SFH4200 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Very highly efficient GaAs-LED
  • DC (with modulation) or pulsed operations are possible
  • High reliability
  • High pulse handling capability
  • Very short switching times (10 ns)
  • Suitable for surface mounting (SMT)
  • Available on tape and reel
  • SFH 4200 same package as SFH 320 SFH 4205 same package as SFH 325
  • SFH 4205: Suitable only for IR-reflow soldering.

Applications

  • High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia)
  • Analog and digital Hi-Fi audio and video signal transmission
  • Low power consumption (battery) equipment
  • Suitable for professional and high-reliability
  • Alarm and safety equipment
  • IR free air transmission

2000-01-01 2 OPTO SEMICONDUCTORS SFH 4200, SFH 4205 Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 4200 SFH 4205 Q62702-P978 Q62702-P5165 Kathodenkennzeichnung: abgesetzte Ecke Cathode marking: bevelled edge TOPLED SIDELED Grenzwerte (TA = 25°C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 40… + 100 °C Sperrspannung Reverse voltage VR 3V Durchlaßstrom Forward current IF (DC) 100 mA Stoßstrom,tp = 10 µs,D = 0 Surge current IFSM 1A Verlustleistung Power dissipation Ptot 180 mW Wärmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm 2 each Wärmewiderstand Sperrschicht - Lötstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block RthJA RthJS 450 200 K/W K/W

SFH 4200, SFH 4205 2000-01-01 3 OPTO SEMICONDUCTORS Kennwerte (TA = 25°C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA,tp = 20 ms λpeak 950 nm Spektrale Bandbreite bei 50% vonImax Spectral bandwidth at 50% of Imax IF = 100 mA,tp = 20 ms Δλ 40 nm Abstrahlwinkel Half angle ϕ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm 2 Abmessungen der aktiven Chipfläche Dimensions of the active chip area L × B L × W 0.3× 0.3 mm Schaltzeiten,Ie von 10% auf 90% und von 90% auf 10%, beiIF = 100 mA,tp = 20 ms,RL = 50Ω Switching times,Ιe from 10% to 90% and from 90% to10%,IF = 100 mA,tp = 20 ms,RL = 50Ω tr,tf 10 ns Durchlaßspannung, Forward voltage IF = 100 mA,tp = 20 ms IF = 1 A,tp = 100µs VF VF 1.5 (≤ 1.8) 3.2 (≤ 3.6) V V Sperrstrom, Reverse current VR = 3 V IR 0.01 (≤ 10) µA Gesamtstrahlungsfluß, Total radiant flux IF = 100 mA,tp = 20 ms Φ e 28 mW Temperaturkoeffizient vonIe bzw.Φ e, IF = 100 mA Temperature coefficient ofIe orΦ e,IF = 100 mA TC I – 0.44 %/K Temperaturkoeffizient vonVF,IF = 100 mA Temperature coefficient ofVF,IF = 100 mA TC V – 1.5 mV/K Temperaturkoeffizient vonλ,IF = 100 mA Temperature coefficient ofλ,IF = 100 mA TC λ + 0.2 nm/K

2000-01-01 4 OPTO SEMICONDUCTORS SFH 4200, SFH 4205 StrahlstärkeIe in Achsrichtung gemessen bei einem RaumwinkelΩ = 0.01 sr Radiant IntensityIe in Axial Direction at a solid angle ofΩ = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA,tp = 20 ms Ie min. Ie typ. 8.5 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1 A,tp = 100µs Ie typ. 55 mW/sr

SFH 4200, SFH 4205 2000-01-01 5 OPTO SEMICONDUCTORS Relative Spectral Emission Irel =f (λ) Max. Permissible Forward Current IF =f (TA),RthJA 1) Thermal resistance junction - ambient mounted on PC-board (FR4), pad size 16 mm 2 (each). OHF00777 nm800 Ιrel λ 0 850 900 950 1000 1100 100 OHF00359 FΙ 100 120 20 40 60 80 100 120 mA TA R thJA= 450 K/W Radiant Intensity Single pulse,tp = 20µs Radiation CharacteristicsIrel= f(ϕ) Ie Ie 100 mA =f(IF) e e (100 mA) mA OHF00809 FΙ Ι Ι 10 4010 10 1 10 23 10 10 -3 10 -2 10 -1 10 2 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ Forward CurrentIF = f(VF) single pulse,tp = 20µs OHF00784 10 -3 V mA ΙF V F 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4

2000-01-01 6 OPTO SEMICONDUCTORS SFH 4200, SFH 4205 Maßzeichnung Package Outlines Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. SFH 4200 GPL06724 (typ) 0.7 0.9 1.7 2.1 0.12 0.18 0.5 1.1 3.3 3.7 0.4 0.6 2.6 3.0 2.1 2.3 Cathode marking 3.0 3.4 (2.4) 0.1 4˚±1 SFH 4205 GPL06880 1.1 0.92.54 spacing (2.4) 2.8 2.4 4.2 3.8 (2.85) 0.7 4.2 3.8 (2.9) 3.8 3.4(R1) Cathode marking Cathode Anode (1.4) (0.3)

SFH 4200, SFH 4205 2000-01-01 7 OPTO SEMICONDUCTORS Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Löthinweise Soldering Conditions Bauform Types Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Reflowlötung Reflow Soldering Lötbadtemperatur Temperature of the Soldering Bath Maximal zulässige Lötzeit Max. Perm. Soldering Time Lötzonen- temperatur Temperature of Soldering Zone Maximale Durchlaufzeit Max. Transit Time TOPLED SIDELED 260 °C 10 s 245 °C 245 °C 10 s 10 s