SPA-1426Z

SPA-1426Z RFMD | Alldatasheet

Document overview

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Technical content

Features

Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power de tector, on/off power control, ESD protec- tion, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. ACP versus Channel Power, 2140MHz, W-CDMA -75.0 -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C „ P1dB=29.5dBm @ 2140MHz „ ACP = -65dBc with 17.0dBm Channel Power @ 2140MHz „ Low Thermal Resistance Package „ Power Up/Down Control<1μs „ Robust Class 1C ESD

Applications

„ Macro/Micro-Cell Driver Stage „ Pico-Cell Output Stage „ GSM, CDMA, TDSCDMA, WCDMA, IS-95 „ Single and Multi-Carrier Appli- cations EDS-105883 Rev B Preliminary RoHS Compliant and Pb-Free Product Package: SOF-26 SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 16.5 dB 885MHz 14.0 dB 1960MHz 14.0 dB 2140MHz Output Power at 1dB Compression 29.5 dBm 885MHz 28.5 dBm 1960MHz 29.5 dBm 2140MHz Output Third Order Intercept Point, 18dBm per tone, 1MHz spacing 43.0 dBm 885MHz 47.0 dBm 1960MHz 46.5 dBm 2140MHz W-CDMA Channel Power 3GPP 3.5, test model 1, 64 DPCH -65dBc ACP 14.2 dBm 885MHz -55dBc ACP 18.4 dBm 885MHz -65dBc ACP 16.5 dBm 1960MHz -55dBc ACP 18.5 dBm 1960MHz -65dBc ACP 17.0 dBm 2140MHz -55dBc ACP 19.0 dBm 2140MHz Input Return Loss 15.0 18.0 dB 1960MHz Output Return Loss 8.0 10.5 dB 1960MHz Noise Figure 5.4 dB 1960MHz Operating Current (V CC=5V), Quiescent 325.0 mA Operating Voltage 5.0 5.5 V Power Up Control Current (VPC=5V) 2. 1 mA VCC Leakage Current (VCC=5V , VPC=0V) 1 00.0 μA Thermal Resistance (junction to lead) 21 °C/W Test Conditions: VCC=5V I CQ=325mA Typ. TL=25°C ZS=ZL=50Ω

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Simplified Device Schematic Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lCE) 750 mA Max Device Voltage (VCC)* 6 V Power Dissipation 3 W Max CW Input Power, 50Ω Output Load 29 dBm Max CW Input Power, 10:1 VSWR Out- put Load 18 dBm Max Modulated (W-CDMA) Input Power, 50Ω Output Load 22 dBm Max Modulated (W-CDMA) Input Power, 10:1 VSWR Output Load 15 dBm Max RF Output Power with 50Ω Out- put Load (Continuous long term operation) 27 dBm Max Junction Temperature (TJ) +150 °C Operating Temperature Range (T L) -40 to +85 °C Maximum Storage Temperature +150 °C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 1 *Note: No RF Drive **Note: W-CDMA, 64DPCH Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l and TL=TLEAD Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. 3 4 GND GND VDET RF OUT / VCC NCVBias RF IN VPC Bias

