SH200PG DOINGTER | Alldatasheet
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www.doingter.cn — 1 — SH200PG Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TA=25℃ -1.8 A Continuous Drain Current- TA=70℃ -1.4 IDM Pulsed Drain Current -7.2 PD Power Dissipation 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 62.5 ℃/ W G D D D D S S S A ll data sheet.com
www.doingter.cn — 2 — SH200PG Package Marking and Ordering Information： Part NO. Marking Package SH200PG H200P SOP-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-100V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.2 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance mΩ GFS Forward Transconductance VDS=-10V, ID=-3A --- 6.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-50V, VGS=0V, f=1MHz --- 1475 2210 pF Coss Output Capacitance --- 890 1330 Crss Reverse Transfer Capacitance --- 60 90 Switching Characteristics, td(on) Turn-On Delay Time2.3 VDS=-50V, VGS=-10V ID=-1.8A,RGEN=25Ω --- 18 36 ns tr Rise Time2.3 --- 8 16 ns td(off) Turn-Off Delay Time2.3 --- 100 200 ns tf Fall Time2.3 --- 30 60 ns Qg Total Gate Charge2.3 VDS=-80V , VGS=-10V , ID=-1.8A --- 20 40 nC Qgs Gate-Source Charge 2.3 --- 3.5 7 nC Qgd Gate-Drain “Miller” Charge2.3 --- 4.6 9 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V A ll data sheet.com
www.doingter.cn — 3 — SH200PG lS Diode Forward Current2 --- --- -1.8 A ISM --- --- -3.6 trr --- 13 --- ns Qrr --- 15 --- nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) Pu lsed Source Current V =0V , Force Current G S R everse Recovery Time R everse Recovery Charge VR= -100V, IS= -1A di/dt=100A/µs, TJ= 25℃ . Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. ID , Continuous Drain Current (A) TJ , Junction Temperature (℃ ) F ig.1 Continuous Drain Current vs. T J N ormalized On Resistance (mΩ ) TJ , Junction Temperature (℃ ) F ig.2 Normalized RDSON vs. T J N ormalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃ ) Normalized Vt h v s. TJ VG S , G ate to Source V oltage (V) Q g , Gate Charge (nC) Fig.4 Gate Charge Waveform F ig. A ll data sheet.com
www.doingter.cn — 4 — SH200PG N ormalized Thermal Response (RθJ S quare Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) F ig.6 Maximum Safe Operation Area -VD Drain to Source V oltage (V) A ll data sheet.com
www.doingter.cn — 5 — SH200PG A ll data sheet.com