SLCD-61N1 SILONEX | Alldatasheet
Document overview
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Technical content
Features
- Visible to IR spectral irradiance range
- High reliability
- Oxide passivation
- Linear short circuit current
- Low capacitance, high speed
- Available in arrays where # indicates number of elements ( maximum of 9 elements )
Description
The Silonex series of silicon solde rable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance, relatively high shunt impedance, and stability. These devices also provide a reliable, inexpensive detector for applications such as light beam sensing and instrument ation. The electrical characteristics below are per element. In the multi-element arrays the cathodes are common to all elements. Absolute Maximum Ratings Storage Temperature -40°C to +125°C Operating Temperature -40°C to +125°C Anode Dimensions in mm. (+/- 0.13) Cathode Sensitive Area (10.4 sq. mm.) 0.4 5.08 2.54 Also available with leads as part number SLSD-71N1 1.0 0.8 0.6 0.4 100° 90° 80° 70° 60° 50° 40° 30° 20° 10° Half Angle = 60° Directional Sensitivity Characteristics 20° 40° 60° 80° 100° 120° 0.0 0.2 0.4 0.6 0.8 1.0 Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min Typ Max Units Test Conditions ISC Short Circuit Current 0.4 0.5 mA VR=0V, Ee=25mW/cm2 (1) VOC Open Circuit Voltage 0.40 V Ee=25mw/cm2 (1) ID Reverse Dark Current 1.7 µA VR=5V, Ee=0 CJ Junction Capacitance 0.4 nF VR=0V, Ee=0, f=1MHz Sλ Spectral Sensitivity 0.55 A/W λ=940nm VBR Reverse Breakdown Voltage 20 V IR=100µA λP Maximum Sensitivity Wavelength 930 nm λR Sensitivity Spectral Range 400 1100 nm θ1/2 Acceptance Half Angle 60 deg Specifications subject to change without notice 104117 REV 0 Notes: (1) Ee = light source @ 2854 °K