SMJR-N-2-16

SMJR-N-2-XX SEOUL | Alldatasheet

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Description Features and Benefits www.seoulsemicon.comRev2.1, Sep 28, 2017 16W & 24W 230V LED Driver SMJR-N-2-XX NANO DRIVER The Seoul Semiconductor NANODRIVER range of Phase cut drivers are ideal for downlight, spot and track light as well as wall sconce and flush- mount fixtures. Based incredibly small package is ideal for very small custom driver design or for creating AC LED Modules. The NANODRIVER has very low ripple current enabling easy California Title 24 flicker compliance. RoHS

• Very small size 0.53” x 0.53” x 0.05”
• Low flicker for Title 24 compliance
• AC Phase cut dimming or analog dimming
• Over temperature protection
• Ultra Low Inrush current
• >0.9 Power Factor
• 5V 20mA Auxiliary Bias Supply Product Selection Part No. Vin [Vac] P [W] Remark Min. Max. SMJR-N-2-16 230 10 16 1100-1800 Lumens Typ SMJR-N-2-24 230 18 24 2000-2700 Lumens Typ Typical Circuit diagram

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017

Contents

Electrical Characteristic 8 Power Dissipation 10 Thermal 11 Typical Application Schematic 12 Component Selection 14 Analog Dimming 18 Phase Cut Dimmer Compatibility 20 Mechanical 21 Circuit Layout 22 Reflow Soldering Profile 23 Marking 24 Emitter Tape & Reel Packaging 25 Packaging 26 Precautions 28

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Performance Characteristics Absolute Maximum Ratings, Ta = 25ºC Parameter Symbol Unit Lower Limit Upper Limit L,N, LED1, LED2, BLDP, BLDN to GND - V -0.3 450 ADIM, RSET, VAUX, VPS, ISN, RSET,RS1, RS2 to GND - V -0.3 6.5 Continuous Power Dissipation Operating Case Temperature Tc ºC -40 120 Operating Ambient Temperature Ta ºC -40 70 Storage Ambient Temperature Tstg ºC -40 120 Maximum Junction Temperature Tj ºC - 150 ESD (HBM) 1) - kV - 1.5 Notes : Stress beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the following operational sections of the specifications is not implied. Exposure to absolute maximum rating condition(s) for extended periods may affect device reliability. 1) Human Body Model (HBM) per JESD22-A114 for all pins. 2) Power dissipation is dependent on exact circuit configuration, including input voltage, output power, auxiliary power consumption etc. Expected Power dissipation is provided in detailed power dissipation curves below.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Block Diagram SMJR-N-2-16 Upto 16W with internal bleeder. Pin Name Description

1 L AC Input Live

2 N AC Input Neutral

3 ADIM Analog Dimming (0.45V ~ 3V)

4 ISN Ground

5 VAUX Auxiliary Power Supply Output(5V 20mA)

6 GND Voltage Ouput (-)

7 RS1 L1 Current Setting

8 RSET Total Current Setting

9 CN Capacitor (-)

10 CP Capacitor (+)

11 LED3 LED (-)

12 LED2 LED middle

13 LED1 LED (+)

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Block Diagram Pin Name Description

