SFH7016 AMSCO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 23

Technical content

1 | Version 1.5 | 2022-04-12 www.osram-os.com SFH 7016 Datasheet Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved

2 | Version 1.5 | 2022-04-12 Multi Chip LED SFH 7016 Green (530 nm), Red (655 nm) and Infrared (940 nm) Emitter

Applications

  • Health Monitoring (Heart Rate Monitoring, Pulse Oximetry)

Features

  • Package: clear silicone - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - SMT package - Suitable for SMT assembly - Available on tape and reel - Emitters can be controlled separately

Ordering Information

Type Brightness 1)2) Ordering Code SFH 7016 Q65112A7849

3 | Version 1.5 | 2022-04-12 Type Brightness 1)2) Ordering Code

4 | Version 1.5 | 2022-04-12 Maximum Ratings TS = 25 °C Parameter Symbol Values Values Values

  • true green ● hyper red ● infrared (940 nm) Operating temperature Top min. max. -40 °C 85 °C -40 °C 85 °C -40 °C 85 °C Storage temperature Tstg min. max. -40 °C 85 °C -40 °C 85 °C -40 °C 85 °C Junction temperature Tj max. 100 °C 100 °C 100 °C Forward current IF max. 30 mA 40 mA 60 mA Forward current pulsed tp ≤ 50 µs (G); tp ≤ 900 µs (R); tp ≤ 60 µs (IR); D ≤ 0.005 IF pulse max. 0.75 A 0.3 A 1 A Reverse voltage 3) VR max. 5 V 5 V 5 V Power consumption Ptot max. 90 mW 100 mW 110 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV 2 kV 2 kV The stated maximum ratings refer to one chip, unless otherwise specified.

5 | Version 1.5 | 2022-04-12 Characteristics IF = 20 mA; tp = 20 ms; TS = 25 °C Parameter Symbol Values Values Values

  • true green ● hyper red ● infrared (940 nm) Peak wavelength λpeak typ. 526.0 nm 660.0 nm 950.0 nm Centroid wavelength 4) λcentroid min. typ. max. 522.5 nm 530.0 nm 541.5 nm 652.5 nm 655.0 nm 657.5 nm 930.5 nm 940.0 nm 949.5 nm Spectral bandwidth at 50% Irel,max (FWHM) ∆λ typ. 32.0 nm 17.0 nm 42.0 nm Half angle φ typ. 60 ° 60 ° 60 ° Dimensions of active chip area L x W typ. 0.5 x 0.5 mm x mm 0.3 x 0.3 mm x mm 0.3 x 0.3 mm x mm Rise time (10% / 90%) IF = 100 mA; RL = 50 Ω tr typ. 59 ns 17 ns 16 ns Fall time (10% / 90%) IF = 100 mA; RL = 50 Ω tf typ. 59 ns 17 ns 16 ns Forward voltage 5) VF min. typ. max. 2.20 V 2.40 V 2.80 V 1.70 V 1.90 V 2.20 V 1.10 V 1.30 V 1.50 V Reverse current 3) VR = 5 V IR max. 10 µA 10 µA 10 µA Radiant intensity 1)2) IF = 20 mA; tp = 20 ms Ie min. typ. max. 2.2 mW/sr 4 mW/sr 5.4 mW/sr 2.5 mW/sr 4.2 mW/sr 7 mW/sr 1.65 mW/sr 3 mW/sr 4.05 mW/sr Total radiant flux 6) Φe typ. 14 mW 14 mW 11 mW Temperature coefficient of voltage TCV typ. -3.6 mV / K -1.7 mV / K -0.8 mV / K Temperature coefficient of brightness TCI typ. -0.35 % / K -0.7 % / K -0.3 % / K Temperature coefficient of wave- length TCλ typ. 0.03 nm / K 0.18 nm / K 0.3 nm / K Thermal resistance junction solder point real 7) RthJS real typ. max.

210 K / W

260 K / W

310 K / W

320 K / W

380 K / W

6 | Version 1.5 | 2022-04-12 Relative Spectral Emission 8), 9)

  • true green: Ie,rel = f (λ); IF = 20 mA; tp = 20 ms 450 500 550 600 650 λ [ 100 Relative Spectral Emission 8), 9)
  • hyper red: Ie,rel = f (λ); IF = 20 mA; tp = 20 ms 5500 nm OHF05734 Irel λ 600 650 700 750 100

7 | Version 1.5 | 2022-04-12 Relative Spectral Emission 8), 9)

  • infrared (940 nm): Ie,rel = f (λ); IF = 20 mA; tp = 20 ms 800 nm OHF04134 100 Irel λ 850 900 950 1025 Radiation Characteristics 8), 9) Irel = f (ϕ); TS = 25 °C 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚

8 | Version 1.5 | 2022-04-12 Forward current 8), 9)

  • true green: IF = f (VF); single pulse; tp = 100 µs 100 500 1000 Forward current 8), 9)
  • hyper red: IF = f (VF); single pulse; tp = 100 µs 100 Forward current 8), 9)
  • infrared (940 nm): IF = f (VF); single pulse; tp = 100 µs I OHF05642 F VF mA V 102 310 010 110 1 2 3 4

9 | Version 1.5 | 2022-04-12 Relative Radiant Intensity 8), 9)

