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UV Enhanced Silicon Photodiode SD100-13-23-022 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page /2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD 100 -13-23-022 is UV enhanced silicon PIN photodiode assembled in a hermetic TO -5 metal package with the Cathode connected to the case.

  • Low Noise
  • High Speed
  • High Shunt Resistance
  • High Response RELIABILITY APPLICATIONS This Luna high-reliability detector is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
  • Instrumentation
  • Industrial
  • Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Ta = 23°C UNLESS OTHERWISE NOTED Reverse Voltage - - 50 V NON CONDENSING Operating Temperature -40 to +125 °C - Storage Temperature -55 to +150 °C - Soldering Temperature* - - +260 °C SEE RECOMMENDED REFLOW PROFILE

UV Enhanced Silicon Photodiode SD100-13-23-022 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page /2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Dark Current VR = 5V - 1 6.5 nA Shunt Resistance VR = 10 mV 35 - - MΩ Junction Capacitance VR = 0V, f = 1 MHz - 90 - pF VR = 50V, f = 1 MHz - 9 - Spectral Application Range Spot Scan 250 - 1100 nm Responsivity λ= 365nm V, VR =0V 0.10 0.18 - A/W Breakdown Voltage I = 10 µA 30 50 - V Noise Equivalent Power VR = 0V@ λ=Peak - 3x10-14 - W/ √ Hz Response Time RL = 50Ω, VR =0V - 190 - nS RL = 50Ω, VR =10V - 13 - TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.1 0.2 0.3 0.4 0.5 0.6 225 325 425 525 625 725 825 925 1025 1125 Responsivity,A/W Wavelenght, nm