SC010NG DOINGTER | Alldatasheet
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www.doingter.cn — 1 — SC010NG Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=11A,RDS(ON)<10mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra low RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TA=25℃ )1 11 A Drain Current – Continuous (TA=100℃ ) 1 7 IDM Drain Current – Pulsed2 36 EAS 24.2 mj IAS 22 A PD Power Dissipation (TA=25℃ )4 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 25 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 85 G D D D D S S S Single Pulse Avalanche Energy3 Avalanche Current A ll data sheet.com
www.doingter.cn — 2 — SC010NG Package Marking and Ordering Information： Part NO. Marking Package SC010NG C010N SOP-8 Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.5 2.5 V RDS(ON) Static Drain-Source On Resistance2 VGS=10V,ID=8A --- 9 10 mΩ VGS=4.5V,ID=6A 12 18 GFS Forward Transconductance VDS=5V, ID=8A --- 24 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 940 1316 pF Coss Output Capacitance --- 131 183 Crss Reverse Transfer Capacitance --- 109 153 Switching Characteristics td(on) Turn-On Delay Time VDS=15V, , RGEN=1.5Ω, VGS=10V ID=8A --- 4.2 8.4 ns tr Rise Time --- 8.2 15 ns td(off) Turn-Off Delay Time --- 31 62 ns tf Fall Time --- 4 8 ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=8A --- 9.63 13.5 nC Qgs Gate-Source Charge --- 3.88 5.4 nC Qgd Gate-Drain “Miller” Charge --- 3.44 4.8 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,TJ=25℃ --- --- 1 V --- A ll data sheet.com
ww.doingter.cn — 3 SC010NG IS Continuous Source Current1.5 --- --- 9 A Trr Body Diode Reverse Recovery Time --- 8 --- Ns Qrr Body Diode Reverse Recovery Charge --- 2.9 --- Nc Notes: Typical Characteristics： ISM Pulsed Source Current2,5 VG=VD=0V , Force Current --- --- IF=8A , dI/dt=100A/µs , TJ=25℃ 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0 .5 1 1 .5 2 2 .5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS= 10V VGS= VGS= VGS= 4.5V VGS= 2 4 6 8 10 VGS (V) RD SON (mΩ) ID= 0 0 .3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ= 150℃ TJ=25℃ 7.5 0 5 10 15 20 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID= VDS= 15V Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ SD F ig.3 Forward Characteristics of Reverse A ll data sheet.com
www.doingter.cn — 4 — SC010NG 50 0 50 100 150 TJ ,Junction Temperature ( ℃) N ormalized VG S(th) 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) N ormalized On Resistance F ig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) C apacitance (pF) F =1.0MHz C iss C oss C rss .01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID ( TA= 25oC Single Pulse 00ms 100us ms 0ms DC .001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) N ormalized Thermal Response (RθJA) .01 .05 D UTY=0.5 S INGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance A ll data sheet.com