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  • 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB60R080SS/SLI60R080SS Units VDSS Drain-Source Voltage 600 V ID D r a i n C u r r e n t - C o n t inuous (TC = 25℃) 47 A - C o n t i nuous (TC = 100℃) 30 A I D M D r a i n C u r r e n t - P u l s e d (Note 1) 140 A VGSS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy ( N o t e 2 ) 720 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25℃) 205 W - D e r a t e above 25℃ 1.67 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance, Junction-to-Case 0.6 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 ℃/W Maple Semiconductor CO.,LTD http://www.meipusen.com Rev 1.0 September 2017 Page1 D General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion
  • 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability S D G SLB60R080SS/SLI60R080SS 600V N-Channel MOSFET SLB60R080SS/SLI60R080SS G S D2-Pak I2-Pak G D S

Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V,ID = 250uA, TJ=25℃ 600 - - V VGS = 0V,ID = 250uA, TJ=150℃ - 650 - V ΔBVDSS ΔTJ Breakdown Voltage Temperature coefficient ID = 250uA, referenced to 25°C - 0.6 - V/°C IDSS Drain-Source Leakage Current VDS =600V, VGS = 0V - - 1 uA VDS =480V, TC = 125 °C - 10 - uA IGSS Gate-Source Leakage, Forward VGS = 20V, VDS = 0V - - 100 nA Gate-source Leakage, Reverse VGS = -20V, VDS = 0V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 3. 0 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS =10 V, ID = 23.5A - 68 80 mΩ Dynamic Characteristics Ciss Input Capacitance VGS =0 V, VDS =25V, f = 1MHz - 3100 - pF Coss Output Capacitance - 2399 - Crss Reverse Transfer Capacitance - 62 - Dynamic Characteristics td(on) Turn-on Delay Time VDD =300V, ID =25A, RG =25Ω \` 46 - nS tr Rise Time - 120 - td(off) Turn-off Delay Time - 137 - tf Fall Time - 116 - Qg Total Gate Charge VDS =480V, VGS =10V, ID =25A - 88 - nC Qgs Gate-Source Charge - 22 - Qgd Gate-Drain Charge(Miller Charge) - 42 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. IS Maximum Continuous Drain-Source Diode Forward Current - - 4 7 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 140 VSD Diode Forward Voltage IS =25A, VGS =0V - - 1.5 V trr Reverse Recovery Time IS =25A, VGS=0V, dIF/dt=100A/us - 450 - nS Qrr Reverse Recovery Charge - 1.4 - uC NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L =10mH, IAS =12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ ID, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Maple Semiconductor CO.,LTD http://www.meipusen.com Rev 1.0 September 2017 Page2 SLB60R080SS/SLI60R080SS

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Maple Semiconductor CO.,LTD http://www.meiousen.com Rev 1.0 September 2017 Page4 SLB60R080SS/SLI60R080SS

Gate Charge Test Circuit & Waveform 3mA VGS Current Sampling (I G) Resistor Current Sampling (I D) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Current Regulator R1 R2 Charge VGS 10V Qg Qgs Qgd Resistive Switching Test Circuit & Waveforms VDD ( 0.5 rated V DS ) 10V Vout Vin RL DUT RG Vin Vout 10% 90% td(on) tr t on t off td(off) tf Unclamped Inductive Switching Test Circuit & Waveforms Vary tp to obtain required peak I D 10V VDD C LL VDS ID RG t p DUT EAS =L L IAS2---- BVDSS -- VDD BVDSS BVDSS t p VDD IAS VDS (t) ID (t) Time Maple Semiconductor CO.,LTD http://www.meipusen.com Rev 1.0 September 2017 Page5 SLB60R080SS/SLI60R080SS

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Same Type as DUT VGS dv/dt controlled by 밨G IS controlled by Duty Factor 밆? VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width Gate Pulse Period Maple Semiconductor CO.,LTD http://www.meipusen.com Rev 1.0 September 2017 Page6 SLB60R080SS/SLI60R080SS