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Red Enhanced Silicon Photodiode SD100-11-21-221 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD 100-11-21-221 is a general purpose silicon PIN photodiode, red enhanced, packaged in a leaded hermetic TO-5 metal package.
- Low Noise
- Red Enhanced
- High Shunt Resistance
- High Response RELIABILITY APPLICATIONS Contact Luna for recommendations on specific test conditions and procedures.
- Instrumentation
- Industrial
- Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 75 V Ta = 23°C UNLESS OTHERWISE NOTED Storage Temperature -55 to +150 °C - Operating Temperature -40 to +125 °C - Soldering Temperature* - - +240 °C - * 1/16 inch from case for 3 seconds max. PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] TO-5 PACKAGE ACTIVE AREA
1 ANODE
2 CASE GROUND
3 CATHODE
Ø.100 [Ø2.54] .118 [3.00] SQUARE 45° Ø.200 [5.08] PIN CIRCLE 3X Ø.018 [0.46] 3X .500 [12.7] MIN .157 [3.99] .169 [4.29] .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE 90° VIEWING ANGLE Ø.256 [6.50] Ø.264 [6.70] Ø .362 [9.19] Ø .357 [9.07] Ø.320 [8.13] Ø.330 [8.38] .090 [2.29]
Red Enhanced Silicon Photodiode SD100-11-21-221 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS OTHERWISE NOTED PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Dark Current VR = 5V - 1.6 6.4 nA Shunt Resistance VR = 10 mV 300 - - MΩ Junction Capacitance VR = 0V, f = 1 MHz - 87 - pF VR = 10V, f = 1 MHz - 18 - Spectral Application Range Spot Scan 350 - 1100 nm Responsivity λ= 633 nm, VR = 0V 0.32 0.36 - A/W λ= 900 nm, VR = 0V 0.50 0.55 - Breakdown Voltage I = 10 µA - 50 - V Noise Equivalent Power VR = 5V @ λ=950nm - 4.0x10-14 - W/ √ Hz Response Time RL = 50 Ω,VR = 0 V - 190 - nS RL = 50 Ω,VR = 10 V - 13 - Response time of 10% to 90% is specified at 660nm wavelength light. TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 Wavelength (nm) Responsivity (A/W)