SLP9N90CZ MAPLESMI | Alldatasheet
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SLP9N90CZ/ SLF9N90CZSLP9N90CZ/ SLF9N90CZ900VN-Channel MOSFETGeneral DescriptionThis Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features-9A, 900V, RDS(on)typ.= 1.0Ω@VGS= 10 V-Low gate charge ( typical 69.5nC)-High ruggedness-Fast switching-100% avalanche tested-Improved dv/dtcapability Absolute Maximum Ratings TC= 25°C unless otherwise noted G D SG D STO-220 TO-220FGS D * Drain current limited by maximum junction temperature. S
Typical Characteristics (Continued) 10-510-410-310-210-1100 10110-2 10-1 100 Zθ JC(t), Thermal Responset1, Square Wave Pulse Duration [sec]Figure 11. Transient Thermal Response Curvefor SLP9N90CZ PDMt1t2 10-510-410-310-210-1100 10110-2 10-1 Zθ JC(t), Thermal Responset1, Square Wave Pulse Duration [sec] 10-510-410-310-210-1100 10110-2 10-1 Zθ JC(t), Thermal Responset1, Square Wave Pulse Duration [sec]Figure 11. Transient Thermal Response Curvefor SLF9N90CZ PDMt1t2
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & WaveformsVout90% Charge VGS10VQg QgsQgd VDD( 0.5 rated VDS )VoutVin RL 3mAVGS Current Sampling (IG)ResistorCurrent Sampling (ID)Resistor DUTVDS300nF50KΩ200nF12V Same Typeas DUTCurrent Regulator R1 R2 Vin10%td(on)trton tofftd(off)tf Vary tpto obtainrequired peak ID 10V VDDC LLVDSIDRG tp DUT BVDSS t pVDD IAS VDS (t)ID (t)Time VDD( 0.5 rated VDS )10V Vin DUTRG
Peak Diode Recovery dv/dtTest Circuit & WaveformsDUTVDS+ --LIS DriverVGSRG Same Type as DUTVGS •dv/dt controlled by 밨G•IScontrolled by Duty Factor 밆? VDD
- dv/dtcontrolled by RG•ISDcontrolled by pulse period 10VVGS( Driver )IS( DUT ) VDS( DUT ) VDD Body DiodeForward Voltage DropVf IFM, Body Diode Forward Current Body Diode Reverse CurrentIRM Body Diode Recovery dv/dt di/dt Gate Pulse Period