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 850MHz to 910MHz Application Circuit ACP versus Channel Power Out 880MHz, W-CDMA, 5V -80 -75 -70 -65 -60 -55 -50 -45 -40 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB ACP versus Channel Power Out 880MHz, IS-95, 5V -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 22 24 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C Source Source ACPR IS-95A 9CH Fwd, Peak/Avg=9.1dB ACP versus Channel Power Out W-CDMA, 5V, 25°C -80 -75 -70 -65 -60 -55 -50 -45 -40 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) 850Mhz 880Mhz 910MHz Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB ACP versus Channel Power Out IS-95, 5V, 25°C -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 22 24 Channel Power Out (dBm) (dBc) 850Mhz 880Mhz 910MHz Source Source ACPR IS-95A 9CH Fwd, Peak/Avg=9.1dB P1dB versus Frequency Frequency (GHz) (dBm) -40°C 25°C 85°C OIP3 versus Frequency 18dBm/Tone Frequency(GHz) (dBm) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 850MHz to 910MHz Application Circuit S11 versus Frequency -30 -25 -20 -15 -10 700 750 800 850 900 950 1000 Frequency (MHz) S11 (dB) -40°C 25°C 85°C S21 versus Frequency 700 750 800 850 900 950 1000 Frequency (MHz) S21 (dB) -40°C 25°C 85°C S12 versus Frequency -40 -35 -30 -25 -20 -15 -10 700 750 800 850 900 950 1000 Frequency (MHz) S12 (dB) -40°C 25°C 85°C S22 versus Frequency -30 -25 -20 -15 -10 700 750 800 850 900 950 1000 Frequency (MHz) S22 (dB) -40°C 25°C 85°C Noise Figure versus Frequency 850 860 870 880 890 900 910 Frequency (MHz) NF (dB) V-Detect versus Output Power at 880MHz 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 6 9 12 15 18 21 24 27 30 33 Power Out (dBm) V Detect (V) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 1930MHz to 1960MHz Application Circuit ACP versus Channel Power Out 1960MHz, W-CDMA, 5V -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB ACP versus Channel Power Out 1960MHz, IS-95, 5V -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 22 24 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C Source Source ACPR IS-95A 9CH Fwd, Peak/Avg=9.1dB ACP versus Channel Power Out W-CDMA, 5V, 25°C -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) 1930Mhz 1960Mhz 1990MHz Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB ACP versus Channel Power Out IS-95, 5V, 25°C -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 22 24 Channel Power Out (dBm) (dBc) 1.93Ghz 1.96Ghz 1.99GHz Source Source ACPR IS-95A 9CH Fwd, Peak/Avg=9.1dB P1dB versus Frequency Frequency (GHz) P1dB (dBm) -40°C 25°C 85°C OIP3 versus Frequency Frequency (GHz) OIP3 (dBm) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 1930MHz to 1960MHz Application Circuit S11 versus Frequency -30 -25 -20 -15 -10 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) (dB) -40°C 25°C 85°C S21 versus Frequency 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) (dB) -40°C 25°C 85°C S12 versus Frequency -50 -45 -40 -35 -30 -25 -20 -15 -10 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) (dB) -40°C 25°C 85°C S22 versus Frequency -30 -25 -20 -15 -10 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) (dB) -40°C 25°C 85°C Noise Figure at 25°C 1930 1940 1950 1960 1970 1980 1990 (MHz) (dB) V-Detect versus Output Power at 1960MHz 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 6 9 12 15 18 21 24 27 30 33 Power Out (dBm) V-Detect (V) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 2110MHz to 2170 MHz Application Circuit ACP versus Channel Power Out 2140MHz, W-CDMA, 5V -80 -75 -70 -65 -60 -55 -50 -45 -40 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) -40°C 25°C 85°C Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB ACP versus Channel Power Out W-CDMA, 5V, 25°C -80 -75 -70 -65 -60 -55 -50 -45 -40 8 1 01 21 41 61 82 02 2 Channel Power Out (dBm) (dBc) 2110MHz 2140MHz 2170MHz Source Source ACPR 3GPP 3.5, 64 DPCH, Peak/Avg=11dB P1dB versus Frequency Frequency (GHz) P1dB (dBm) -40°C 25°C 85°C OIP3 versus Frequency Frequency (GHz) OIP3 (dBm) -40°C 25°C 85°C Noise Figure at 25°C 4.0 4.5 5.0 5.5 6.0 6.5 7.0 2110 2120 2130 2140 2150 2160 2170 (MHz) (dB) V-Detect versus Output Power at 2140MHz 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 6 9 12 15 18 21 24 27 30 33 Power Out (dBm) V-Detect (V) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Typical RF Performance 2110MHz to 2170 MHz Application Circuit S11 versus Frequency -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) (dB) -40°C 25°C 85°C S21 versus Frequency 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) (dB) -40°C 25°C 85°C S12 versus Frequency -40 -35 -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) (dB) -40°C 25°C 85°C S22 versus Frequency -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) (dB) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout and Bill of Materials 850MHz to 910MHz Application Circuit (VCC and VPC=5.0V) ++++ 125871 SOF-26 OutputInput VdetVpc L3L3 Bill of Materials Q1 SPA-1426Z R1 887ohm 1% R2 4.02K ohm 1% R3 47k ohm C1 TAJA105K020R 1.0uF C2 MCH185CN104KK 0.1uF C3 MCH185A680DK 68pF C4 MCH185A680DK 68pF C5 MCH185A680JK 68pF C6 MCH185A8R2JK 8.2pF C7 MCH185A5R6JK 5.6pF C8 MCH185A221JK 220pf L1 0805HQ-48NX_BC 48nH Coil Craft L2 LL1608FS-3n3S 3.3nH Toko L3 LL1608FS-3N9S 3.9nH Toko PCB 125871 Q

