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Solderable Planar Photodiode SLCD-61N5 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 1.0 0.8 0.6 0.4 100° 90° 80° 70° 60° 50° 40° 30° 20° 10° Half Angle = 60° Directional Sensitivity Characteristics 20° 40° 60° 80° 100° 120° 0.0 0.2 0.4 0.6 0.8 1.0 DESCRIPTION FEATURES This Silicon solderable planar photodiodes feature low cost, high reliability and linear short circuit current over a wide range of illumination. These devices are widely used for light sensing and power ge neration because of their stability and high efficiency. They are particularly suited to power conversion applications due to their low internal impedance, relatively high shunt im pedance, and stability. These devices also provide a reliable and inexpens ive detector for instrumentation and light beam sensing applications

  • Visible to IR spectral irradiance range
  • High reliability
  • Oxide passivation
  • Linear short circuit current
  • Low capacitance, high speed RELIABILITY APPLICATIONS This Luna high-reliability detector is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after p roper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial ABSOLUTE MAXIMUM RATINGS NOTE: Ee = light source@2854°K SYMBOL MIN MAX UNITS Operating Temperature -40 to +125 °C - Storage Temperature -40 to +125 °C - Soldering Temperature - - +260 °C - Cathode AnodeSensitive Area (93.6 sq.mm.) Dimensions in mm. (+/- 0.13) 0.4 10.2 10.2

Solderable Planar Photodiode SLCD-61N5 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Short Circuit Current VR = 0V, Ee = 25 mW/cm2 2.5 4.0 - mA Open Circuit Voltage Ee= 25mW/cm2 - 0.40 - V Reverse Dark Current VR = 5V, Ee = 0 - - 3.3 µA Reverse Breakdown Voltage IR = 100µA 20 - - V Maximum Sensitivity Wavelength - - 930 - nm Spectral Sensitivity λ = 940 nm - 0.55 - A/W Sensitivity Spectral Range - 400 - 1100 nm Junction Capacitance VR = 0V, Ee = 0, f=1MHz - 2.0 - nF Acceptance Half Angle (off center-line) - 60 - deg