STCV10600RBY4 INNOGRATION | Alldatasheet
Document overview
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Technical content
Innogration (Suzhou) Co., Ltd. Document Number: STCV10600RBY4 Preliminary Datasheet V1.1 Gallium Nitride 50V, 600W,0.6-1GHz RF Power Transistor
Description
The STCV10600RBY4 is a 600watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular applications up to 1GHz. It can be configured as asymmetrical Doherty delivering 80-100W average power, according to normal 8-9dB back off. There is no guarantee of performance when this part is used outside of stated frequencies. Typical RF performance on 578-678MHz Doherty VDD = 50 Vdc, IDQ_main = 100mA, Vgs_peak=-4.9V, 1 carrier WCDMA signal PAR=10.5dB Freq (MHz) Pout (dBm) CCDF (dB) Ppeak (dBm) Ppeak (W) ACPR (dBc) Gain (dB) Eff (%)
Applications
Asymmetrical Doherty amplifier within <1GHz UHF TV P band communication Important Note: Proper Biasing Sequence for GaN HEMT Transistors Turning the device ON 1. Set VGS to the pinch--off (VP) voltage, typically –5 V 2. Turn on VDS to nominal supply voltage 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to VP, typically –5 V 3. Reduce VDS down to 0 V 4. Turn off VGS Figure 1: Pin Connection definition Transparent top view (Backside grounding for source) Table 1. Maximum Ratings
Innogration (Suzhou) Co., Ltd. Table 2. Thermal Characteristics Table 3. Ruggedness Characteristics
Innogration (Suzhou) Co., Ltd. Table 4. Bill of materials of application board (PCB layout upon request, RO4350B 30mils)
Innogration (Suzhou) Co., Ltd. Document Number: STCV10600RBY4 Preliminary Datasheet V1.1 Earless Flanged Ceramic Package; 4 leads OUTLINE VERSION REFERENCE EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA PKG-B4 03/12/2013 Drain Gate Source 1 2 3 4 5
Innogration (Suzhou) Co., Ltd. Document Number: STCV10600RBY4 Preliminary Datasheet V1.1
Revision history
Table 4. Document revision history makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. experts for each application. in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright by Innogration (Suzhou) Co.,Ltd.