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout and Bill of Materials 1930MHz to 1990MHz Application Circuit (V CC and VPC=5.0V) ++++ 125871 SOF-26 OutputInput VdetVpc Bill of Materials Q1 SPA-1426Z R1 887ohm 1% R2 4.02K ohm 1% R3 47k ohm C1 TAJA105K020R 1.0uF C2 MCH185CN104KK 0.1uF C3 MCH185A100DK 10pF C4 06035J3R0GBT 3.0pF AVX C5 MCH185A101JK 100pF C6 06035J2R4BBT 2.4pF AVX C8 MCH185A101JK 100pf C7 MCH185CN331JK 330pF L1 0805HQ-20NX_BC 20nH Coil Craft PCB 125871 Q

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout and Bill of Materials 2110MHz to 2170MHz Application Circuit (VCC and VPC=5.0V) C5 C6 ++++ 125871 SOF-26 OutputInput VdetVpc Bill of Materials Q1 SPA-1426Z R1 887ohm 1% R2 4.02K ohm 1% R3 47k ohm C1 TAJA105K020R 1.0uF C2 MCH185CN104KK 0.1uF C3 06035J8R2GBT 8.2pF AVX C4 06035J220GBT 22pF AVX C5 MCH185A101JK 100pF C6 06035J3R0BBT 3.0pF AVX C7 06035J2R4BBT 2.4pF AVX L1 0805HQ-20NX_BC 20nH Coil Craft PCB 125871 Q

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Suggested Pad Layout Dimensions in mm (inches) Pin Function Description 1V B I A S This is the supply voltage for the active bias circuit. 2R F I N This is the RF input pin and has a DC voltage present. An external DC block is required. 3V P C Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 1 by more than 0.5V unless the supply current from pin 3 is limited <10mA. 4V D E T This is the output port for the power detector. It samples the power at the input of the amplifier. 5R F O U T / V C C This is the RF output pin and DC connection to the collector. 6N C Not connected GND GND These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for hand soldering and rework. Many thermal and electrical GND vias are required as shown in the rec- ommended land pattern. 1.65 [0.065] 3.07 [0.121] 4.54 [0.179] 0.46 [0.018] 4.57 [0.180] 0.43 [0.017]

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing Dimensions in mm (inches) Refer to drawing posted at www.rfmd.com for tolerances.

Ordering Information

Part Number Description Reel Size Devices/Reel SPA-1426Z Lead Free, RoHS Compliant 7” 1000 SPA-1426Z-EVB1 850MHz to 910MHz Evaluation Board N/A N/A SPA-1426Z-EVB2 1930MHz to 1960MHz Evaluation Board N/A N/A SPA-1426Z-EVB3 2110MHz to 2170MHz Evaluation Board N/A N/A

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.