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  • 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP8N65C SLF8N65C Units VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25℃)7 . 5 7 . 5 * A - Continuous (TC = 100℃)4 . 5 4 . 5 * A IDM Drain Current - Pulsed (Note 1) 30 30 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 21 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 210 40 W - Derate above 25℃ 1.68 0.32 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP8N65C SLF8N65C Units RθJC Thermal Resistance, Junction-to-Case 0.6 3.1 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W * Drain current limited by maximum junction temperature. G S D G D S G D S TO-220 TO-220F

Maple Semiconductor CO., LTD http://www.maplesemi.com SLP8N65C / SLF8N65C Rev. 01 January 2017 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 650 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.7 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 uA VDS = 520 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.75 A -- 1.2 1.4 Ω gFS Forward Transconductance V DS = 40 V, ID = 3.75 A (Note 4) -- 7.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1000 -- pF Coss Output Capacitance -- 110 -- pF Crss Reverse Transfer Capacitance -- 12 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 325 V, ID = 7.5 A, RG = 25 Ω (Note 4, 5) -- 20 -- ns tr Turn-On Rise Time -- 50 -- ns td(off) Turn-Off Delay Time -- 80 -- ns tf Turn-Off Fall Time -- 70 -- ns Qg Total Gate Charge VDS = 520 V, ID = 7.5 A, VGS = 10 V (Note 4, 5) -- 29 -- nC Qgs Gate-Source Charge -- 4.7 -- nC Qgd Gate-Drain Charge -- 12.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 7.5 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 7.5 A, -- 350 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 3.3 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 7.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD  7A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

Maple Semiconductor CO., LTD http://www.maplesemi.com SLP8N65C / SLF8N65C Rev. 01 January 2017 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS2---- BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator R1 R2

Maple Semiconductor CO., LTD http://www.maplesemi.com SLP8N65C / SLF8N65C Rev. 01 January 2017 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

  • IS controlled by Duty Factor 밆? VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period
  • dv/dt controlled by RG
  • ISD controlled by pulse period