IPP80N06S3L-08 INFINEON | Alldatasheet

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Technical content

Features

  • N-channel - Logic Level - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested
  • ESD Class 2 (HBM) EIA/JESD22-A114-B Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current1) I D T C=25 °C, V GS=10 V 80 A T C=100 °C, V GS=10 V2) 61 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse3) E AS I D=40 A 170 mJ Drain gate voltage2) V DG 55 V Gate source voltage4) V GS ±16 V Power dissipation P tot T C=25 °C 105 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 55 V R DS(on),max (SMD version) 7.6 mΩ I D 80 A Product Summary PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Type Package Ordering Code Marking IPB80N06S3L-08 PG-TO263-3-2 SP0000-88128 3N06L08 IPI80N06S3L-08 PG-TO262-3-1 SP0000-88131 3N06L08 IPP80N06S3L-08 PG-TO220-3-1 SP0000-88127 3N06L08 Rev. 1.0 page 1 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.4 K/W Thermal resistance, junction - ambient, leaded R thJA -- 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=55 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=29 A - 11.5 14.2 mΩ V GS=5 V, I D=29 A, SMD version - 11.2 13.9 V GS=10 V, I D=43 A - 6.5 7.9 V GS=10 V, I D=43 A, SMD version - 6.2 7.6 Values Rev. 1.0 page 2 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 6475 - pF Output capacitance C oss - 812 - Reverse transfer capacitance Crss - 775 - Turn-on delay time t d(on) -1 6- n s Rise time t r -3 5- Turn-off delay time t d(off) -3 9- Fall time t f -2 5- Gate Charge Characteristics2) Gate to source charge Q gs -3 4- n C Gate to drain charge Q gd -1 6- Gate charge total Q g - 89 134 Gate plateau voltage V plateau - 4.9 - V Reverse Diode Diode continous forward current2) I S - - 80 A Diode pulse current2) I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs -4 5- n s Reverse recovery charge2) Q rr -5 3- n C 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +16V. T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 Ω V DD=11 V, I D=80 A, V GS=0 to 10 V Rev. 1.0 page 3 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 4 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-610-7 101 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 120 0 50 100 150 200 T C [°C] P tot [W] 100 0 50 100 150 200 T C [°C] I D [A] Rev. 1.0 page 4 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4 V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 5 V 6 V 8 V 10 V 0 50 100 150 I D [A] R DS(on) [mΩ ] -55 °C 25 °C 175 °C 100 120 140 160 0123456 V GS [V] I D [A] 3 V 3.5 V 4 V 4.5 V 5 V 10 V 100 120 140 160 0123456 V DS [V] I D [A] Rev. 1.0 page 5 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: Tj(start) 25°C 100°C 150°C 100 1 10 100 1000 t AV [µs] I AV [A] 25 °C175 °C 103 102 101 100 V SD [V] I F [A] Ciss Coss Crss 104 103 0 5 10 15 20 25 30 V DS [V] C [pF] 55µA 550µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Rev. 1.0 page 6 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08

13 Typical avalanche Energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V]

11 V 44 V

Q gate [nC] V GS [V] 40 A 30 A 20 A 100 150 200 250 300 350 400 0 50 100 150 200 T j [°C] E AS [mJ] VGS Qgate Q gs Qgd Qg VGS Qgate Q gs Qgd Qg Rev. 1.0 page 7 2005-09-16

IPI80N06S3L-08, IPP80N06S3L-08 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-09-16