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Surface Mount InGaAs Photodetector SD004-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no respons ibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 CHIP DIMENSIONS, µm 1206 PACKAGE DIMENSIONS, mm[inch] DESCRIPTION FEATURES The SD004-151-001 is a high sensitivity, low noise, 0.079 mm 2 diameter active area InGaAs photodiode sensitive to wav elengths over a standard InGaAs (800-1700nm) spectr al range and used for imaging and sensing applications. The photodetector is assembled in a 1206 package.

  • Low Noise
  • Low Dark Current and Capacitance
  • High Sensitivity
  • Detection in LWIR RELIABILITY APPLICATIONS This Luna high-reliability de vice is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial Sensing
  • Security and Defense
  • Communication
  • Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 40 V Ta = 23°C UNLESS NOTED OTHERWISE Operating Temperature 40 to +125 °C - Storage Temperature -55 to +100 °C - Soldering Temperature - - +260 °C - Wavelength Range 800 to 1700 nm -

Surface Mount InGaAs Photodetector SD004-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no respons ibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 µA - 50 - V Responsivity λ= 1310 nm, Vr=5V 0.9 1.0 - A/W Shunt Resistance Vbias = 10 mV 0.2 1.0 - GΩ Dark Current Vbias = 5V - - 1.0 nA Capacitance Vbias = 5V; f = 1.0 MHz - .75 1.0 pF Rise Time (50Ω load) Vbias = 5V; λ= 1310 nm - 1.2 - ns Spectral Range 800 - 1700 nm Noise Equivalent Power Vr= 5V@ λ=1310 - 4.0x10-15 - W/Hz1/2 TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 680 880 1080 1280 1480 1680 Responsivity,A/W Wavelenght, nm