3 BLDP Bleed Resistor

4 BLDM Bleed Resistor

5 ADIM Analog Dimming (0.45V ~ 3V)

6 ISN Ground

7 VAUX Auxiliary Power Supply Output(5V 20mA)

8 GND Voltage Ouput (-)

9 RS1 L1 Current Setting

10 RSET Total Current Setting

11 RS2 L1 Current Setting

12 CN Capacitor (-)

13 CP Capacitor (+)

14 LED3 LED (-)

15 LED2 LED middle

16 LED1 LED (+)

SMJR-N-2-24 16-24W with external bleeder resistor.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Device Functional Description The NANODRIVER includes a bleeding functions which enables operation with multiple dimmers. In Analog Dimming Mode, bleeding functions are disabled, and bleeding functions are enabled in TRIAC dimmer mode only. The main functions provide the dimmers with sufficient current to maintain the minimum holding current for various Triacs and to simulate filament turn on current for some active smart dimmers in common use. A list of tested dimmers is provided below. Bleeding Function The NANODRIVER includes a thermal shutdown function. This protection protects the NANODRIVER from overheating caused by excessive power dissipation. An internal temperature sensor continuously monitors the junction temperature. If junction temperature exceeds about 160°C, the LED current will be reduced to the half of the total current. Thermal Protection When the RSET voltage exceeds RSET open detection voltage VRSETP(typ. 2V), all LED drivers are disabled. And all LED drivers will resume operation when the RSET voltage falls below VRSETN (typ. 1.5V). There is a typical 0.5V hysteresis for reliable operation. RSET Open Protection The NANODRIVER has the VAUX short circuit protection. When the VAUX voltage falls below the VCC Foldback ON voltage VFBON (typ. 0.5V), the LED current is reduced abruptly and VAUX current is limited by 4mA. If the abnormal condition is removed and the VCC voltage rises above VAUX Foldback OFF voltage VFBOFF (Typ. 1.0V), the LED current and VCC current is re-established. There is a typical 0.5V hysteresis for reliable operation. VAUX Short Protection Topology and Fundamental Operation The NANODRIVER uses a patented Seoul Semiconductor AC Topology using low frequency current steering without the use of magnetic components. During the peaks of the sinewave energy is stored in an electrolytic capacitor. The stored energy is used to power the LEDs during the trough between the peaks to provide an equivalent dc flux to provide very lower measured ripple. The NANODRIVER supports both leading Edge and Trailing edge dimmer compatibility or can be configured for analog dimming such as 0-10V dimming.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Specification Specification, Ta = 25ºC AC Input Voltage AC 230V Model SMJR-N-2-16 SMJR-N-2-24 MAXIMUM RATED AVERAGE CURRENT 85mA 127mA OPERATING VOLTAGE LED String 1 =88V LED String 2 =106V CURRENT ACCURACY ±5% FLICKER Less Than 10% STARTUP TIME <300ms FREQUENCY RANGE 50~60Hz POWER FACTOR(Typ.) PF > 0.9 INRUSH CURRENT(max.) <30mA LINE REGULATION ±10% at AC ±10%

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Performance Characteristics Electrical Characteristics, VVP = 50V, Ta = 25ºC Parameter Symbol Condition Value Unit Min. Typ. Max. GENERAL Operating Range VS_VP 15 400 V VDD Turn On Threshold Voltage1) VVDD_ON VVCC rising 3.0 3.6 4.4 V VDD Hysteresis Voltage1) VVDD_HYS VVDD_OFF =VVDD_ON- VVDD_HYS - 0.4 - V VP Operating Current IOPR VP=50V - 900 1300 uA VAUX Auxiliary Output VVCC ILOAD=0mA 5.2 6.0 6.2 V VVCC2 ILOAD=10mA 5.4 V VVCC3 ILOAD=20mA 5.0 V RSET Current IRSET At normal condition 148 155 162 uA RSET Current at Maximum Scaling IRSCL At maximum scaling 5 15 30 uA PROTECTIONS Thermal Shutdown Temperature2) TSD Temperature latch off Recycle power to recover 160 °C RSET Open Detection Positive Voltage VRSETP VRSET rising 1.7 2.0 2.3 V RSET Open Detection Hysteresis Voltage VRSET_HYS VRSETN=VRSETP- VRSET_HYS - 0.5 - V VAUX Foldback On Voltage VFBON VVCC falling 0.2 0.5 0.7 V VAUX Foldback Hysteresis Voltage VFB_HYS VFBOFF=VFBON+VFB_HYS - 0.5 - V VAUX Foldback Current IFB 3 4 5.5 mA

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Performance Characteristics Electrical Characteristics, VVP = 50V, Ta = 25ºC Parameter Symbol Condition Value Unit Min. Typ. Max. ANALOG DIMMING CONTROLLER ADIM Off Voltage VADIM_OFF RSET=2kΩ, ADIM falling 310 400 470 mV ADIM Off Hysteresis Voltage VADIM_HYS ADIM_ON =VADIM_OFF+VADIM_HYS - 050 - mV ADIM Clamp Voltage Range VADIM_CL ADIM sweep - 3.0 - V BLEEDING CURRENT DRIVER Week Bleeding Current IBLD_ WK 60 73 80 mA Startup Bleeding Current IBLD_ SS Bleeding current at startup 30 32 40 mA Maximum Bleeding Current IBLD_ MAX 40 45 50 mA SCALING Scaling Start Angle2) DSTART - 120 - Deg. Scaling End Angle2) DEND - 90 - Deg. Notes : VVP = 50V, TA = -40°C ~ 85°C*). Typical values are at TA = 25°C, unless otherwise specified. *) Specifications over the TA range are assured by design, characterized and correlated with process control. 1) The VDD is internal power supply for internal block. 2) Guaranteed by design, characterization and correlation with process controls. Not fully tested in production.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Characteristics Graph Product Data Sheet IC Power Dissipation

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Thermal Resistance Parameter Symbol Value Unit Thermal Resistance Junction to Ambient1), 2), 3) ӨJA 28.9 °C/W Thermal Resistance Junction to Case, Top1), 2), 4) ӨJc 14.8 °C/W 1) TA= 25 °C 2) Measured in still air-free convection condition (conforms to EIA/JESD51-2) on high effective thermal conductivity JESD51-7 test board. 3) ӨJA = (TJ ,max -TA) / PD,max where, TJ,max, TA, ΘJA and PD,max are maximum junction temperature, ambient temperature, junction- to-ambient thermal resistance and maximum power dissipation respectively. This conforms to JESD51-12. 4) ӨJCx = (TJ – Tc ) / P where, TJ, TC, ΘJCx and P are junction temperature, case temperature, junction-to-case thermal resistance and the part of the chip power that flows from junction to the “x” case surface respectively. And the “x” indicates the case surface where TC is measured and through which the heat is forced to flow during the ΘJCx measurement, “TOP” for the top surface or “BOT” for the bottom surface. This conforms to JESD51-12. Thermal Resistance Notes :

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit Upto16W 0-10V Dimming 1) C2 and R2 are optional. It required for obtaining the highest triac dimming. Notes : Upto 16W Phase Cut Dimming 1) The NANODRIVER is a non-isolated topology and the 0-10V signal needs to be isolated. VAUX is a bias suppl y that may be used to assist in isolating the source. Notes :

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit 16-24W Phase Cut Dimming 16-24W 0-10V Dimming 1) C2 and R2 are optional. It required for obtaining the highest triac dimming. Notes : 1) The NANODRIVER is a non-isolated topology and the 0-10V signal needs to be isolated. VAUX is a bias suppl y that may be used to assist in isolating the source. Notes :

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit Power [W] Io [mA] C1 R1 RS1 RS2 RSET 10 48 350V 10uF 2 parallel 47Ω, 1W (5%) 4.3Ω, 0.25W (1%) 12 58 350V 10uF 2 parallel 33Ω, 1W (5%) 4.3Ω, 0.25W (1%) 14 68 350V 10uF 2 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 16 77 350V 10uF 2 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 18 87 350V 10uF 3 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 4.3Ω, 0.25W (1%) 1.16kΩ, 0.25W (1%) 20 97 350V 10uF 3 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 4.3Ω, 0.25W (1%) 1.30kΩ, 0.25W (1%) 22 106 350V 10uF 3 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 4.3Ω, 0.25W (1%) 1.41kΩ, 0.25W (1%) 24 116 350V 10uF 3 parallel 10Ω, 1W (5%) 4.3Ω, 0.25W (1%) 4.3Ω, 0.25W (1%) 1.55kΩ, 0.25W (1%) Component Selection - Typical Values LEDs Selection and Configuration The NANODRIVER output is actually a high voltage waveform in 2 strings. The wave form is using Seoul Semiconductor patented AC waveform with a net light flux that has very low measurable Flicker. For 230Vac input the device is optimized with a String 1 88V and String 2 106V. The converter current is actually divided between the 2 strings with String 1 current measuring approximately 115% of the converter running current and String 2 75% of the converter running current. The NANODRIVER can be used with any LED however the best performance and cost optimization is using Seoul Semiconductor MJT LEDs. For the lowest cost solution the recommended LED to us is the MJT 3528 series and for the smallest LES(Light Emitting surface) for spot lights or narrow beam solution use the ICOP Y11 LEDs. The Following Table provides Part numbers and recommended schematic for connecting the LEDs for each solution:

