V CC=3.5V 19 dB V CC=3.0V 19 dB V CC=2.7V Input VSWR 1.6:1 2.0:1 Output VSWR 1.6:1 2.0:1 Using External LC network used on evaluation board. P1dB 14 15.6 dBm V CC=3.5V 13 14.1 dBm V CC=3.0V 12 13.1 dBm V CC=2.7V
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. Power Supply T=2 5 ° C Voltage (VCC) 2.5 to 6.0 V Voltage (VPD) 2.7 2.8 2.9 V Current Consumption - Driver Amplifier Consumption from VPD is 2.0mA Typ.@ VPD=2.8V and 3.0mA Max @ V PD=2.9V 16 18 20 mA V CC=3.5V; V PD =2.7V; V PD+ VCC 18 20.5 27 mA V CC=3.5V; V PD =2.9V; V PD+ VCC Power Down 10 μAV CC=3.5V; V PD ≤ 0.9 V
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing Pin Function Description Interface Schematic 1R F I N RF input pin. This pin is DC coupled and matched to 50 Ω at 836 MHz. 2G N D 1 Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 3V P D For low noise amplifier applications, this pin is used to control the bias cur- rent. See plots for bias current settings. An external resistor (R1) can be used to set the bias current for any V PD voltage. For driver amplifier applications, this is the Power Down pin for the IC. VPD=2.8V +/- 0.1V is required for proper operation. V PD<0 . 9V t u r n s o f f the Part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD=2.8V is 2.0mA typical and 3.0mA Max (@ VPD=2.9V). 4R F O U T Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typi- cally matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. 5G N D 2 Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF IN RF OUT To Bias Circuit PD 1.60 + 0.01 0.400 2.80 + 0.20 2.90 + 0.10 0.45 + 0.10 3° MAX 0° MIN 0.127 0.15 0.05 1.44 1.04 Dimensions in mm. 0.950
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic: Low Noise Amplifier ~881MHz Operation Application Schematic: Low Noise Amplifier ~1950MHz Operation 22 nF RF IN 100 pF10 nF 1k Ω VPD 12 nH 2 pF RF OUT 100 pF 10 nF VCC 22 nF RF IN 100 pF10 nF 1k Ω VPD 3.3 nH 1 pF RF OUT 100 pF 10 nF VCC
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic: Driver Amplifier ~836MHz Operation Application Schematic: Driver Amplifier ~1880MHz Operation 22 nF RF IN 100 pF10 nF 0 Ω VPD 12 nH 2 pF RF OUT 100 pF 10 nF VCC 22 nF RF IN 100 pF10 nF 0 Ω VPD 3.3 nH 1 pF RF OUT 100 pF 10 nF VCC
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Schematic: Low Noise Amplifier ~881MHz Operation 22 nF50 Ω μstripJ1 RF IN 220 pF 10 nF 0 Ω VPD 2 pF J2 RF OUT 12 nH 220 pF 10 nF VCC 50 Ω μstrip 2878401 r- P1-1 VPD GND P1-3 4.7 μF VCC
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Schematic: Driver Amplifier ~836MHz Operation 22 nFJ1 RF IN 220 pF 10 nF 0 Ω VPD 2 pF J2 RF OUT 12 nH 220 pF 10 nF VCC 50 Ω μstrip 50 Ω μstrip 2878400 r1 P1-1 VPD GND P1-3 4.7 μF VCC
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout - 900MHz Driver Board Size 0.948” x 1.063” Board Thickness 0.031”; Board Material FR-4 Evaluation Board Layout - 900MHz LNA
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.