SD1006

SD1006 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 30 V BVCBO IC = 100 µA 50 V BVEBO IE = 100 µA 5.0 V ICEO VCE = 28 V 100 µA hFE VCE = 15 V IC = 50 mA 30 300 --- ft VCE = 15 V IC = 50 mA 1500 1800 MHz Cob VCB = 30 V f = 100 KHz 2.5 3.5 pF Cib VEB = 0.5 V f = 100 KHz 8.0 10 pF NFNB VCE = 10 V I C = 10 mA f = 2000 MHz 2.7 dB NFBB VCE = 15 V I C = 50 mA f = 216 MHz 7.0 8.0 dB GVE VCE = 15 V IC = 50 mA f = 216 MHz 7.2 6.8 dB XMOD VCE = 15 V IC = 50 mA Pout = +45 dbmV -60 -57 dB 2NDO VCE = 15 V IC = 50 mA Pout = +45 dbmV -60 -50 dB NPN SILICON HIGH FREQUENCY TRANSISTOR SD1006 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCEO 30 V VCBO 50 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 50 °C/W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR