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Surface Mount InGaAS Photodetector SD002-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/3 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The SD002 -151-001 is a h igh sensitivity, low noise, 0.05 mm diameter active area InGaAs photodiode sensitive to wavelengths over a standard InGaAs (800-1700nm) spectral range and used for imaging and sensing applications. The photodetector is assembled in a 1206 package.

  • Low Noise
  • Low Dark Current and Capacitance
  • High Sensitivity
  • Detection in NIR and SWIR RELIABILITY APPLICATIONS Contact Luna for recommendations on specific test conditions and procedures.
  • Industrial Sensing
  • Security
  • Communication
  • Medical ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 40 V Ta = 23°C UNLESS NOTED OTHERWISE Operating Temperature -40 to +125 °C - Storage Temperature -55 to +100 °C - Soldering Temperature - - +260 °C - Wavelength Range 800 to 1700 nm -

Surface Mount InGaAS Photodetector SD002-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/3 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 µA - 50 - V Responsivity λ= 1300 nm, VR = 5V 0.80 1.0 - A/W Shunt Resistance Vbias = 10 mV 0.2 1.0 - GΩ Dark Current Vbias = 5V - 0.75 1.0 nA Capacitance Vbias = 5V; f = 1.0 MHz - 10 - pF Rise Time (50Ω load) Vbias = 5V; λ= 1310 nm - 1.2 - ns Spectral Range − 800 - 1700 Nm Noise Equivalent Power VR = 5V @ λ = 1310 - 4.0x10-15 - W/Hz1/2 TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 680 880 1080 1280 1480 1680 Responsivity,A/W Wavelenght, nm

Surface Mount InGaAS Photodetector SD002-151-001 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 3/3 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 <figure height 2.2”> REFLOW PROFILE APPLICATION CIRCUIT REFLOW PROFILE APPLICATION CIRCUIT 0 5 10 15 20 25 Capacitance [pF] Reverse Bias [V] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 Noise Voltage [Vrms/Hz1/2] Frequency [kHz] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 Noise Voltage [Vrms/Hz1/2] Frequency [kHz] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 Noise Voltage [Vrms/Hz1/2] Frequency [kHz] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 Noise Voltage [Vrms/Hz1/2] Frequency [kHz]