SFAF3L SEOUL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Datasheet sections
- 1 SSC-QP-7-03-44(갑)
ITEM FULL COLOR SIDE VIEW LED MODEL SFAF3L CUSTOMER Customer Approved by Approved by Approved by / / / Supplier Drawn by Checked by Approved by / / / SEOUL SEMICONDUCTOR CO., LTD.
Rev. 1.00 SFAF3L 1. Featu res z Package: SMT Solderability Dimension : 7.0 × 2.0 × 1.9 (mm) Low Thermal Resistance RoHS Compliant, Lead Free 6-Pin (R, G, B separate) type InGaAlP(Red) / InGaN(Green) / InGaN(Blue) SFAF3L is Very Useful Side View LED in Back Light Unit Application Long Life Time (MTTF*1 : > 15,000HR @ Ta=25℃, If=20(R), 40(G), 20(B) mA) z z z z z z z 2. Applicat ions z Flat Backlighting (LCD, Display) Monitor, PDA, CNS, Notebook Coupling into Light Guide Panel Illuminations z z z *1 MTTF = Mean Time To Failure. Failure means that Luminous intensity degrades to 50% of initial value. SEOUL SEMICONDUCTOR CO., LTD.
2 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 3. Absolute Maximum Ratings (Ta = 25°C) Value Parameter Symbol RED GREEN BLUE Unit Power Dissipation Pd *1 72 204 102 mW Forward Current IF 30 60 30 mA Peak Forward Current IFM *2 100 180 100 mA Reverse Voltage VR 5 V Operating Temperature Topr -40 ~ +85 °C Storage Temperature Tstg -40 ~ +100 °C *1 Care is to b e tak en that P ower Dis sipation d oes not excee d the A bsolute Maxim um Rating of the p roduct. T he v alue f or one LE D device.(Single color) *2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics ( Ta = 25°C) Item Symbol Condition Min Typ Max Unit RED IF = 20 mA 1.8 - 2.4 GREEN IF = 40 mA 2.8 - 3.6 Forward Voltage BLUE VF IF = 20 mA 2.8 - 3.4 V Reverse Current IR VR = 5 V 50 µA RED IF = 20 mA 500 - 700 GREEN IF = 40 mA 2050 - 2500 Luminous Intensity*1 BLUE IV IF = 20 mA 170 - 230 mcd Viewing Angle *2 2θ1/2 IF = 60 mA 120 ˚ RED IF = 20 mA 620 - 625 GREEN IF = 40 mA 525 - 535 Dominant Wavelength BLUE λd IF = 20 mA 455 - 460 nm RED IF = 20 mA - 330 - GREEN IF = 40 mA - 310 - Thermal Resistance *3 BLUE Rth j-a IF = 20 mA - 310 - °C/W *1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Thermal resistance from LED junction to the specific environment Note : All measurements were made under the standardized environment of Seoul Semiconductor. SEOUL SEMICONDUCTOR CO., LTD.
3 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 5. Rank of SFAF3L ▣Luminous Intensity[Iv] RED GREEN BLUE IV Rank Name MIN MAX IV Rank Name MIN MAX IV Rank Name MIN MAX RN 500 550 GN 2050 2200 BN 170 200 RO 550 600 GO 2200 2350 BO 200 230 RP 600 650 GP 2350 2500 RQ 650 700 Mix Rank Name R G B Mix Rank Name R G B N1 N N N P1 P N N N2 N N O P2 P N O N3 N O N P3 P O N N4 N O O P4 P O O N5 N P N P5 P P N N6 N P O P6 P P O O1 O N N Q1 Q N N O2 O N O Q2 Q N O O3 O O N Q3 Q O N O4 O O O Q4 Q O O O5 O P N Q5 Q P N O6 O P O Q6 Q P O ▣Dominant Wavelength[λd] RED GREEN BLUE DW Rank Name MIN MAX DW Rank Name MIN MAX DW Rank Name MIN MAX RB 622.5 625.0 GB 527.5 530.0 GC 530.0 532.5 GD 532.5 535.0 Mix Rank Name R G B Mix Rank Name R G B DW1 A A A DW5 B A A DW2 A B A DW6 B B A DW3 A C A DW7 B C A DW4 A D A DW8 B D A ▣Forward Voltage RED GREEN BLUE DW Rank Name MIN MAX MIN MAX MIN MAX SEOUL SEMICONDUCTOR CO., LTD.
4 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 6. Rank Name Table X1 X2 X3 Max Vf Mix λd Mix Iv Label Name Code Name Label Name Code Name Label Name Code Name Label Name Code Name
1 ZDW1N1 49 ZDW3N1 97 ZDW5N1 145 ZDW7N1
2 ZDW1N2 50 ZDW3N2 98 ZDW5N2 146 ZDW7N2
3 ZDW1N3 51 ZDW3N3 99 ZDW5N3 147 ZDW7N3
4 ZDW1N4 52 ZDW3N4 100 ZDW5N4 148 ZDW7N4
5 ZDW1N5 53 ZDW3N5 101 ZDW5N5 149 ZDW7N5
6 ZDW1N6 54 ZDW3N6 102 ZDW5N6 150 ZDW7N6
7 ZDW1O1 55 ZDW3O1 103 ZDW5O1 151 ZDW7O1
8 ZDW1O2 56 ZDW3O2 104 ZDW5O2 152 ZDW7O2
9 ZDW1O3 57 ZDW3O3 105 ZDW5O3 153 ZDW7O3
10 ZDW1O4 58 ZDW3O4 106 ZDW5O4 154 ZDW7O4
11 ZDW1O5 59 ZDW3O5 107 ZDW5O5 155 ZDW7O5
12 ZDW1O6 60 ZDW3O6 108 ZDW5O6 156 ZDW7O6
13 ZDW1P1 61 ZDW3P1 109 ZDW5P1 157 ZDW7P1
14 ZDW1P2 62 ZDW3P2 110 ZDW5P2 158 ZDW7P2
15 ZDW1P3 63 ZDW3P3 111 ZDW5P3 159 ZDW7P3
16 ZDW1P4 64 ZDW3P4 112 ZDW5P4 160 ZDW7P4
17 ZDW1P5 65 ZDW3P5 113 ZDW5P5 161 ZDW7P5
18 ZDW1P6 66 ZDW3P6 114 ZDW5P6 162 ZDW7P6
19 ZDW1Q1 67 ZDW3Q1 115 ZDW5Q1 163 ZDW7Q1
20 ZDW1Q2 68 ZDW3Q2 116 ZDW5Q2 164 ZDW7Q2
21 ZDW1Q3 69 ZDW3Q3 117 ZDW5Q3 165 ZDW7Q3
22 ZDW1Q4 70 ZDW3Q4 118 ZDW5Q4 166 ZDW7Q4
23 ZDW1Q5 71 ZDW3Q5 119 ZDW5Q5 167 ZDW7Q5
24 ZDW1Q6 72 ZDW3Q6 120 ZDW5Q6 168 ZDW7Q6
25 ZDW2N1 73 ZDW4N1 121 ZDW6N1 169 ZDW8N1
26 ZDW2N2 74 ZDW4N2 122 ZDW6N2 170 ZDW8N2
27 ZDW2N3 75 ZDW4N3 123 ZDW6N3 171 ZDW8N3
28 ZDW2N4 76 ZDW4N4 124 ZDW6N4 172 ZDW8N4
29 ZDW2N5 77 ZDW4N5 125 ZDW6N5 173 ZDW8N5
30 ZDW2N6 78 ZDW4N6 126 ZDW6N6 174 ZDW8N6
31 ZDW2O1 79 ZDW4O1 127 ZDW6O1 175 ZDW8O1
32 ZDW2O2 80 ZDW4O2 128 ZDW6O2 176 ZDW8O2
33 ZDW2O3 81 ZDW4O3 129 ZDW6O3 177 ZDW8O3
34 ZDW2O4 82 ZDW4O4 130 ZDW6O4 178 ZDW8O4
35 ZDW2O5 83 ZDW4O5 131 ZDW6O5 179 ZDW8O5
36 ZDW2O6 84 ZDW4O6 132 ZDW6O6 180 ZDW8O6
37 ZDW2P1 85 ZDW4P1 133 ZDW6P1 181 ZDW8P1
38 ZDW2P2 86 ZDW4P2 134 ZDW6P2 182 ZDW8P2
39 ZDW2P3 87 ZDW4P3 135 ZDW6P3 183 ZDW8P3
40 ZDW2P4 88 ZDW4P4 136 ZDW6P4 184 ZDW8P4
41 ZDW2P5 89 ZDW4P5 137 ZDW6P5 185 ZDW8P5
42 ZDW2P6 90 ZDW4P6 138 ZDW6P6 186 ZDW8P6
43 ZDW2Q1 91 ZDW4Q1 139 ZDW6Q1 187 ZDW8Q1
44 ZDW2Q2 92 ZDW4Q2 140 ZDW6Q2 188 ZDW8Q2
45 ZDW2Q3 93 ZDW4Q3 141 ZDW6Q3 189 ZDW8Q3
46 ZDW2Q4 94 ZDW4Q4 142 ZDW6Q4 190 ZDW8Q4
47 ZDW2Q5 95 ZDW4Q5 143 ZDW6Q5 191 ZDW8Q5
48 ZDW2Q6 96 ZDW4Q6 144 ZDW6Q6 192 ZDW8Q6
SEOUL SEMICONDUCTOR CO., LTD.
