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Surface-Mount Photodiode Assembly SD040-111-411 WWW.LUNAINC.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. Howeve r, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 09-15-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD040-111-411 is a high sensitivity, low noise silicon PIN photodiode with 0.79mm² active area, mounted in a 1206 package.  Small Footprint  Low Capacitance  High Speed RELIABILITY APPLICATIONS Contact Luna Optoelectronics for recommendations on specific test conditions and procedures.  Industrial Sensors  Light Management  Handheld Devices ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 50 V T a = 23°C UNLESS OTHERWISE NOTED Storage Temperature -50 - +125 °C - Operating Temperature -40 to +105 °C - Soldering Temperature - - +260 °C -

Surface-Mount Photodiode Assembly SD040-111-411 WWW.LUNAINC.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. Howeve r, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 09-15-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage I f=10 mA 0.5 0.8 1.3 V Light Current (2856K) V R = 5V; H = 1000 lux - 9.0 - µA Breakdown Voltage I=100 µA 50 - - V Shunt Resistance V bias = 10 mV - 1.0 - G Ω Dark Current V R = 10 V - - 0.5 nA Junction Capacitance V R =5V; f = 1000 kHz - 20 - pF TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.1 0.2 0.3 0.4 0.5 0.6 250 450 650 850 1050 Responsivity,A/W Wavelenght, nm