SDT450 SOLIDSTATE | Alldatasheet

Document overview

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Technical content

The SDT450 consists of a phototransistor optically coupled to a light emitting diode. Optical coupling between the input LED and output phototransistor allows for high isolation levels while maintaining low-level DC signal control capability. The SDT450 provides an optically isolated method of controlling many interface applications such as telecommunications, industrial control and instrumentation circuitry.

DESCRIPTION

OPTIONS/SUFFIXES* SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS* APPROVALS Ultra miniature 4-pin small outline package• High input-to-output isolation package (3,750 Vrms)• CTR Range: 50%-600%• Home Appliances• Office Automation Equipment• Vending Machines• Digital logic inputs• Power Supplies• Tape and Reel• -TR NOTE: Suffixes listed above are not included in marking on device for part number identification. PARAMETER UNIT MIN TYP MAX Storage Temperature °C -55 125 Operating Temperature °C -40 100 Input Forward Current mA 50 Input Peak Forwad Current A 1 Reverse Input Voltage V 6 Total Power Dissipation mW 170 *The values indicated are absolute stress ratings. Functional operation of the device is not implied at these or any conditions in excess of those defined in electrical characteristics section of this document. Exposure to Absolute Ratings may cause permanent damage to the device and may adversely affect reliability. + Input - Input Collector Emitter UL / C-UL Approved File #E201932• © 2007 Solid State Optronics • San José, CA Page 1 of 6 SDT450 rev 1.41 (04/27/2007)

ELECTRICAL CHARACTERISTICS - 25°C PARAMETER UNIT MIN TYP MAX TEST CONDITIONS INPUT SPECIFICATIONS Forward Voltage V 1.2 1.4 If = 20mA Reverse Current µ 10 Vr = 4VA Terminal Capacitance p 30 250 V = 0, f = 1KHzF OUTPUT SPECIFICATIONS Collector-Emitter Breakdown Voltage V 60 Ic = 10uA, If = 0 Emitter-Collector Breakdown Voltage V 5 If = 100uA, If = 0 Collector Dark Current µ 0.1 Vce = 20V, If = 0A Floating Capacitance p 0.6 1 V= 0V, f = 1.0 MHzF Vce Saturation Voltage V 0.1 0.3 If = 20mA, Ic = 1mA Current Transfer Ratio % 50 600 If = 5mA, Vce = 5V Rise Time µ 5 20 Ic= 2mA, Vce =2V, RL = 100ohmss Fall Time µ 4 20 Ic= 2mA, Vce = 2V, RL = 100 ohmss COUPLED SPECIFICATIONS Isolation Voltage V 3750 T = 1 minute Isolation Resistance G 50 DC500VΩ CTR CLASSIFICATION -A % 80 160 -B % 130 260 -C % 200 400 -D % 300 600 -E % 50 600 © 2007 Solid State Optronics • San José, CA Page 2 of 6 SDT450 rev 1.41 (04/27/2007)

Forward Current vs. Ambient Temperature N = 100, Ambient Temperature = 25°C SDT450 Diode Power Dissipation vs. Ambient Temperture N = 100, Ambient Temperature = 25°C SDT450 Collector Power Dissipation vs. Ambient Temperature N = 100 SDT450 Total Power Dissipation vs. Ambient Temperature N = 100 SDT45 0 Peak Forward Current vs. Duty Ratio N = 100, Ambient Temperature = 25°C © 2007 Solid State Optronics • San José, CA Page 3 of 6 SDT450 rev 1.41 (04/27/2007) SDT450 Forward Current vs. Forward Voltage N = 100, Ambient Temperature = 25°C Ambient temperature Ta (°C) Forward current IF (mA) Ambient temperature Ta (°C) Diode power dissipation P (mW) Ambient temperature Ta (°C) Collector power dissipation PC (mW) Ambient temperature Ta (°C) Total power dissipation PC (mW) Forward voltage VF (V) Forward current IF (mA) Duty ratio Peak forward current IFM (mA)

Current Transfer Ratio vs. Forward Current N = 100, Ambient Temperature = 25°C SDT450 Collector Current vs. Collector-Emitter Voltage N = 100, Ambient Temperature = 25°C SDT450 Relative Current Transfer Ratio vs. Ambient Temperature N = 100 SDT450 Collector-Emitter Saturation Voltage vs. Ambient Temperature N = 100 © 2007 Solid State Optronics • San José, CA Page 4 of 6 SDT450 rev 1.41 (04/27/2007) SDT450 Response Time vs. Load Resistance N = 100, Ambient Temperature = 25°C SDT450 Collector Dark Current vs. Ambient Temperature N = 100 Forward current IF (mA) Current transfer ratio CTR (%) Collector-emitter voltage VCE (V) Collector current Ic (mA) Ambient Temperature Ta (°C) Relative current transfer ratio (%) Ambient Temperature Ta (°C) Collector-emitter saturation voltage VCE (SAT) (V) Ambient Temperature Ta (°C) Collector dark current ICEO (A) Load resistance RL (K ohm) Response Time (us)

4 PIN SMALL OUTLINE PACKAGE

© 2007 Solid State Optronics • San José, CA Page 5 of 6 SDT450 rev 1.41 (04/27/2007) END VIEW TOP VIEW BACK VIEW .275” ± 0.015” (6.985 ± 0.4mm) .905” ± 0.005” (2.30 ± 0.05mm) .170” ± 0.010” (4.165 ± 0.3mm)

Solid State Optronics (SSO) makes no warranties or representations with regards to the completeness and accuracy of this document. SSO reserves the right to make changes to product description, specifications at any time without further notice. SSO shall not assume any liability arising out of the applicat ion or use of any product or circuit described herein. Neither ci rcuit patent licenses nor indemnity are expressed or implied. Except as specified in SSO's Standard Terms & Conditions, SSO disclaims liability for consequential or other damage, and we mak e no other warranty, expressed or implied, including merchantability and fitness for particular use. DISCLAIMER LIFE SUPPORT POLICY SSO does not authorize use of its devices in life support applications wherein failure or malfunction of a device may lead to personal injury or death. Users of SSO devices in life support applications assume all risks of su ch use and agree to indemnify SSO against any an d all damages resulting from such use. Life support devices are def ined as devices or systems which, (a) are intended for surgical im plant into the body, or (b) support or sustain life, and (c) whose failure to perf orm when used properly in accordance with instructions for u se can be reasonably expected to result in significant injury to the user, or (d) a critical component in any component of a life support device or system whose failure can be reasonably expected to c ause failure of the life support device or system, or to affect its safety or effe ctiveness. © 2007 Solid State Optronics • San José, CA Page 6 of 6 SDT450 rev 1.41 (04/27/2007 )