5 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 7. Characteristic Diagram Forward Current vs. Forward Voltage Intensity vs. Forward Current [Red, Blue ] 100 Ta = 25 O C Forward Voltage [V] Forward Current [mA] RED GREEN BLUE Intensity vs. Forward Current [Green ] Intensity vs. Ambient Temperature 5 101 52 02 53 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Relative Luminous Intensity IV / IV (20mA) [Rel.] Forward Current [mA] Blue Red 10 20 30 40 50 60 70 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Red Relative Luminous Intensity IV / IV (25 oC) [Rel.] Ambient Temperature ( o Green Blue 0 10 20 304 05 06 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Forward Current [mA] Relative Luminous Intensity IV / IV (40mA) [Rel.] Green SEOUL SEMICONDUCTOR CO., LTD.
6 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L Wavelength vs. Forward Current [Red, Blue ] Wavelength vs. Forward Current [Green ] Spectrum Dominant Wavelength vs. Ambient Temperature 400 500 600 700 Ta = 25 O C IF = 20 mA Intensity [%] Wavelength [nm] 0 102 0 304 0 102 0 304 Forward Current [mA] Dominant wavelength Shift [nm] Blue Red 00 0 102 03 04 0 50 60 Forward Current [mA] Dominant wavelength Shift [nm] Green 10 20 30 40 50 60 70 10 20 30 40 50 60 70 10 20 30 40 50 60 70 Dominant wavelength Shift [nm] Ambient Temperature ( o Blue Red Green SEOUL SEMICONDUCTOR CO., LTD.
7 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L Radiation Diagram -100 -80 -60 -40 -20 0 20 40 60 80 100 0.0 0.5
1.0 Ta = 25
O C x axis y axis Intensity Theta SEOUL SEMICONDUCTOR CO., LTD.
8 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 8. Reliability (1) TEST ITEMS AND RESULTS TEST ITEM Test conditions Note Number of Damaged Reference Life Test Ta = 25°C; IF = 20 mA /chip 1000 hr 0/20 EIAJ ED-4701 100 101 High Humidity Heat Life Test Ta = 60°C; RH = 90%, IF = 20 mA /chip 1000 hr 0/20 EIAJ ED-4701 100 102 Thermal Shock -30°C ~ 85°C (30 min) (30 min) 20 cycle 0/50 EIAJ ED-4701 300 307 High Temperature Life Test Ta = 85°C; IF = 15 mA /chip 1000 hr 0/20 - Low Temperature Life Test Ta = - 40°C; IF = 20 mA /chip 1000 hr 0/20 - High Temperature Storage Ta = 100°C 1000 hr 0/50 EIAJ ED-4701 200 201 Low Temperature Storage Ta = - 40°C 1000 hr 0/50 EIAJ ED-4701 200 202 Humidity Heat Storage Ta = 60°C; RH = 90% 1000 hr 0/20 ESD Human Body Mode : 1 kV 1 time 0/50 MIL-STD 888E (2) CRITERIA FOR JUDGING THE DAMAGE Criteria for Judgment Item Symbol Test Condition Min. Max. Forward Voltage VF IF = 20 mA/chip - U.S.L × 1.2 Reverse Current IR VR = 5 V - U.S.L × 2.0 Luminous Intensity IV IF = 20 mA/chip L.S.L × 0.7 - SEOUL SEMICONDUCTOR CO., LTD.
