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SLW9N990C /g54/g47/g58/g28/g49/g28/g19/g38 /g28/g19/g19/g57/g3/g49/g16/g38/g75/g68/g81/g81/g72/g79/g3/g48/g50/g54/g41/g40/g55 /g42/g72/g81/g72/g85/g68/g79/g3/g39/g72/g86/g70/g85/g76/g83/g87/g76/g82/g81 This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching /g41/g72/g68/g87/g88/g85/g72/g86 - 9A, 900V, RDS(on) = 1.05/g525@VGS = 10 V - Low gate charge ( typical 70 nC) - High ruggedness Fast switchingminimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability /g39 /g36/g69/g86/g82/g79/g88/g87/g72/g3/g48/g68/g91/g76/g80/g88/g80/g3/g53/g68/g87/g76/g81/g74/g86/g3/g3/g3/g3/g3TC = 25C unless otherwise noted /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g54/g47/g58/g28/g49/g28/g19/g38 /g56/g81/g76/g87/g86 VDSS Drain-Source Voltage 900 V Drain Current - Continuous (TC =2 5) 9 A /g42/g3/g3/g39/g3/g3/g54 /g55/g50/g16/g22/g51 /g42 /g54 ID Drain Current - Continuous (TC = 25) 9 A - Continuous (TC = 100)5 . 4 A IDM Drain Current - Pulsed (Note 1) 36 A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 900 mJ IAR Avalanche Current (Note 1) 9A EAR Repetitive Avalanche Energy (Note 1) 28 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) 280 WPD - Derate above 25 2.22 W/ TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds /g55/g75/g72/g85/g80/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3 /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g60/g51 /g48/g36/g59/g56/g81/g76/g87/g86 /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g60/g51 /g48/g36/g59/g56/g81/g76/g87/g86 R/g537JC Thermal Resistance, Junction-to-Case -- 0.45 /W R/g537JS Thermal Resistance, Case-to-Sink Typ. 0.24 -- /W R/g537JA Thermal Resistance, Junction-to-Ambient -- 40 /W
/g40/g79/g72/g70/g87/g85/g76/g70/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3/g3/g3/g3/g3/g3/g3/g3/g3TC = 25C unless otherwise noted /g54/g92/g80/g69/g82/g79 /g51/g68/g85/g68/g80/g72/g87/g72/g85 /g55/g72/g86/g87/g3/g38/g82/g81/g71/g76/g87/g76/g82/g81/g86 /g48/g76/g81 /g55/g92/g83 /g48/g68/g91 /g56/g81/g76/g87/g86 /g50/g73/g73/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 90C BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 900 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25 -- 0.9 -- V/ IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 1 uA VDS = 720 V, TC = 125 -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward V GS = 25 V, VDS = 0 V -- -- 10 uA IGSSR Gate-Body Leakage Current, Reverse V GS = -25 V, VDS = 0 V -- -- -10 uA /g50/g81/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g50/g81/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.5 A -- 1.05 1.4 /g525 gFS Forward Transconductance V DS = 40 V, ID = 4.5 A (Note 4) -- 9.0 -- S /g39/g92/g81/g68/g80/g76/g70/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2780 -- pF C Output Capacitance 228 pFf = 1.0 MHzCoss Output Capacitance -- 228 -- pF Crss Reverse Transfer Capacitance -- 28 -- pF /g54/g90/g76/g87/g70/g75/g76/g81/g74/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 td(on) Turn-On Delay Time VDD = 450 V, ID = 9 A, RG = 25 /g525 (Note 4, 5) -- 55 -- ns tr Turn-On Rise Time -- 130 -- ns td(off) Turn-Off Delay Time -- 110 -- ns tf Turn-Off Fall Time -- 80 -- ns Qg Total Gate Charge VDS = 720 V, ID = 9 A, V 10 V -- 70 -- nC Q Gate Source Charge 13 5 nCVGS = 10 V (Note 4, 5) Qgs Gate-Source Charge -- 13.5 -- nC Qgd Gate-Drain Charge -- 27 -- nC /g39/g85/g68/g76/g81/g16/g54/g82/g88/g85/g70/g72/g3/g39/g76/g82/g71/g72/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3/g68/g81/g71/g3/g48/g68/g91/g76/g80/g88/g80/g3/g53/g68/g87/g76/g81/g74/g86 IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 9 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 9 A, -- 850 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 10 -- uC /g49/g82/g87/g72/g86/g29 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21mH, IAS = 9A, VDD = 50V, RG = 25/g525, Starting TJ = 25C 3. ISD /g1009A, di/dt /g100200A/us, VDD /g100BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width /g100300us, Duty cycle /g1002% 5. Essentially independent of operating temperature
