SD4100 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 80 mA 30 V BVCER IC = 120 mA R BE = 75 Ω 40 V BVEBO IE = 20 mA 3.5 V ICES VE = 28 V 10 mA hFE VCE = 5.0 V IC = 4.0 A 25 120 --- PG ηηηηC VCE = 28 V I CQ = 2 X 100 mA f = 860 MHz POUT = 100 W PREF = 25 W 8.5 dB NPN SILICON RF POWER TRANSISTOR SD4100 DESCRIPTION: The ASI SD4100 is a gold mettalized RF power transistor designed for high linearity Class-AB operation in UHF and band IV and V for TV transmitters. It utilizes emitter ballasting for high reliability and ruggedness. FEATURES:

  • Common Emitter, Class AB push-pull
  • PG = 8.5 dB at 100 W/860 MHz
  • Omnigold™ Metalization System
  • 28 V operations MAXIMUM RATINGS IC 16 A VCB 65 V VCE 30 V PDISS 220 W @TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.8 °C/W PACKAGE STYLE .450 BAL FLG(A) 1 = COLLECTOR 2 = BASE 3 = EMITTER MINIMUM inches / mm .455 / 11.56 B C D E F G A MAXIMUM .120 / 3.05 .465 / 11.81 inches / mm H DIM L M J K 1.095 / 27.81 .002 / 0.05 .080 . 2.03 1.105 / 28.07 .005 / 0.15 .095 / 2.41 P N .455 / 11.56 .195 / 4.95 .445 / 11.30 K J G H F C D E L M N P .060x45° B A FULL R .100x45° .130 / 3.30 .785 / 19.94 .055 / 1.40 .230 / 5.84 .525 / 13.34 .535 / 13.59 .838 / 21.28 .850 / 21.59 2 2