SFT1443-E DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID= A,RDS(ON)< mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ A Continuous Drain Current-TC=70℃ IDM Pulsed Drain Current 45.4 PD Power Dissipation,TC=25℃ W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case ℃/W Derating factor 11.3 11.3 120 ,TC=70℃ W 29.9 19.1 4.17 DG D S SFT1443-E All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 2.4 V Dynamic Characteristics Ciss Input Capacitance VDS= V, VGS=0V, f=1MHz --- 500 pF Coss Output Capacitance --- Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time --- 12.4 ns tr Rise Time --- ns td(off) Turn-Off Delay Time --- 27.3 ns tf Fall Time --- 2.6 ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=3A --- 16.8 nC Qgs Gate-Source Charge --- nC Qgd Gate-Drain “Miller” Charge --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=10A --- --- 1.2 V VDD=30V, RL=15Ω VGS=10V,RG=2.5Ω --- --- 25 --- --- --- --- --- --- --- --- --- --- ≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. Notes: Pulse test: pulse width RDS(ON) Drain-Source On Resistance VGS=10V,ID=8A --- 120 mΩ VGS=4.5V,ID=4A --- 150 --- --- SFT1443-E All d ata sheet.com
www.doingter.cn — 3 — Typical Characteristics： (TJ =25℃ unless otherwise noted) SFT1443-E All d ata sheet.com
04Nov, 2013-Ver1.0 SFT1443-E — 4 — www.doingter.cn 0086-0755-8278-9056 All d ata sheet.com