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit LED WICOP Y11 9V Part Number SZ8-Y11-WN-C8-C- ZZ* CRI 80 CCT 4000K Power[W] 10 12 14 16 18 20 22 24 NANO DRIVER SMJR-N-1-16 SMJR-N-1-24 Target lumen 1130 1350 1580 1800 2030 2260 2480 2710 LED Qty. on 1 step 10 10 10 10 10 10 10 10 LED Qty. on 2 step 12 12 12 12 12 12 12 12 Total[ea] 22 22 26 33 37 44 48 55 Current[mA] 48 58 68 77 87 97 106 116 LED MJT3528 9V Part Number SAW8A32E-ZZ* CRI 80 CCT 3000K Power[W] 10 12 14 16 18 20 22 24 NANO DRIVER SMJR-N-1-12 SMJR-N-1-24 Target lumen 1150 1380 1610 1840 2070 2300 2530 2760 LED Qty. on 1 step 10 10 10 10 10 10 10 10 LED Qty. on 2 step 12 12 12 12 12 12 12 12 Total[ea] 22 22 26 33 37 44 48 55 Current[mA] 48 58 68 77 87 97 106 116 Rset = Current[A] 0.0185 Rset = Current[A] 0.075 Small LES LED Connection Lowest Cost LED Connection ZZ is the color temperature eg 2k7=2700CCT, 4k =4000CCT ZZ is the color temperature eg 2k7=2700CCT, 4k =4000CCT Light Output is a for reference guide only. Actual light out will depend on specific LED and BIN selected To adjust the current down for a specific Lumen Target the current can be reduced by changing the value of RSET SMJR-N-2-16 SMJR-N-2-24 Light Output is a for reference guide only. Actual light out will depend on specific LED and BIN selected

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit Fig 1 Fig 2 Fig 3 Fig 4

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit Component Selection Fuse F1 Slow-Blow type 250V 1A I2T=2.85 Surge Protection MV1 Vrms = 250V, Isurge, max = 400A recommended TDK / CU3225K250G or equivalent Bleeder Resistor RB The Bleeding Function is required for compatibility to various Phase Cut or Triac Dimmers. The is required to maintain minimum holding currents and turn-on characteristics. For Power below 16W the Bleeder function is internal to the device. Above 16W an external resistor is required for thermal reasons. For Output Power >16W, use 2 1.2kΩ 1W carbon film resister is series. Passive Bleeder R2, C2 The Bleeding Function is required for compatibility to various Phase Cut or Triac Dimmers. The is required to latching currents. R2 value is recommended 680Ω 2W carbon film and C2 is 275V 47nF X2 capacitor. Flicker Capacitor C1 C1 is used to reduce the current ripple in the output LED strings. Any general purpose Aluminum Electrolytic capacitor may be used. Recommended value for <16W is 20uF and 30uF for >16W. Rating for 230V is recommended 350V and ripple current rating 1.3 times the current. Note that Aluminum Electrolytic capacitors do have a shelf life and wear out characteristic that causes the capacitance to decrease over time. This is accelerated with high temperature operation. Please consult with vendor for calculating life and recommendations to meet the expected product life. The value for Rset will need to change to achieve the same light output. Please contact the factory for recommendations. EMI Resistor R1 This component is only required for Class B conducted EMI. It may be omitted if not required.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit Analog Dimming The LED brightness can be adjusted by applying DC voltage to ADIM Pin. When the ADIM DC voltage becomes over 3.0V, the LED brightness is clamped at their maximum flux. When ADIM DC voltage is decreased to 0.4V, LED current becomes off. The voltage has hysteresis to stop flicker and requires the voltage to be raised to 0.45V to turn it back on. 0.4V0.45V LED Current 10% Decrease Increase Clamping 100% ADIM Input Voltage[V]3V 3.5V

