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Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker forma- tion and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retar- dants. (+1) 336-678-5570 sales-support@rfmd.com VC1 VBIAS RFIN VPC2 RFOUT/ VC2 Active Bias High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP On-Chip Active Bias Control High Gain: 24dB Typ. at 1960MHz Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package
Applications
WCDMA Systems PCS Systems Multi-Carrier Applications DS121024 Package: Exposed Pad SOIC-8 SPA2318ZLow Noise, High Gain SiGe HBT Parameter Specification Unit ConditionMin. Typ. Max. Frequency of Operation 1700 2200 MHz Output Power at 1dB Compression [1] 29.5 dBm 1960MHz 29.5 dBm 2140MHz Adjacent Channel Power [1] -55.0 dBc 1960MHz, IS-95 at P OUT=2 1.0dBm, WCDMA at POUT=20.7dBm -50.0 -47.0 dBc 2140MHz Small Signal Gain [1,2] 24.0 dB 1960MHz 21.0 23.5 24.5 dB 2140MHz Input VSWR [1,2] 1.6:1 1960MHz 1.6:1 2140MHz Output Third Order Intercept Point [2] 46.5 dBm 1960MHz, Power out per tone=+14dBm 47.0 dBm 2140 MHz Noise Figure [1,2] 5.5 dB 1960MHz 5.5 dB 2140MHz Device Current [1,2] 360 400 425 mA I BIAS=10mA, I C1=70mA, I C2=320mA Device Voltage [1,2] 4.75 5.0 5.25 V Thermal Resistance (Junction - Lead) 31 °C/W T L=85°C Test Conditions: Z0=50 Temp=25°C VCC=5.0V [1] Optimal ACP tune [2] Optimal IP 3 tune
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z ACP Optimized 1960MHz Application Circuit Data, ICC=400mA, V CC=5V IS-95, 9 Channels Forward Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (IC1) at VCC typ. 150 mA Max Supply Current (IC2) at VCC typ. 750 mA Max Device Voltage (VCC) at ICC typ. 6.0 V Max RF Input Power 16 dBm Max Junction Temp (TJ)+ 1 6 0 ° C Max Storage Temp +150 °C Moisture Sensitivity Level 3 MSL Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. -75 -70 -65 -60 -55 -50 -45 -40 16 18 20 22 24 25C -40C 85C
1960 MHz Adjacent Channel Power
vs. Channel Output Power dBc dBm IS-95 CDMA at 1960 MHz 23.75 24 dBm 21 dBm 17 dBm 13 dBm T=25oC
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z ACP Optimized 1960MHz Application Circuit Data, ICC=400mA, V CC=5V ACP Optimized 1960MHz Application Circuit Data, ICC=400mA, V CC=5V 25C 85C -40C 25C 85C -40C P1dB vs Frequency GHz dBm Gain vs. Frequency GHz dB -40 -35 -30 -25 -20 -15 -10 S11 S12 S22 100 200 300 400 500 600 0123456 25C -40C 85C Input/Output Return Loss, Isolation vs Frequency, T=25 °°°°°C dB GHz Device Current vs. Source Voltage Vcc (V) Device Current (mA)
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z 1930MHz to 1990MHz Application Schematic 1930MHz to 1990MHz Evaluation Boar d Layout and Bill of Materials ACP Optimized 2140MHz Application Circuit Data, ICC=400mA, V CC=5V IS-95, WCDMA setup is Vcc 2.2pF 20 nH 8.2pF 10uF Tantalum 20pF 1.5pF(IP3) 2.2pF(ACP) 1.2nH 1000pF 68pF 18nH 6.8K 300 Ohm 1200pF Z=63 :, 7.3° Z=50 :, 13.2° Tune for optimal ACP performance 1.0pF Ic2 Ic1 Ibias Vpc External Connection Vpc Eval Board ECB-101161 Rev. C SOIC-8 PA Vcc Short L1 C6 R2 Tune for optimal ACP performance Sirenza Microdevices Ref. Des. Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF, ±0.25pF (ACP) Rohm MCH18 series C2 1200pF, 5% Rohm MCH18 series C3 1.0pF, ±0.25pF Rohm MCH18 series C4 68pF, 5% Rohm MCH18 series C5 10uF , 10% AVX T AJB106K020R C6 1000pF, 5% Rohm MCH18 series C7 8.2pF, ±0.5pF Rohm MCH18 series C8 2.2pF, ±0.25pF Rohm MCH18 series C9 20pF, 5% Rohm MCH18 series L1 1.2nH, ±0.3nH T oko LL1608-FS series L2 18nH, 5% T oko LL1608-FS series L3 20nH, 5% Coilcraft HQ 0805 series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z PCCPCH+PSCH+SSCH+CPICH+PICH+64DPCH, 10.5dB peak to average at 0.001% probability ACP Optimized at 2140MHz Application Circuit Data, ICC=400mA, V CC=5V -70 -65 -60 -55 -50 -45 -40 16 17 18 19 20 21 22 25C -40C 85C dBm dBc W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power W-CDMA at 2.14 GHz 21.6 T=25oC 25C 85C -40C 25C 85C -40C GHz Gain vs. FrequencyP1dB vs Frequency GHz dBm dB -40 -35 -30 -25 -20 -15 -10 S11 S12 S22 100 200 300 400 500 600 0123456 25C -40C 85C Device Current vs. Source Voltage Vcc (V) Device Current (mA) Input/Output Return Loss, Isolation vs Frequency, T=25 °°°°°C dB GHz
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z 2110MHz to 2170MHz Application Schematic 2110MHz to 2170MHz Evaluation Board Layout and Bill of Materials Vcc 1.8pF 18 nH 5.6pF 10uF Tantalum 39pF 1.5pF (IP3) 2.2pF (ACP) 2.7nH 1000pF 56pF 5.6nH 6.8K : 300 :1800pF 0.1uF Tantalum Z=63 :, 21.7° Z=50 :, 11.6° Tune for optimal ACP performance Ic2 Ic1 Ibias Vpc External Connection Vpc Eval Board ECB-101161 Rev. C SOIC-8 PA Vcc Short R2 Tune for optimal ACP performance Note: All inductors are Toko LL1608-FS unless noted otherwise Sirenza Microdevices Ref. Des. Value Part Number C1 1.5pF, ±0.25pF (IP3) 2.2pF , ±0.25pF (ACP) Rohm MCH18 series C2 56pF , 5% Rohm MCH18 series C3 10uF , 10% AVX T AJB106K020R C4 1000pF, 5% Rohm MCH18 series C5 5.6pF, ±0.5pF Rohm MCH18 series C6 1.8pF , ±0.25pF Rohm MCH18 series C7 1800pF, 5% Rohm MCH18 series C8 0.1uF, 10% Matsuo 267M3502104K C9 39pF , 5% Rohm MCH18 series L1 2.7nH, ±0.3nH T oko LL1608-FS series L2 5.6nH, ±0.3nH T oko LL1608-FS series L3 18nH, 5% T oko LL1608-FS series R1 6.8K Ohm, 5% Rohm MCR03 series R2 300 Ohm, 5% Rohm MCR03 series
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z Simplified Device Schematic Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Pin Function Description 1V C 1 VC1 is the supply voltage for the first stage transistor. The configuration as shown on the Application Schematic is required for optimum RF performance. 2V B I A S VBias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Sche- matic. 3R F I N RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. 4V P C 2 VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. 5, 6, 7, 8 RF OUT / VC2 RF output and bias pins. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see Application Schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. EPAD GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. 5-8 ACTIVE BIAS NETWORK ACTIVE BIAS NETWORK Simplified Device Schematic A Parame Max. Su Max. Su Max. De Max. RF
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SPA2318Z Branding Diagram Recommended Land Pattern
Ordering Information
SPA2318Z 7” Reel with 500 pieces SPA2318ZSQ Sample bag with 25 pieces SPA2318ZSR 7” Reel with 100 pieces SPA2318Z-EVB1 1960MHz PCBA SPA2318Z-EVB2 2140MHz PCBA (+1) 336-678-5570 sales-support@rfmd.com 0.020 [0.51] 0.140 [3.56] 0.080 [2.03] 0.050 [1.27] 0.150 [3.81] 0.300 [7.62] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) Machine Screws