SDA-5000

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

■ DC to 35GHz Operation ■ +17dBm P3dB ■ Gain = 11.8dB Typical ■ Noise Figure = 4dB ■ Output Voltage to 8VPP ■ 100mA Total Current

Applications

■ Instrumentation ■ Military ■ Aerospace ■ Broadband ATE SDA-5000

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7 SDA-5000 Absolute Maximum Ratings Parameter Rating Unit Drain Bias Voltage (VDD) +8.0 VDC Gate Bias Voltage (VTI) -2 to +0 VDC Gate Bias Voltage (VG2) (VDD-8.0) VDC to VDD V RF Input Power (VDD = +8.0VDC) 15 dBm Operating Junction Temperature (TJ) +175 °C Continuous Power Dissipation (T = +85°C) 750 mW Thermal Resistance (Pad to Die Bottom) 116 °C/W Storage Temperature -40 to +150 °C Operating Temperature -40 to +85 °C ESD JESD22-A114 Human Body Model (HBM) Class 0 (All Pads) Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance TA = +25°C, VDD = +8VDC, VG2 = +1.5VDC, IDD = 100mA* Operating Frequency 0 35 GHz 3dB BW Gain 10.8 11.8 dB 20GHz IP3 25 dBm POUT 0dBm, 20GHz P1dB 15 dBm 20GHz P3dB 17.5 dBm 20GHz Noise Figure at Mid-Band 4 dB 20GHz Input Return Loss 16 dB Output Return Loss 15 Supply Current 100 mA Supply Voltage 6.5 VDC *Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD = 160mA typical., VG2 = 2.75VDC

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 7 SDA-5000 Typical Performance

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 7 SDA-5000 Typical Performance (Continued)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 7 SDA-5000 Application Schematic Die Drawing (Dimensions in millimeters) Notes: 1. No connection required for unlabeled bond pads 2. Die thickness is 0.102mm (4mil) 3. Typical bond pad is 0.100mm square 4. Backside metallization: gold 5. Backside metal is ground 6. Bond pad metallization: gold 7. Refer to drawing posted at www.rfmd.com for tolerances NOTE: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 7 SDA-5000 Pin Names and Descriptions Pin Name Description Interface Schematic

1 RFIN

RF Input. This pad is DC coupled and matched to 50Ω from DC to 35GHz. 50Ω microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output.

2 VG2

VG2 is an optional pad. It may be used to bias the cascode gate of the amplifier. If this port is used, a 1000pF bypass capacitor with the shortest wirebond length possible is recommended to prevent low frequency gain ripple.

3 VTO

The output drain termination pad. This pad requires a suggested 1000pF bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier.

4 RFOUT and

RF Output. 50Ω microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. Connect the DC bias (VDD) network to provide drain current (IDD). 5 VCAS Provides VG2 gate voltage to the cascode amplifier. The value is ~ (VCC/2 – absolute value of VTI). 6 VG21 Not connected.

7 VTI

Input gate voltage, used to bias the amplifier. The value is between -1.5VDC (device is pinched OFF) to +0.2VDC (fully ON). This pad requires a bypass capacitor to ground with the shortest possible wirebond length to prevent low frequency gain ripple. The value of the external capacitance limits the low frequency response of the amplifier. Die GND Ground connection. Connect die bottom directly to ground plane for best performance. NOTE: The die should be connected directly to the ground plane with conductive epoxy.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140210 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 7 SDA-5000 Assembly Diagram Measurement Technique All specifications and typical performances reported in this document were measured in the following manner. Data was taken using a temperature controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and integrate d circuit was made with a coplanar to microstrip ceramic test interface. The test interface was then wire bonded to the die as shown in the figure below using 1 mil diameter bondwires. The spacing between the test interface and the die was 200μm, and the bond wire loop height was 100μm. The thickness of the test interface is 125μm (5mil). The calibration of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment. Therefore, all data represents the integrated circuit and accompanying bond wires.