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WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 02-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD039-121-011 is a high sensitivity, low capacitance and noise, 1mm diameter active area InGaAs photodiode, sensitive to wavelengths in visible extended (450-1700nm) spectral range and used for imaging and sensing applicati ons. The photodetector is assembled in a TO -46 package.
- Low Noise
- Low Dark Current and Capacitance
- High Sensitivity
- Detection in LWIR RELIABILITY APPLICATIONS This high-reliability d evice is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after p roper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
- Industrial Sensing
- Security and Defense
- Communication
- Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Operating Temperature 0 to +85 °C Ta = 23°C non condensing Storage Temperature -25 to +85 °C Soldering Temperature +260 °C > 2mm from case for < 5 sec Wavelength Range 450 to 1700 nm Reverse Voltage 20 V SCHEMATIC C L C L (.500) (.100) (.184) CATHODE ANODE PACKAGE DIMENSIONS (INCH) (.210)
WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 02-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 100 µA 10 - - V Responsivity λ= 500 nm - - - A/W Shunt Resistance Vbias = 10 mV TBD - - MΩ Dark Current Vbias = 5V - - 100 nA Capacitance Vbias = 0V; f = 1 MHz - 180 - pF Rise Time (50Ω load) Vbias = 24V; λ= 826 nm - TBD ns Noise Equivalent Power λ= 900 nm - 10 10-14W/Hz0.5 Temperature Coefficient of Shunt Resistance TBD TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 450 650 850 1050 1250 1450 1650 Responsivity,A/W Wavelenght, nm