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Red Enhanced Silicon Photodiode SD057-11-21-011 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD 057-11-21-011 is a general purpose silicon PIN photodiode, red enhanced, packaged in a leaded hermetic TO-46 metal package.
- Low Noise
- Red enhanced
- High shunt resistance
- High response RELIABILITY APPLICATIONS This Luna high-reliability device is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
- Industrial Switching
- Medical
- Military ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 75 V Ta = 23°C unless noted otherwise Storage Temperature - - +150 °C - Operating Temperature -40 to +125 °C - Soldering Temperature* - - +240 °C - * 1/16 inch from case for 3 seconds max .060 [1.52] SQUARE PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .051 [1.30] SQUARE ACTIVE AREA .100 [2.54] 2X Ø.018 [0.46]ANODE CATHODE Ø .210 [5.33] VIEWING 2X .500 [12.7] MIN TO-46 PACKAGE 45° 51° .145 [3.68] .160 [4.06] Ø .152 [3.86] ANGLE Ø .156 [3.96] Ø.181 [4.60] Ø.187 [4.75]
Red Enhanced Silicon Photodiode SD057-11-21-011 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Dark Current VR = 5V - 0.5 2.0 nA Shunt Resistance VR = 10 mV 800 - - MΩ Junction Capacitance VR = 0V, f = 1 MHz - 28 - pF Junction Capacitance VR = 10V, f = 1 MHz - 6 - pF Spectral Application Range Spot Scan 350 - 1100 nm Responsivity λ= 633nm, VR = 0 V 0.32 0.36 - A/W Responsivity λ= 900nm, VR =0 V 0.50 0.55 - A/W Breakdown Voltage I = 10 µA - 50 - V Noise Equivalent Power VR = 5V @ λ=950nm - 2.8x10-14 - W/ √ Hz Rise Time (50Ω load) Vbias = 5V; λ= 1310 nm - 1.2 - ns Response Time RL = 50 Ω,VR = 0 V - 190 - nsec Response Time RL = 50 Ω,VR = 0 V - 13 - nsec Response time of 10% to 90% is specified at 660nm wavelength light. TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.1 0.2 0.3 0.4 0.5 0.6 0.7 300 400 500 600 700 800 900 1000 1100 Responsivity,A/W Wavelenght, nm