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- 11A, 650V, RDS(on)typ= 0.33Ω@VGS = 10 V - Low gate charge ( typical 23nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability LEAD FREE 65R420S2These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. - Improved dv/dt capability Pb RoHS D D Absolute Maximum Ratings TC = 25°C unless otherwise noted G S G S D-PAK G D S I-PAK g C Symbol Parameter SLB65R420S2 SLI65R420S2 Units VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (T C = 25℃)1 1 A - Continuous (TC = 100℃)7 A IDM Drain Current - Pulsed (Note 1) 44 A VGSS Gate-Source Voltage ±30 V EAS Sin gle Pulsed Avalanche Energy (Note 2) 250 mJgg y IAR Avalanche Current (Note 1) 11 A dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns PD Power Dissipation (TC = 25℃)9 2 W - Derate above 25℃ 0.74 W/ ℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter SLB65R420S2 SLI65R420S2 Units RθJC Thermal Resistance, Junction-to-Case 1.36 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. -- ℃/W R Th l R i t J ti t Ab i t 62 5 ℃/W * Drain current limited by maximum junction temperature. RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W
Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Ch t i ti 5R420S2/SLI6 Off Characteristics BVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 650 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 uA VDS = 520 V, TC = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0V -- -- 100 nA 65R420S2IGSSF Gate Body Leakage Current, Forward VGS 30 V, VDS 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 0.33 0.4 Ω Rg Gate resistance F=1MHZ -- 5.2 -- Ω Dynamic Characteristics Ciss Input Capacitance VDS = 100 V, VGS = 0 V, f = 1.0 MHz -- 632 -- pF Coss Output Capacitance -- 37 -- pF Crss Reverse Transfer Capacitance -- 2.3 -- pF Switching Characteristics td(on) Turn-On Delay Time -- 12 -- ns() y VDD = 325 V, ID = 11A, RG = 24 Ω (Note 4, 5) tr Turn-On Rise Time -- 35 -- ns td(off) Turn-Off Delay Time -- 64 -- ns tf Turn-Off Fall Time -- 31 -- ns Qg Total Gate Charge VDS = 520 V, ID = 11A, VGS = 10 V (Note 4, 5) -- 23 -- nC Qgs Gate-Source Charge -- 5.3 -- nC Qgd Gate-Drain Charge -- 11 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 11A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 11A, -- 361 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 3.9 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 79 mH, IAS = 2.4A, VDD =100V, RG = 25Ω, Starting TJ = 25°C 3. ISD 11A, di/dt 100A/us, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature
1 ID（A)
Figure 1. On-Region Characteristics Figure 2. Transfer Character istics Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Gate Charge Test Circuit & Waveform 5R420S2/SLI6 VGS 10V Qg Qgs QgdVGS VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator 65R420S2 Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT R1 R2 Resistive Switching Test Circuit & Waveforms Vout 90%VDD Vout Vin RL Vin 10% td(on) tr t on t off td(off) tf ( 0.5 rated VDS ) 10V Vin DUT RG Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2---- BV -- V BVDSS LL V 2 BVDSS -- VDD Vary tp to obtain required peak ID 10V VDDC VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms 5R420S2/SLI6 DUT VDS I S 65R420S2L S DriverVGS RG Same Type as DUT V • dv/dt controlled by밨 VDD
- dv/dt controlled by RGVGS • dv/dt controlled by 밨G
- I S controlled by Duty Factor 밆? 10V VGS (D r i v e r) D = Gate Pulse Width Gate Pulse Period dv/dt controlled by RG
- ISD controlled by pulse period ( Driver ) I S ( DUT ) IFM , Body Diode Forward Current IRM di/dt VDS ( DUT ) VDDVf Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop