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Features

  • 9A, 900V, RDS(on) = 1.05Ω@VGS = 10 V - Low gate charge ( typical 70 nC) - High ruggedness Fast switchingminimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLW9N90CZ Units VDSS Drain-Source Voltage 900 V Drain Current - Continuous (TC =2 5℃) 9 A G D S TO-3P G S ID Drain Current - Continuous (TC = 25℃) 9 A - Continuous (TC = 100℃)5 . 4 A IDM Drain Current - Pulsed (Note 1) 36 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ IAR Avalanche Current (Note 1) 9A EAR Repetitive Avalanche Energy (Note 1) 28 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 280 WPD - Derate above 25℃ 2.22 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter TYP MAX Units Symbol Parameter TYP MAX Units RθJC Thermal Resistance, Junction-to-Case -- 0.45 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- ℃/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 ℃/W

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics 90CZ BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 900 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.9 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 1 uA VDS = 720 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward V GS = 25 V, VDS = 0 V -- -- 10 uA IGSSR Gate-Body Leakage Current, Reverse V GS = -25 V, VDS = 0 V -- -- -10 uA On CharacteristicsOn Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 1.05 1.4 Ω gFS Forward Transconductance V DS = 40 V, ID = 4.5 A (Note 4) -- 9.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2780 -- pF C Output Capacitance 228 pFf = 1.0 MHzCoss Output Capacitance -- 228 -- pF Crss Reverse Transfer Capacitance -- 28 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 450 V, ID = 9 A, RG = 25 Ω (Note 4, 5) -- 55 -- ns tr Turn-On Rise Time -- 130 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Turn-Off Fall Time -- 80 -- ns Qg Total Gate Charge VDS = 720 V, ID = 9 A, V 10 V -- 70 -- nC Q Gate Source Charge 13 5 nCVGS = 10 V (Note 4, 5) Qgs Gate-Source Charge -- 13.5 -- nC Qgd Gate-Drain Charge -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 9 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 9 A, -- 850 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 10 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD  9A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform VCurrent Regulator 90CZ VGS 10V Qg Qgs QgdVGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Resistive Switching Test Circuit & Waveforms Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor R1 R2 g Vin Vout 10% 90%VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG Unclamped Inductive Switching Test Circuit & Waveforms td(on) tr t on t off td(off) tf 10V EAS =L L IAS 2---- BVDSS -- VDD BVDSS Vary tp to obtain required peak ID VDDC LL VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) 10V t p t p Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + 90CZ DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

  • IS controlled by Duty Factor 밆? VDD
  • dv/dt controlled by RG
  • ISD controlled by pulse period 10V VGS ( Driver ) I S IFM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) VDS ( DUT ) Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt VDD Body Diode Forward Voltage Drop Vf