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Operating Circuit External Resistor Setting –For Example The VADIM voltage is set using a resistive voltage divider from the VDIM_IN to ADIM pin. The recommended R3 resistor at 10kΩ. Calculate the R4 resistor using the following equation. 1) Considering the power consumption of the IC, set the resistance value. 2) When the Adim Pin level is 3V, the LED Flux reaches the 100%. Assumptions for the purposes of this example, the following are given as the application requirements: - VDIM_IN : External dimming voltage signals (0V : Min, 10V : Max) - R3 : 10kΩ (Recommended value[1]) - VADIM : 3V (Constant value[2]) R4 = R3 x VADIM VDIM_IN - VADIM R4 = R3 x VADIM 10KΩ x 3V = 4.3KΩ VDIM_IN - VADIM 10V - 3V 0-10V Control Signal VADIMVDIM_IN Notes :

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Device Functional Description Brand Model Dimming type Op. voltage[V] Dim. Range[%] Visible Flicker During Dimming Uniform DimmingAt Max Level Min ~ Max At Min Level IKEA EED200BRS Leading 230 5-99% No No No OK EED20PRS Leading 230 5-99% No No No OK SELECTRIC SSL509 Leading 230 5-98% No No No OK Merten 572599 Leading 230 5-98% No No No OK Merten MEG5133 Leading 230 5-96% No No No OK Busch 2247 Leading 230 5-99% No No No OK Busch 6513 Trailing 230 5-92% No No No OK KOPP 8068 Leading 230 5-99% No No No OK KOPP 8002 Trailing 230 5-93% No No No OK GA EFS700DA Leading 230 5-98% No No No OK GA EFE700DA Leading 230 5-98% No No No OK GA EF700DC Trailing 230 5-92% No No No OK EHMANN LUMEO ECO Leading 230 5-98% No No No OK EHMANN TAST-DIMMER ANSCHNITT Leading 230 5-98% No No No OK EHMANN DIMMER T46 Trailing 230 5-88% No No No OK Phase Cut Dimmer Compatibility 1) The list includes dimmers tested at time of publishing. This table will be updated from time to time as other dimmers are tested Notes :

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Mechanical Dimensions Notes : 1) All dimensions and tolerance conform to ASME Y14.5-2009 2) Terminal positions designation per JEP 95. 3) PIN 1 Identifier can be chamfer, INK mark, LASERED mark, Metallized. <TOP VIEW> <SIDE VIEW> <DETAIL A (Rotated 90º)>

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Recommended Solder Pad <SMJR-N-2-24> Notes : 1) ⓐ~ⓔ : Thermal PAD (Recommended wide copper traces.) 2) ⓐ~ⓑ : Electrical PAD do not connect to other devices(bleeder resistance – max. Power : 2W) 3) ⓒ~ⓔ : Electrical Isolated PAD. ⓐ ⓑ <SMJR-N-1-16>

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Reflow Soldering Characteristics Profile Feature Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 150 °C 180 °C 80-120 seconds Time maintained above: - Temperature (TL) - Time (tL) 217~220°C 80-100 seconds Peak Temperature (Tp) 250~255℃ Time within 5°C of actual Peak Temperature (tp)2 20-40 seconds Ramp-down Rate 6 °C/second max. Time 25°C to Peak Temperature 8 minutes max. Atmosphere Nitrogen (O2<1000ppm) Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Re-soldering should not be done after the LEDs have been soldered. If re-soldering is unavoidable, LED\`s characteristics should be carefully checked before and after such repair.. (3) Do not put stress on the LEDs during heating. (4) After reflow, do not clean PCB by water or solvent. SMT recommendation (1) Solder paste materials (SAC 305, No Cleaning Paste )  Senju M705-GRN360-KV

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Marking Information NANODRIVER SMJR-N-2-16 ① Product Name (Fixed 10 Digits) ② SMJR – driver(Fixed 4 Digits) ③ N - NANODRIVER(1 Digit) ④ 2 – 230V (1 Digit) ⑤ 16 – Maximum Power (2 Digits) 1. Seoul-semiconductor information DA1720 ⑥ DA – DATE (Fixed 2 Digits) ⑦ 17 – Production year(2 Digits) ⑧ 20 – Production week(2 Digits) ⑨ Lot numbers(11 Digits) 2. CM information AHAYR2.3A06 ② ③ ④ ⑤ SMJR N Typ. Voltage Maximum Power Mark Explain code Mark Explain code Mark Min Max Mark Max. SMJR SSC internal Code N NANO DRIVER 2 230 16 16 24 24

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Emitter Tape & Reel Packaging (1) Quantity : 2,000pcs/Reel (empty slot possible in taping reel) (2) Cumulative Tolerance : Cumulative Tolerance/16 pitches to be ±0.1mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape (4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof package. Notes : ( hole pitch cumulative tolerance: ±0.2, Unit: mm )

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Packaging Information

• Outer box is included 5ea inner box
• Outer box size (380 x 340 x 380mm)
• 10,000 PCS NANODRIVER packed per outer box
• Inner box is included sealing Al-bag
• Inner box size (340 x 325 x 50mm)
• 2,000 PCS NANODRIVER packed per inner box

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Label Information 1) It is attached to the bottom right corner of the outer box. 1) The model number designation is explained as follow SMJR : Seoul Semiconductor internal code N : NANODRIVER 2 : 230V XX: 16 : use up to 16W / 24 : use up to 24W 2) It is attached to the side of Inner and outer box TOTAL Quantity XXXX SEOUL SEMICONDUCTOR CO.,LTD. Notes : Notes : Model No. SMJR-N-2-XX (1) IIIII II IIIII III LOT ID XXXXXXXXXXX IIIII III IIIII IIIIIIII IIIII III Quantity XXXX IIIII II IIIII III Date YYMDDXXXXX-XXXXXXX IIIII II IIIII III SEOUL SEMICONDUCTOR CO.,LTD.

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Precaution for Use (1) Please review the NANODRIVER Application Note for proper protective circuitry usage. (2) Please note, NANODRIVER products run off of high voltage, therefore caution should be taken when working near the NANODRIVER products. (3) Make sure proper discharge prior to starting work. (4) DO NOT touch any of the circuit board, components or terminals with body or metal while circuit is active. (5) Please do not add or change wires while NANODRIVER circuit is active. (6) Please do not assemble in conditions of high moisture and/or oxidizing gas such as Cl, H2S, NH3, SO2, NOx, etc. (7) Please do not make any modification on module. (8) Please be cautious when soldering to board so as not to create a short between different trace patterns. (9) Do not impact or place pressure on this product because even a small amount of pressure can damage the product. The product should also not be placed in high temperatures, high humidity or direct sunlight since the device is sensitive to these conditions. (10) When storing devices for a long period of time before usage, please following these guidelines: * The devices should be stored in the anti-static bag that it was shipped in from Seoul- Semiconductor with opening. * If the anti-static bag has been opened, re-seal preventing air and moisture from being present in the bag. (11) LEDs and IC are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). The NANODRIVER product should also not be installed in end equipment without ESD protection. (12) LEDs and IC are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). The NANODRIVER product should also not be installed in end equipment without ESD protection. (13) Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as:

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Precaution for Use - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires - This damage usually appears due to the thermal stress produced during the EOS event c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device

www.seoulsemicon.com Product Data Sheet SMJR-N-2-XX - NANODRIVER Rev2.1, Sep 28, 2017 Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice.