SMDV3440-100 INNOGRATION | Alldatasheet

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Innogration (Suzhou) Co., Ltd. Document Number: SMDV3440-100 Preliminary Datasheet V1.0 3.4-4GHz, 100W, 50V GaN matched PA Module

Description

The SMDV3440-100 is a 100-watt, integrated 2-stage Power Amplifier Module, designed for 5G massive MIMO applications, with frequencies from 3.4 to 4GHz. The module is 50 Ω input fully matched and output partially matched, and requires minimal external components. The module offers a much smaller footprint than traditional discrete component solutions， with much less sensitivity for production, housed in 10*6mm cost effective plastic open cavity package, and heat dissipated by copper flange. The module incorporates advanced Doherty circuit delivering high power added efficiency for the entire module at 16W average power according to normal 8 dB back off. Innogration owns the patents for internal Doherty architecture, and related plastic open cavity.  Typical Performance of Doherty Demo (On Innogration fixture with device soldered with grounding vias): VDS= 50V, IDQ-main=70mA Vgs-main=-3.41V. Vgs-peak=-6V, Idq-driver=30mA, Vgs-Driver=-3.6V Notes: (1) Pulse Width=20 us, Duty cycle=10% (2) WCDMA signal: 3GPP test model 1; 1 to 64 DPCH; Channel Bandwidth=3.84MHz,PAR =10.5 dB at 0.01 % probability on CCDF. Features and Benefits  Adjustable drain bias to fit different power demand  Extremely good VBW performance to enable the broadest IBW/OBW  Industry leading RF performance for 5G MIMO AAU, for instance  32T:320W to 400W / 200MHz  Plastic open cavity without molding compound brings advantage compared to molded design  Minimize the risk of high density thermal distribution in fanless system for longer life time  Highly consistent RF performance for yield of volume production  50 Ω Input matched, output partially matched, effective PCB space smaller than 12*20mm  Integrated Doherty Final and driver Stage  6x10 mm Surface Mount Package, full copper flange underneath for grounding and heat dissipation, much more effective than LGA PCB based design Freq (GHz) Pulse CW Signal(1) Pavg=42dBm WCDMA Signal(2) GainP1 (dB) (dBm) (W) Gp (dB) D (%) ACPR5M (dBc)

Innogration (Suzhou) Co., Ltd.

6 RF IN RF Input

1 VDS-driver Driver stage, Drain Bias

4 VGS-driver Driver stage, Gate Bias

11 VGS-main Main Amplifier, Gate Bias

32 VGS-peak Peaking Amplifier, Gate Bias

result in excessive junction temperatures causing permanent damage. Table 1. Maximum Ratings Table 2. Thermal Characteristics (2) The reference Tcase temperature 85℃ is apply on the backside of package. temperature Tcase（85℃） apply on the groundside of the PCB, the total thermal resistance RθJC (TBD)℃/W. (4) The power dissipation in the table is overall dissipation which includes Carrier PA, Peaking PA and driver PA.. Table 3. ESD Protection Characteristics

Innogration (Suzhou) Co., Ltd. Table 4. Electrical Characteristics

Innogration (Suzhou) Co., Ltd. Document Number: SMDV3440-100 Preliminary Datasheet V1.0 Capacitor C6 2 3.9pFHigh Q Capacitor ATC600S3R9 ATC C3 1 0.7pFHigh Q Capacitor ATC600S0R9 ATC C8,C9,C10 3 10uF MLCC GRM32EC72A10 6ME05 Murata C4 1 0.3pFHigh Q Capacitor 251SHS0R3BSE TEMEX R1 1 5.1Ω Power Resistor ESR03EZPF5R1 ROHM C2 1 1.0pFHigh Q Capacitor ATC600S0R5 ATC C8,C9,C10 3 1nF MLCC Murata PCB 1 20mils 4350B Rogers Package Dimensions 10*6 Plastic Package Notes: 1. All dimensions are in mm; 2. The tolerances unless specified are ±0.2mm.

Innogration (Suzhou) Co., Ltd. Document Number: SMDV3440-100 Preliminary Datasheet V1.0 Mounting Footprint Pattern Notes: 1. All dimensions are in mm; 2. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. ALL vias are PTH to ground.

Revision history

Table 5. Document revision history Copyright  by Innogration (Suzhou) Co.,Ltd.