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Solderable Silicon Photodiodes PDB-V617-2 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The PDB-V617-2 is a silicon red enhanced solderable photodiode designed for low noise and for photovoltaic applications.

  • Red enhanced
  • Photovoltaic
  • High quantum efficiency RELIABILITY APPLICATIONS Contact Luna Optoelectronics for recommendations on specific test conditions and procedures.
  • Optical encoder
  • Position sensor
  • Industrial controls
  • Instrumentation ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 25 V Ta = 23°C unless otherwise noted Storage Temperature -40 - 125 °C - Operating Temperature -40 to +100 °C - Soldering Temperature* - - +224 °C - * 1/16 inch from case for 3 seconds max.

Solderable Silicon Photodiodes PDB-V617-2 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Short Circuit Current H= 100 fc, 2850 K 615 640 - µA Dark Current VR =5 V - 35 75 nA Shunt Resistance VR = 10 mV 6.5 13.5 - MΩ Junction Capacitance VR =0V; f = 1 MHz - 8500 - pF Spectral Application Range Spot Scan 350 - 1100 nm Breakdown Voltage I=10 µA 5 15 - V Noise Equivalent Power VR =0V@λ= Peak - 2.2x10-13 - W/√ Hz Response Time RL = 1KΩ,VR = 0 V - 2500 - nS Response time of 10% to 90% is specified at 660nm wavelength light. TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150Wavelength (nm) Responsivity (A/W)