  • true green: Ie/Ie(20mA) = f (IF); single pulse; tp = 25 µs 100 0.3 0.4 0.5 Relative Radiant Intensity 8), 9)
  • hyper red: Ie/Ie(20mA) = f (IF); single pulse; tp = 100 µs 5 10 50 100 0.1 0.5 Relative Radiant Intensity 8), 9)
  • infrared (940 nm): Ie/Ie(20mA) = f (IF); s. p.; tp = 100 µs OHF05669 310 Ι e (20 mA)e Ι FI 102110100 mA 10-2 10-1 100 101 210

10 | Version 1.5 | 2022-04-12 Max. Permissible Forward Current

  • true green: IF,max = f (TS); Rthjs = 260K / W 0 20 40 60 80 Max. Permissible Forward Current
  • hyper red: IF,max = f (TS); Rthjs = 310K / W 0 20 40 60 80 Max. Permissible Forward Current
  • infrared (940 nm): IF,max = f (TS); Rthjs = 380K / W 0 20 40 60 80

11 | Version 1.5 | 2022-04-12 Permissible Pulse Handling Capability

  • true green: IF = f (tp); D = parameter; TS = 25°C 10-4 10-3 0.01 0.1 1 10 200 400 600 :D =1 :D =0 ,5 :D =0 ,2 :D =0 ,1 :D =0 ,05 :D =0 ,02 :D =0 ,01 :D =0 ,005 Permissible Pulse Handling Capability
  • hyper red: IF = f (tp); D = parameter; TS = 25°C 10-4 10-3 0.01 0.1 1 10 100 200 300 :D =1 :D =0 ,5 :D =0 ,2 :D =0 ,1 :D =0 ,05 :D =0 ,02 :D =0 ,01 :D =0 ,005 Permissible Pulse Handling Capability
  • infrared (940 nm): IF = f (tp); D = parameter; = 25°C 10-4 10-3 0.01 0.1 1 10 200 400 600 800 1000 :D =1 :D =0 ,5 :D =0 ,2 :D =0 ,1 :D =0 ,05 :D =0 ,02 :D =0 ,01 :D =0 ,005

12 | Version 1.5 | 2022-04-12 Permissible Pulse Handling Capability

  • true green: IF = f (tp); D = parameter; TS = 85°C 10-4 10-3 0.01 0.1 1 10 200 400 600 :D=1 :D=0 ,5 :D =0,2 :D =0,1 :D =0,05 :D =0,02 :D =0,01 :D =0,005 Permissible Pulse Handling Capability
  • hyper red: IF = f (tp); D = parameter; TS = 85°C 10-4 10-3 0.01 0.1 1 10 100 200 300 :D=1 :D=0 ,5 :D =0,2 :D =0,1 :D =0,05 :D =0,02 :D =0,01 :D =0,005 Permissible Pulse Handling Capability
  • infrared (940 nm): IF = f (tp); D = parameter; = 85°C 10-4 10-3 0.01 0.1 1 10 200 400 600 800 1000 :D=1 :D=0 ,5 :D =0,2 :D =0,1 :D =0,05 :D =0,02 :D =0,01 :D =0,005

13 | Version 1.5 | 2022-04-12 Dimensional Drawing 10) Further Information: Approximate Weight: 3.0 mg Pin Description

1 Cathode infrared emitter (940 nm)

2 Anode green/ red/ infrared emitter

3 Cathode green emitter (530 nm)

4 Cathode red emitter (655 nm)

5 Anode green/ red/ infrared emitter

14 | Version 1.5 | 2022-04-12 Recommended Solder Pad 10) For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere.

15 | Version 1.5 | 2022-04-12 Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

16 | Version 1.5 | 2022-04-12 Taping 10)

17 | Version 1.5 | 2022-04-12 Tape and Reel 11) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 8 + 0.3 / - 0.1 mm 60 mm 8.4 + 2 mm 14.4 mm 3000

18 | Version 1.5 | 2022-04-12 Barcode-Product-Label (BPL) Dry Packing Process and Materials 10) OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label

19 | Version 1.5 | 2022-04-12 Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for expo- sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita- tion, annoyance, visual impairment, and even accidents, depending on the situation. Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit www.osram-os.com/appnotes

20 | Version 1.5 | 2022-04-12 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on our website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications Our components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. Our products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using our components in product safety devices/ applications or medical devices/applications, buyer and/or customer has to inform our local sales partner immediately and we and buyer and /or customer will analyze and coordinate the customer-specific request between us and buyer and/or customer.

21 | Version 1.5 | 2022-04-12 Glossary 1) Radiant intensity: Measured at a solid angle of Ω = 0.01 sr 2) Brightness: The brightness values are measured with a tolerance of ±11%. 3) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical char- acteristics or damage the LED. 4) Wavelength: The wavelengths are measured with a tolerance of ±1 nm. 5) Forward Voltage: The forward voltages are measured with a tolerance of ±0.1 V. 6) Total radiant flux: Measured with integrating sphere. 7) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g. metal block) 8) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 9) Testing temperature: TA = 25°C (unless otherwise specified) 10) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 11) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

22 | Version 1.5 | 2022-04-12

Revision History

1.0 2019-07-08 Initial Version 1.1 2019-09-27 Characteristics Glossary 1.2 2020-08-06 New Layout Schematic Transportation Box Dimensions of Transportation Box 1.3 2021-05-27 Features 1.4 2021-11-17 Characteristics Electro - Optical Characteristics (Diagrams) 1.5 2022-04-12 Characteristics Derating (Diagrams) New Layout

23 | Version 1.5 | 2022-04-12 Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved