SD039-151-011 LUNA | Alldatasheet

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PRELIMINARY SD039 -151-011 WWW. LUNAINC .COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD039 -151-011 is a high sensitivity, low noise, 1 mm diameter active area InGaAs photodiode (chip dimensions 1.36mmx1.36mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. Photodetector assembled in a TO-46 package.

  • Low Noise
  • High Sensitivity
  • Detector at AWIR and NIR RELIABILITY APPLICATIONS This Luna high-reliability device is in principle able to meet military test requirements (Mil-STD -750, Mil-STD -883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial Sensing
  • Security and Defense
  • Communication
  • Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Ta = 23°C non condensing 1/16 inch from case for 3 seconds max Reverse Voltage - - 40 V - Operating Temperature 40 to + 100 °C - Storage Temperature -55 to +125 °C - Soldering Temperature - - +260 °C - Wavelength Range 400 to 1 00 nm -

PRELIMINARY SD039 -151-011 WWW. LUNAINC .COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO -ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 µA 20 - 40 V Spectral Range − 800 - 1700 nm Responsivity λ= 1310 nm, Vr=5V 0.8 0.9 - A/W Shunt Resistance Vbias = 10 mV 40 200 - M Ω Dark Current V bias = 5V - 0.2 10 nA Capacitance V bias = 5V; f = 1 MHz - 70 150 pF Rise Time (50Ω load) Vbias = 5V; λ= 1310 nm - 2.0 - ns Noise Equivalent Power VR = 5V@ λ=1310 - 1.0x10-14- - fW/√Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs REVERSE BIAS SPECTRAL RESPONSE CAPACITANCE vs. REVERSE BIAS 1.E-15 1.E-14 1.E-13 1.E-12 Noise Current (A/rt_Hz) Reverse Voltage (V) 1.E-12 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 Reverse Dark Current [A] Reverse Voltage [V] 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 680 880 1080 1280 1480 1680 Responsivity,A/W Wavelenght, nm 105 125 145 165 0 5 10 15 20 Capacitance [pF] Reverse Bias [V]