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Features

  • 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness Fast switching SLB5N65S / SLI5N65S 650V N-Channel MOSFET to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Fast switching - 100% avalanche tested - Improved dv/dt capability D D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N65S SLI5N65S Units VDSS Drain-Source Voltage 650 V Drain Current Continuous (T =2 5℃) 45 A G S G S D2-PAK G D S I2-PAK ID Drain Current - Continuous (TC = 25℃) 4.5 A - Continuous (TC = 100℃)2 . 5 A IDM Drain Current - Pulsed (Note 1) 16 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 128 mJ IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 3.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) 104 104 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃1/8" from case for 5 seconds Thermal Characteristics Sb l Pt Max Ui t Symbol Parameter UnitsSLB5N65S SLI5N65S RθJC Thermal Resistance, Junction-to-Case 1.20 1.20 ℃/W RθJS Thermal Resistance, Case-to-Sink Typ. 62.5 62.5 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 110 110 ℃/W

Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics 5S / SLI5N65SBVDSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 uA 650 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/ ℃ IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 25 uA VDS = 520 V, TC = 125℃ -- -- 250 uA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse V GS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, ID = 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.0 A -- 1.8 2.5 Ω gFS Forward Transconductance V DS = 40 V, ID = 2.0 A (Note 4) -- 2.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 590 -- pF C Output Capacitance 48 pFf = 1.0 MHzCoss Output Capacitance -- 48 -- pF Crss Reverse Transfer Capacitance -- 5 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5 A, RG = 25 Ω (Note 4, 5) -- 23 -- ns tr Turn-On Rise Time -- 33 -- ns td(off) Turn-Off Delay Time -- 61 -- ns tf Turn-Off Fall Time -- 200 -- ns Qg Total Gate Charge VDS = 480 V, ID = 4.5A, -- 13.3 -- nC Q Gt SC h 30 CVGS = 10 V (Note 4, 5) Qgs Gate-Source Charge -- 3.0 -- n C Qgd Gate-Drain Charge -- 4.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A VSD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 4.5 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, IS = 4.5 A, -- 390 -- ns Qrr Reverse Recovery Charge dI F / dt = 100 A/us (Note 4) -- 1.5 -- uC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 4.5A,L=25mH, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/us, VDD ≤B VDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operating temperature

Gate Charge Test Circuit & Waveform V Current Regulator 5S / SLI5N65SVGS 10V Qg Qgs QgdVGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Resistive Switching Test Circuit & Waveforms Charge 3mA Current Sampling (IG) Resistor Current Sampling (ID) Resistor R1 R2 g Vin Vout 10% 90%VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG Unclamped Inductive Switching Test Circuit & Waveforms td(on) tr t on t off td(off) tf 10V EAS =L L IAS 2---- BVDSS -- VDD BVDSS Vary tp to obtain required peak ID VDDC LL VDS ID RG DUT BVDSS VDD IAS VDS (t) ID (t) 10V t p t p Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + 5S / SLI5N65SDUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by 밨G

  • IS controlled by Duty Factor 밆? VDD
  • dv/dt controlled by RG
  • ISD controlled by pulse period 10V VGS ( Driver ) I S IFM , Body Diode Forward Current D = Gate Pulse Width Gate Pulse Period S ( DUT ) VDS ( DUT ) Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt VDD Body Diode Forward Voltage Drop Vf