RF2850 RFMD | Alldatasheet

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RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS VCC QSIG QREF GND VCC GND RFOUT GND VCC GND LO LOREF RFREFGND ISIG IREF 7 86 1516 -45° +45° Σ RF2850 DIRECT QUADRATURE MODULATOR

  • UMTS Base Stations
  • CDMA Base Stations
  • GSM-EDGE/EGSM Base Stations
  • WLAN and WLL Systems
  • GMSK,QPSK,DQPSK,QAM Modulation The RF2850 is a direct quadrature modulator for use in base stations and other communications systems. RF2850 supports PCS, GS M, EDGE, CDMA2000, and UMTS standards. This device features a narrow-band operation at 1700MHz to 2500MHz with excellent carrier and sideband suppression and ultra low noise floor. The device is manufactured on an advanced GaAs HBT pro- cess. The RF2850 operates from a single 5V supply and is packaged in a low cost 4mmx4mm 16-pin leadless package.
  • Typical Carrier Suppression>40dBc
  • Typical Sideband Suppression>40dBc
  • Noise Floor better than -158dBm/Hz
  • Single 5V Power Supply RF2850 Direct Quadrature Modulator RF2850 PCBA Fully Assembled Evaluation Board Rev A0 050616

0.10 CABM

0.35 0.23 Pin 1 ID 0.20 R 2.25 1.95 SQ. 0.65 0.75

0.50 TYP

0.60 0.24 TYP 0.05 C 0.90 0.85 0.70 0.65 0.05 0.00 12° MAX -C- SEATING PLANE Shaded lead is pin 1. Dimensions in mm.

0.10 C A

2 PLCS

-A- 4.00 SQ.

0.10 C B

-B- 3.75 SQ

1.87 TYP

2.00 TYP

Package Style: QFN, 16-Pin, 4x4 RoHS Compliant & Pb-Free Product

Supply Voltage -0.5 to +5.3 V LO Input +10 dBm Operating Temperature -40 to +85 °C Storage Temperature -65 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. High Band Performance (1900MHz) with CW Baseband Inputs LO Input Port LO Drive Level -5 dBm LO Input Impedance 50 Ω LO Port Return Loss 13 dB Modulation Input Frequency Range DC 250 MHz Reference Voltage 2.05 V Baseband common mode voltage Baseband Input Level 0.25 V P-P 0.25V P-P per pin, 500mV VP-P differential, I/Q in quadrature I/Q Signal 200 kHz CW baseband signal Input Impedance 40 k Ω Measured at DC Bandwidth (-1dB) 130 MHz 500mV V P-P differential, I/Q at 2.05V DC Input Bias Current 40 μA I/Q Modulator Output RF Frequency Range 1700 2500 MHz T=25°C, V CC=5V RF Output Power -6 dBm RF Output Return Loss 15 dB RF Output P1dB 4 5 dBm Carrier Suppression 20 25 dBc Unadjusted (see note) Carrier Suppression 35 55 dBc Adjusted. T=-40°C to +85°C Sideband Suppression 30 45 dBc Unadjusted IM3 Suppression 52 dBc Two tone baseband input @ 500mV P-P dif- ferential per tone Output IP3 15 20 dBm Broadband Noise Floor -158 -156 dBm/Hz 20MHz offset from LO, all IQ input at bias of 2.05V DC Parameters Supply Voltage 5.0 V Specification 4.75 5.25 V Operating limits Supply Current 60 mA Note: 20dBc limit for unadjusted carrier suppression is applicable for differential I and Q inputs only. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Parameter Specification Unit ConditionMin. Typ. Max. High Band Performance with PCS CDMA and W-CDMA Baseband Inputs W-CDMA 3GPP Channel Power -13 dBm 3.84MHz integrated bandwidth, ESG-D with LPF ACPR @ 1960MHz -68 -62 dBc SNR @ 1960MHz -74 -70 dBc ACPR @ 2140MHz -65 -62 dBc SNR @ 2140MHz -74 -70 dBc Noise Floor @ 20MHz Offset -156 -155 dBm/Hz 20MHz offset from LO PCS CDMA Channel Power -13 dBm 1.2288MHz integrated bandwidth ACPR @ 1960MHz -72 -70 dBc 30kHz integrated bandwidth W-CDMA 1MHz BW Channel Power -14 dBm 1MHz integrated bandwidth at adjacent channel ACPR @ 2140MHz -74 -71 dBc SNR @ 2140MHz -85 -82 dBc Noise Floor @ 20MHz Offset -157 -156 dBm/Hz 20MHz offset from LO

Pin Function Description Interface Schematic 1G N D Ground connection. 2L O LO input signal. This pin has an internal DC-blocking capacitor. This port is voltage-driven so matching at different frequencies is generally not required. 3L O R E F The reference end of local oscillator. 4G N D Ground connection. 5V C C Power supply. An external capacitor is required. 6I R E F Reference voltage for the I mixer. The DC voltage should be the same as the DC supplied to I SIG (pin 7). See pin 7 for more information. The SIG and REF inputs are inputs of a differential amplifier. Therefore, the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a differential mode which will increase gain. 7I S I G Baseband input to the I mixer. This pin is DC-coupled. The input drive level determines output power and linearity performance. For better carrier/sideband suppression and dynamic range, the drive level should be as high as possible to meet the required linearity perfor- mance. The recommended DC level for this pin is 2.05V. 8G N D Ground connection. 9R F R E F The reference end of RF input. 10 VCC Power supply. An external capacitor is required. 11 GND Ground connection. 12 RF OUT RF Output. This pin has an internal DC-blocking capacitor. At some fre- quencies, external matching may be needed to optimize output power.13 GND Ground connection. 14 Q SIG Baseband input to the Q mixer. This pin is DC-coupled. The input drive level determines the output power and linearity performance. For better carrier/sideband suppression and dynamic range, the drive level should be as high as possible to meet the required linearity perfor- mance. The recommended DC level for this pin is 2.05V. 15 Q REF Reference voltage for the Q mixer. See pin 14 for more information. 16 VCC Power supply. An external capacitor is required. Pkg Base GND Ground connection. LO 2 pF VCC 2 pF VCC RF OUT 2 pF VCC 2 pF VCC

Evaluation Board Schematic 1700MHz to 2500MHz (Differential Drive) VIN VCC VCC2 VCC1 100 pF C10 100 pF C14 0.5 pF -45° +45° 7 86 1516 Σ QREF 50 Ω μstrip J4 QSIG 50 Ω μstrip IREF 50 Ω μstrip J5 ISIG 50 Ω μstrip 1 nH 1 nH 50 Ω μstrip LO C12 3.9 pF C13 3.9 pFX1

2.1 GHz X2

2.1 GHz

50 Ω μstrip J6 RF OUT VCC1 100 nH VCC2 100 nH 100 pF 2.2 pF

Board Size 2.00” x 2.00” Board Thickness 0.042” (±10%), Board Material FR-4