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  • 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness Fast switching 26C minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP40N26C SLF40N26C Units VDSS Drain-Source Voltage 260 V Drain Current - Continuous (TC =2 5℃) 40 40 * AID Drain Current - Continuous (TC = 25℃) 40 40 A - Continuous (TC = 100℃) 20 20 * A IDM Drain Current - Pulsed (Note 1) 130 130 * A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 1120 mJ IAR Avalanche Current (Note 1) 40 A EAR Repetitive Avalanche Energy (Note 1) 25.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 256 41.8 WPD - Derate above 25℃ 2.05 0.34 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP40N26C SLF40N26C Units * Drain current limited by maximum junction temperature. Symbol Parameter SLP40N26C SLF40N26C Units RθJC Thermal Resistance, Junction-to-Case 0.49 3.0 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics 26C / SLF40N2 BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 260 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.26 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 260 V, VGS = 0 V -- -- 1 uA VDS = 208 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward V GS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics 26COn Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 20A -- 0.12 0.16 Ω gFS Forward Transconductance V DS = 40 V, ID = 20 A (Note 4) -- 22 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1560 -- pF C Output Capacitance 370 pFf = 1.0 MHzCoss Output Capacitance -- 370 -- pF Crss Reverse Transfer Capacitance -- 150 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 130 V, ID = 40 A, RG = 25 Ω (Note 4, 5) -- 30 -- ns tr Turn-On Rise Time -- 35 -- ns td(off) Turn-Off Delay Time -- 150 -- ns tf Turn-Off Fall Time -- 85 -- ns Qg Total Gate Charge VDS = 208 V, ID = 40 A, V 10 V -- 55 -- nC Q Gate Source Charge 12 nCVGS = 10 V (Note 4, 5) Qgs Gate-Source Charge -- 12 -- nC Qgd Gate-Drain Charge -- 23 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 40 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 130 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 40 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 40 A, -- 220 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 2.0 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 40A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD  40A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width  300us, Duty cycle  2% 5. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform VCurrent Regulator 26C / SLF40N2 VGS 10V Qg Qgs QgdVGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT 26C Resistive Switching Test Circuit & Waveforms Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor R1 R2 g Vin Vout 10% 90%VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG Unclamped Inductive Switching Test Circuit & Waveforms td(on) tr t on t off td(off) tf 10V EAS =L L IAS 2---- BVDSS -- VDD BVDSS Vary tp to obtain required peak ID VDDC LL VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) 10V t p t p Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + 26C / SLF40N2 DUT VDS L I S 26CDriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

  • I S controlled by Duty Factor 밆? VDD
  • dv/dt controlled by RG
  • ISD controlled by pulse period 10V VGS ( Driver ) I S IFM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) VDS ( DUT ) Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt VDD Body Diode Forward Voltage Drop Vf