DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Surface-Mount Photodiode Assembly SD019-111-411 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD 019-111-411 is a silicon PIN 0.18mm² active area photodiode, assembled in a 0805 SMT package.

  • Small Footprint
  • Low Capacitance
  • High Speed RELIABILITY APPLICATIONS Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial Sensors
  • Light Management
  • Handheld Devices ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 50 V Ta = 23°C UNLESS OTHERWISE NOTED Storage Temperature -50 - 125 °C - Operating Temperature -40 to +105 °C - Soldering Temperature* - - +260 °C - * 1/16 inch from case for 3 seconds max.

Surface-Mount Photodiode Assembly SD019-111-411 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage If=10 mA 0.5 0.8 1.3 V Light Current (2856K) VR = 5V; H = 1000 lux - 3.2 - µA Breakdown Voltage IR = 100 µA 0.550 - - V Shunt Resistance V bias = 10 mV - 2.0 - GΩ Dark Current VR = 10 V - - 0.5 nA Junction Capacitance VR = 5V; f = 1000 kHz - 6.0 - pF Rise Time VR = 3V; Ri= 1000Ω - 1.0 - µS TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 250 450 650 850 1050 Responsivity,A/W Wavelenght, nm