SLSD-71N4 SILONEX | Alldatasheet
Document overview
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Technical content
Features
- Visible to IR spectral irradiance range
- High reliability
- Oxide passivation
- Low capacitance, high speed
- Protective coating
Description
The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance, relatively high shunt impedance, and stability. The photodiodes have a protective coating that protects them from humidity effects. Absolute Maximum Ratings Storage Temperature -40°C to +105°C Operating Temperature -40°C to +105°C +RED (Anode) -BLK (Cathode) Dimensions in mm. Sensitive Area: 45.2 sq.mm. 150 5.1 2.5 25.41.0 Also available without leads as part number SLCD-61N4 1.0 0.8 0.6 0.4 100° 90° 80° 70° 60° 50° 40° 30° 20° 10° Half Angle = 60° Directional Sensitivity Characteristics 20° 40° 60° 80° 100° 120° 0.0 0.2 0.4 0.6 0.8 1.0 Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min Typ Max Units Test Conditions ISC Short Circuit Current 1.4 2.3 mA VR=0V, Ee=25mW/cm2 (1) VOC Open Circuit Voltage 0.40 V Ee=25mw/cm2 (1) ID Reverse Dark Current 5 µA VR=5V, Ee=0 CJ Junction Capacitance 1.5 nF VR=0V, Ee=0, f=1MHz Sλ Spectral Sensitivity 0.55 A/W λ=940nm VBR Reverse Breakdown Voltage 20 V IR=100µA λP Maximum Sensitivity Wavelength 930 nm λR Sensitivity Spectral Range 400 1100 nm θ1/2 Acceptance Half Angle 60 deg (off center-line) Notes: (1) Ee = light source @ 2854 °K Specifications subject to change without notice