9 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 9. Precautions (1) Stor age conditions Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption. z z z z z z z z z z z z a. Keep it at a temperature in the range from 5°C to 30°C and at a humidity of less than 60% RH. In case of being stored for more than 3 months, the product should be sealed with Nitrogen gas. (2) After opening the package When soldering, this could result in a decrease of the photoelectric effect or light intensity. a. Soldering should be done right after mounting the product. b. Keep the temperature in the range from 5°C to 40°C and the humidity at less than 30%. Soldering should be done within 7 days after opening the desiccant package. If the product has been exposed for more than 7 days after opening the package or the indicating color of the desiccator changes, the product must be baked at a temperature between 60°C and 65°C for 10 to 12 hours. An unused and unsealed product should be r epacked in a desicc ant package and kept sealed in a dr y atmosphere. (3) Precautions for use Any external mechanical force or excessive vibration should not be applied to the product during cooling after soldering, and it is preferable to avoid rapid cooling. The product should not be mounted on a distorted part of PCB. Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and surge damage, and all devices and equipments must be grounded to the earth. (4) Miscellaneous Radiation resistance is not considered. When cleaning the pr oduct, any kind of fluid such as water, oil and or ganic solvent must not be used and IPA(Isopropyl Alcohol) must be used. When using the product, operating current should be settled in c onsideration of the maximum ambient temperature. Its appearance or specification for improvement is subject to change without notice. SEOUL SEMICONDUCTOR CO., LTD.
10 SSC-QP-7-03-44(갑)
-7-03-44(갑) Rev. 1.00 SFAF3L 10. Soldering Profile The LED can be soldered in place using the reflow soldering method. (1) Lead solder Preliminary heating to be at maximum 210°C for maximum 2 minutes. Soldering heat to be at maximum 240°C for maximum 10 seconds. 0 15 30 45 60 75 90 105 120 135 150 165 180 195 120 160 200 240 280 Soldering Times [sec] Device Surface Temperature [ o (2) Lead-f ree solder Preliminary heating to be at maximum 220°C for maximum 2 minutes. Soldering heat to be at maximum 260°C for maximum 10 seconds. 0 15 30 45 60 75 90 105 120 135 150 165 180 195 120 160 200 240 280 Device Surface Temperature [ o Soldering Times [sec] (3) Hand Soldering conditions Not more than 5 seconds @MAX 300°C, under Soldering iron. SEOUL SEMICONDUCTOR CO., LTD.
11 SSC-QP
Rev. 1.00 SFAF3L 11. Outline Dimension ( Tolerance : ±0.2, Unit : mm ) Recommended solder pad SEOUL SEMICONDUCTOR CO., LTD.
12 SSC-QP-7-03-44(갑)
0.4 1.1 0.3 1.65 0.5 1.0 0.5 0.8 0.8 7.00
Rev. 1.00 SFAF3L 13. Reel Packing Structure LOT NUMBER : XXXXXXXX SSC PART NUMBER : XXXXXXXX Material : Paper(SW3B(B)) SEOUL Semiconductor EcoLight 245 (mm) Acriche RoHS TUV 220 (mm) MADE IN KOREA TYPE 7inch 142 (mm) SIZE (mm) 245 220 245 220 a b 142 c Reel Barcode Label QUANTITY : XXXX RANK : Outer Box Structure XXX Humidity indicator Desiccant Aluminum Vinyl Bag SFAF3L Lot Number z The lot number is composed of the following characters; Symbol Meaning Example ○ Year 8 for 2008, 9 for 2009 ‥‥ □□ Month 01 for Jan., 02 for Feb., ‥‥ 12 for Dec. ◇◇◇ Number 001, 002, 003, 004, 005, 006, 007 ‥‥ SEOUL SEMICONDUCTOR CO., LTD.
13 SSC-QP-7-03-44(갑)
Rev. 1.00 SFAF3L 13. History Rev. No. Contents Date 1.00 - The institution of New Spec. 2008.06.03 Published by SEOUL SEMICONDUCTOR CO., LTD. http://www.seoulsemicon.com 148-29, Gasan-Dong, Geumcheon-Gu, Seoul, 153-801. South Korea © All Right Reserved. SEOUL SEMICONDUCTOR CO., LTD.