SFT1342-E DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-35A,RDS(ON)<28mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -35 A Continuous Drain Current-TC=100℃ -22.1 Pulsed Drain Current1 -140 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation 72.6 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.72 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 DG D S SFT1342-E All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-60V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-8A --- 22 28 mΩ VGS=-4.5V,ID=-6A --- 26 35 GFS Forward Transconductance VDS =-10V, ID=-3A --- 18 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-25V, VGS=0V, f=1MHz --- 2595 3900 pF Coss Output Capacitance --- 162 240 Crss Reverse Transfer Capacitance --- 115 170 Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=-30V, ID=-1A, RGEN=6Ω, VGS=-10V --- 25 50 ns tr Rise Time2,3 --- 13.8 28 ns td(off) Turn-Off Delay Time2,3 --- 148 290 ns tf Fall Time2,3 --- 51 100 ns Qg Total Gate Charge2,3 VGS=-10V, VDS=-30V, ID=-5A --- 43.8 88 nC Qgs Gate-Source Charge 2,3 --- 4.6 9 nC Qgd Gate-Drain “Miller” Charge2,3 --- 8.3 17 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V SFT1342-E All d ata sheet.com
www.doingter.cn — 3 — Ls Continuous Source Current --- --- -35 A lsm Pulsed Source Current.3 --- --- -70 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Normalized Gate Threshold V oltage(V) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) SFT1342-E All d ata sheet.com
www.doingter.cn — 4 — Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area -VDS , Drain to Source V oltage (V)Square Wave Pulse Duration (s) Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform SFT1342-E 0086-0755-8278-9056 All d ata sheet.com