SLP65R190SJ MAPLESMI | Alldatasheet

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Technical content

Features

  • 20A, 6 0V, R DS(on) typ. = 0.16 Ω GS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter SLP65R190SJ SLF65R190SJ Units V DSS Drain-Source Voltage 650 V I D Drain Current - Continuous (T C = 25 A - Continuous (T C = 100 A I DM Drain Current - Pulsed (Note 1) A V GSS Gate-Source Voltage V EAS Single Pulsed Avalanche Energy (Note 2) 485 mJ I AR Avalanche Current (Note 1) A E AR Repetitive Avalanche Energy (Note 1) mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 205 W - Derate above 25 1.67 0.3 T J , T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter SLP65R190SJ SLF65R190SJ Units R θ JC Thermal Resistance, Junction-to-Case 0.6 3.6 R θ JS Thermal Resistance, Case-to-Sink Typ. 0.5 R θ JA Thermal Resistance, Junction-to-Ambient Drain current limited by maximum junction temperature. G S D G D S G D S TO-220 TO-220F CB-FET

Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 March . 2013 SLP65R190SJ / SLF65R190SJ

Electrical Characteristics

T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 uA 650 V BV DSS T J Breakdown Voltage Temperature Coefficient I D = 250 uA, Referenced to 25 0.6 I DSS Zero Gate Voltage Drain Current V DS = 650 V, V GS = 0 V uA V DS = 480 V, T C = 125 uA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, V DS = 0 V -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250 uA 2.5 4.5 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, I D = 5 A 0.16 0.19 Ω g FS Forward Transconductance V DS = 40 V, I D = 5 A (Note 4) S Dynamic Characteristics C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz 1440 pF C oss Output Capacitance 300 pF C rss Reverse Transfer Capacitance pF Switching Characteristics t d(on) Turn-On Delay Time V DD 400 V, I D R G = 2 Ω (Note 4 , 5 ns t r Turn-On Rise Time ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time ns Q g Total Gate Charge V DS = 480 V, I D = 10 A, V GS = 10 V (Note 4 , 5 nC Q gs Gate-Source Charge 7.8 nC Q gd Gate-Drain Charge nC Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 4.9 A 1.5 V t rr Reverse Recovery Time V GS = 0 V, I S = 4.9 A, 475 ns Q rr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) 5.8 uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS = 3.5A, V DD = 50V, R G = 25 Ω , Starting T J = 25 C 3. I SD I D , di/dt 200A/us, V DD BV DSS, Starting T J = 25 C 4. Pulse Test : Pulse width 300us, Duty cycle 5. Essentially independent of operating temperature

Figure 19. Body Diode Forward Voltage

Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 March . 2013 SLP65R190SJ / SLF65R190SJ Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms E AS L L I AS ---- BV DSS -- V DD BV DSS V in V out 10% 90% t d(on) t r t on t off t d(off) t f Charge V GS 10V Q g Q gs Q gd Vary t p to obtain required peak I D 10V V DD C L L V DS I D R G t p DUT BV DSS t p V DD I AS V DS (t) I D (t) Time V DD ( 0.5 rated V DS 10V V out V in R L DUT R G 3mA V GS Current Sampling (I G Resistor Current Sampling (I D Resistor DUT V DS 300nF 50K Ω 200nF 12V Same Type as DUT Current Regulator R R

Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 March . 2013 SLP65R190SJ / SLF65R190SJ Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT V DS L I S Driver V GS R G Same Type as DUT V GS dv/dt controlled by 밨 G I S controlled by Duty Factor 밆 V DD 10V V GS ( Driver ) I S ( DUT ) V DS ( DUT ) V DD Body Diode Forward Voltage Drop V f I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period dv/dt controlled by R G I SD controlled by pulse period