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Features

  • 13.5A, 500V, RDS(on)typ = 0.38Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP14N50C SLF14N50C Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25℃) 13.5 13.5 * A - Continuous (TC = 100℃) 8.5 8.5 * A IDM Drain Current - Pulsed (Note 1) 52 52 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 860 mJ IAR Avalanche Current (Note 1) 13.5 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 195 48 W - Derate above 25℃ 1.56 0.39 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP14N50C SLF14N50C Units RθJC Thermal Resistance, Junction-to-Case 0.64 2.58 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W * Drain current limited by maximum junction temperature. G S D G D S G D S TO-220 TO-220F

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 500 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.5 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 uA VDS = 400 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.75 A -- 0.38 0.48 Ω gFS Forward Transconductance VDS = 40 V, ID = 6.75 A (Note 4) -- 15 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1600 -- pF Coss Output Capacitance -- 200 -- pF Crss Reverse Transfer Capacitance -- 20 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 13.5 A, RG = 25 Ω (Note 4, 5) -- 25 -- ns tr Turn-On Rise Time -- 100 -- ns td(off) Turn-Off Delay Time -- 130 -- ns tf Turn-Off Fall Time -- 100 -- ns Qg Total Gate Charge VDS = 400 V, ID = 13.5 A, VGS = 10 V (Note 4, 5) -- 45 -- nC Qgs Gate-Source Charge -- 8 -- nC Qgd Gate-Drain Charge -- 19 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 13.5 A, -- 410 -- ns Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 4.5 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6mH, IAS = 13.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD  13.5A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS2---- BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator R1 R2

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

  • IS controlled by Duty Factor 밆? VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
  • dv/dt controlled by RG
  • ISD controlled by pulse perio d