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Surface Mount InGaAs Photodetector SD012-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD012-151-001 is a high sensitivity, low noise, 0.3 mm diameter active area InGaAs photodiode (chip dimensions 0.44mm x 0.44mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. The photodetector is assembled in a 1206 package.

  • Low Noise
  • High Sensitivity
  • Detection at SWIR and NIR RELIABILITY APPLICATIONS This Luna high-reliability device is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial Sensing
  • Security and Defense
  • Communication
  • Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 40 V Ta = 23°C UNLESS NOTED OTHERWISE Operating Temperature -40 to +125 °C - Storage Temperature -55 to +100 °C - Soldering Temperature - - +260 °C - Wavelength Range 400 to 1100 nm - Image shown is a representation

Surface Mount InGaAs Photodetector SD012-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 µA - 50 - V Responsivity λ= 1310 nm, Vr=5V 0.80 0.90 - A/W Shunt Resistance Vbias = 10 mV 0.2 1.0 - GΩ Dark Current Vbias = 5V - 5.0 10.0 nA Capacitance Vbias = 5V; f = 1.0 MHz - 1.6 - pF Rise Time (50Ω load) Vbias = 5V; λ= 1310 nm - 1.2 - ns Spectral Range - 800 - 1700 nm Noise Equivalent Power Vr= 5V@ λ=1310 - 4.0x10-15 - W/Hz1/2 TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs REVERSE BIAS SPECTRAL RESPONSE DARK CURRENT vs REVERSE BIAS 1.E-15 1.E-14 1.E-13 1.E-12 Noise Current (A/rt_Hz) Reverse Voltage (V) Noise current @ 23C 1.E-13 1.E-11 1.E-09 1.E-07 1.E-05 Reverse Dark Current [A] Reverse Voltage [V] Reverse dark current @ 23 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 600 800 1000 1200 1400 1600 1800 Responsivity [A/W] Wavelength [nm] Typical Responsivity 0 5 10 15 20 Capacitance [pF] Reverse Bias [V] Typical Capacitance at 1 MHz