/g55/g92/g83/g76/g70/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86 VGS T o p: 1 50V 90C Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Notes : 1. 250/g541 s Pulse Test 2. TC = 25 ID, Drain Current [A] 150 o C o C -55 o C Notes : 1. VDS = 50V 2. 250/g541s Pulse Test ID, Drain Current [A] (KIWTG1P4GIKQP%JCTCEVGTKUVKEU (KIWTG6TCPUHGT%JCTCEVGT KUVKEU VDS, Drain-Source Voltage [V] 2468 1 0 /g541 VGS, Gate-Source Voltage [V] 3.0 ce 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 VGS = 20V VGS = 10V Note : TJ = 25 RDS(ON) [/g525 ], Drain-Source On-Resistanc 150 Notes : 1. VGS = 0V 2. 250/g541 s Pulse Test 25 IDR, Reverse Drain Current [A] (KIWTG1P4GUKUVCPEG8CTKCVKQPXU &TCKP%WTTGPVCPF)CVG8QNVCIG (KIWTG$QF[&KQFG(QTYCTF8QNVCIG 8CTKCVKQPYKVJ5QWTEG%WTTGPV CPF6GORGTCVWTG ID, Drain Current [A] V SD, Source-Drain voltage [V] 3000 3500 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = CgdCiss VDS = 450V VDS = 180V ge [V] 500 1000 1500 2000 2500 Notes : 1. VGS = 0 V 2. f = 1 MHzCrss Coss Capacitance [pF] VDS, Drain-Source Voltage [V] 0 1 02 03 04 05 06 07 08 0 VDS = 720V Note : ID = 9A VGS, Gate-Source Voltag QG, Total Gate Charge [nC] (KIWTG%CRCEKVCPEG%JCTCEVGTKUVKEU (KIWTG)CVG%JCTIG%JCT CEVGTKUVKEU DS,g [ ] G,g [ ]
/g55/g92/g83/g76/g70/g68/g79/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g86/g3/g3(Continued) 1.2 e 3.0 90C 0.9 1.0 1.1 Notes : 1. VGS = 0 V 2. ID = 250 /g541 A BVDSS, (Normalized) Drain-Source Breakdown Voltage 0.5 1.0 1.5 2.0 2.5 Notes : 1. VGS = 10 V 2. ID = 4.5 A RDS(ON), (Normalized) Drain-Source On-Resistance (KIWTG$TGCMFQYP8QNVCIG8CTKCVKQP XU 6GORGTCVWTG (KIWTG1P4GUKUVCPEG8CTKCVKQP XU 6GORGTCVWTG -100 -50 0 50 100 150 200 0.8 TJ, Junction Temperature [ o -100 -50 0 50 100 150 200 0.0 TJ, Junction Temperature [ o Operation in This Area is Limited by R DS(on) 100 ms 10 /g80s DC 10 ms 1 ms 100 /g80s Notes : 1. TC = 25 o C 2. TJ = 150 o C 3. Single Pulse ID, Drain Current [A] 25 50 75 100 125 150 ID, Drain Current [A] (KIWTG/CZKOWO5CHG1RGTCVKPI#TGC (KIWTG/CZKOWO&TCKP% WTTGPV XU %CUG6GORGTCVWTG VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] D=0 5 e Notes : 1. Z/g537J C(t) = 0.45 /W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z/g537J C(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z/g537J C(t), Thermal Respons 3'0 W W (KIWTG6TCPUKGPV6JGTOCN4GURQPUG%WTXG t1, Square Wave Pulse Duration [sec]
/g42/g68/g87/g72/g3/g38/g75/g68/g85/g74/g72/g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80 VCurrent Regulator 90C VGS 10V Qg Qgs QgdVGS DUT VDS 300nF 50K/g525 200nF12V Same Type as DUT /g53/g72/g86/g76/g86/g87/g76/g89/g72/g3/g54/g90/g76/g87/g70/g75/g76/g81/g74/g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor R1 R2 /g74 Vin Vout 10% 90%VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG /g56/g81/g70/g79/g68/g80/g83/g72/g71/g3/g44/g81/g71/g88/g70/g87/g76/g89/g72/g3/g54/g90/g76/g87/g70/g75/g76/g81/g74/g3/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 td(on) tr t on t off td(off) tf 10V EAS =L L IAS 2---- BVDSS -- VDD BVDSS Vary tp to obtain required peak ID VDDC LL VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) 10V t p t p Time
/g51/g72/g68/g78/g3/g39/g76/g82/g71/g72/g3/g53/g72/g70/g82/g89/g72/g85/g92/g3/g71/g89/g18/g71/g87/g55/g72/g86/g87/g3/g38/g76/g85/g70/g88/g76/g87/g3/g3/g9/g3/g3/g58/g68/g89/g72/g73/g82/g85/g80/g86 DUT + 90C DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by G
- I S controlled by Duty Factor ? VDD
- dv/dt controlled by RG
- ISD controlled by pulse period 10V VGS ( Driver ) I S IFM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) VDS ( DUT ) Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt VDD Body Diode Forward Voltage Drop Vf