SLCD-61N6 SILONEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Features
- Visible to IR spectral irradiance range
- High reliability
- Oxide passivation
- Linear short circuit current
- Low capacitance, high speed
Description
The Silonex series of silicon solderable planar photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of illumination. These devices are widely used for lig ht sensing and power generation because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance, relatively high shunt impedance, and stability. These devices also provide a reliable and inexpensive detector for instrumentation and light beam sensing applications. Absolute Maximum Ratings Storage Temperature -40°C to +125°C Operating Temperature -40°C to +125°C AnodeCathode Sensitive Area (109.1 sq.mm.) Dimensions in mm. (+/- 0.13) 0.4 25.4 5.08 Also available with leads as part number SLSD-71N6 1.010°20°30°40°50° 60° 70° 80° 90° 100° 1.0 .8 .6 .4 0 20° 40° 60° 80° 100° 120°o Half Angle = 60° Directional Sensitivity Characteristics Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Min Typ Max Units Test Conditions ISC Short Circuit Current 3.7 6.0 mA VR=0V, Ee=25mW/cm2 (1) VOC Open Circuit Voltage 0.40 V Ee=25mw/cm2 (1) ID Reverse Dark Current 3.3 µA VR=5V, Ee=0 CJ Junction Capacitance 1.8 nF VR=0V, Ee=0, f=1MHz Sλ Spectral Sensitivity 0.55 A/W λ=940nm VBR Reverse Breakdown Voltage 20 V IR=100µA λP Maximum Sensitivity Wavelength 930 nm λR Sensitivity Spectral Range 400 1100 nm θ1/2 Acceptance Half Angle 60 deg (off center-line) Specifications subject to change without notice 104115 REV 0 Notes: (1) Ee = light source @ 2854 °K