SBHUF2S0E

SBHUF2S0E SEOUL | Alldatasheet

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Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED SPECIFICATION [SBHUF2S0E] Seoul semiconductor Customer Drawn by Checked by Approved by Approved by

SBHUF2S0E –TopView LED Product Data Sheet Product Brief

Description

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com2 Edge type Application Top View LED SBHUF2S0E

• 2-chip in one package
• SMT solderability
• Own patent reserved
• RoHS Compliant
• Low Thermal Resistance
• Pb-free Reflow Soldering application
• SBHUF2S0E is very useful Top View LED in back light unit application
• 7.0mm x 2.0mm x 0.7mm
• White colored SMT package
• Flat Backlighting (LCD, Display)
• MNT, TV etc.
• Coupling into Light Guide Panel
• AV systems RoHS

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Table of Contents Index

• Product Brief
• Table of Contents
• Performance Characteristics
• Characteristic Diagram
• Reliability Test
• Color Bin Structure
• Mechanical Dimension
• Material Structure
• Packaging Information
• Reflow Soldering Characteristics
• Handling of Silicone Resin for LEDs
• Precaution For Use
• Company Information

Table 2. Electro Optical Characteristics (Ta = 25ºC) with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. (3) The luminous Flux is calculated by LG display CIE y. (4) 21/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. Table 1. Absolute Maximum Ratings (Ta = 25ºC)

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Characteristic Diagram Product Data Sheet Fig 1. Color Spectrum, Ta = 25℃, IF = 80mA, RH30% Fig 2. Radiant pattern, Ta = 25℃ 400 500 600 700 800 Ta = 25 O C Normalized Intensity [a.u.] Wavelength [nm] -100 -80 -60 -40 -20 0 20 40 60 80 1000.0 0.5

1.0 Ta = 25

O C x axis y axis Relative Intensity [a.u.] Radiation angle [deg.]

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Characteristic Diagram Product Data Sheet Fig 3. Forward Voltage vs. Forward Current , Ta = 25℃ Fig 4. Forward Current vs. Relative Luminous Flux, Ta = 25℃ 100 120 140 160 180 200 220 240 Ta = 25 O C Forward Current [mA] Forward Voltage [V] 0 40 80 120 160 200 2400 120 160 200

240 Ta = 25

O C Relative Luminous Intensity [%] Forward Current [mA]

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Characteristic Diagram Product Data Sheet Fig 5. Forward Current vs. CIE X, Y Shift, Ta = 25℃ Fig 6. Color Coordinate vs. Ambient Temperature, IF =160mA 0.240 0.245 0.250 0.255 0.260 O C O C O C O C -30 O C IF = 80 mA Color coordinate y Color coordinate x 0.242 0.243 0.244 0.245 0.246 0.247 0.248 0.249 0.250 240 mA 160 mA 80 mA 40 mA 20 mA 5 mA Ta = 25 O C Color coordinate y Color coordinate x

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Characteristic Diagram Product Data Sheet Fig 7. Forward Voltage vs. Ambient Temperature, IF =160mA Fig 8. Relative Luminosity vs. Ambient Temperature, IF =160mA Forward Current vs. Ambient Temperature -40 -20 0 20 40 60 80 1000.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 IF = 80 mA VF / VF @25 O C [a.u.] Ambient Temprature [ o -40 -20 0 20 40 60 80 1000.85 0.90 0.95 1.00 1.05 1.10 1.15 IF = 80 mA IV / IV @25 O C [a.u.] Ambient Temprature [ o

Table 3. TEST ITEMS and RESULTS Table 4. Criteria for Judging the Damage

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Color Bin Structure CIE Chromaticity Diagram RANK x1 y1 x2 y2 x3 y3 x4 y4 U3 0.2435 0.2009 0.2474 0.2081 0.2517 0.2033 0.2478 0.1961 V3 0.2474 0.2081 0.2514 0.2153 0.2557 0.2105 0.2517 0.2033 W3 0.2514 0.2153 0.2553 0.2225 0.2596 0.2177 0.2557 0.2105 X3 0.2553 0.2225 0.2593 0.2297 0.2636 0.2249 0.2596 0.2177 Y3 0.2593 0.2297 0.2632 0.2368 0.2675 0.2321 0.2636 0.2249 Z3 0.2632 0.2368 0.2671 0.2440 0.2714 0.2392 0.2675 0.2321 A3 0.2671 0.2440 0.2711 0.2512 0.2754 0.2464 0.2714 0.2392 B3 0.2711 0.2512 0.2750 0.2584 0.2793 0.2536 0.2754 0.2464 U4 0.2478 0.1961 0.2517 0.2033 0.2560 0.1985 0.2521 0.1913 V4 0.2517 0.2033 0.2557 0.2105 0.2600 0.2057 0.2560 0.1985 W4 0.2557 0.2105 0.2596 0.2177 0.2639 0.2129 0.2600 0.2057 X4 0.2596 0.2177 0.2636 0.2249 0.2679 0.2201 0.2639 0.2129 * Measurement Uncertainty of the Color Coordinates is ±0.007 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 Color Coordinate X Color Coordinate Y V W U B A Z Y X RANK x1 y1 x2 y2 x3 y3 x4 y4 Y4 0.2636 0.2249 0.2675 0.2321 0.2718 0.2273 0.2679 0.2201 Z4 0.2675 0.2321 0.2714 0.2392 0.2757 0.2344 0.2718 0.2273 A4 0.2714 0.2392 0.2754 0.2464 0.2797 0.2416 0.2757 0.2344 B4 0.2754 0.2464 0.2793 0.2536 0.2836 0.2488 0.2797 0.2416 U5 0.2521 0.1913 0.2560 0.1985 0.2603 0.1937 0.2564 0.1865 V5 0.2560 0.1985 0.2600 0.2057 0.2643 0.2009 0.2603 0.1937 W5 0.2600 0.2057 0.2639 0.2129 0.2682 0.2081 0.2643 0.2009 X5 0.2639 0.2129 0.2679 0.2201 0.2722 0.2153 0.2682 0.2081 Y5 0.2679 0.2201 0.2718 0.2273 0.2761 0.2225 0.2722 0.2153 Z5 0.2718 0.2273 0.2757 0.2344 0.2800 0.2296 0.2761 0.2225 A5 0.2757 0.2344 0.2797 0.2416 0.2840 0.2368 0.2800 0.2296 B5 0.2797 0.2416 0.2836 0.2488 0.2879 0.2440 0.2840 0.2368

Table 5. Bin Code description

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Mechanical Dimensions ( Tolerance: ±0.1, Unit: mm ) PKG Outline dimension

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Mechanical Dimensions LED PKG Silicone Depth Spec. (1) Silicone Depth (T) : 30um > T > 150um at 25℃ (2) Wire is not exposure over the encapsulation. Silicone Depth (T) = A ~ B A : The top of mold B : Encapsulation face (the center of PKG) Molding depth

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Material Structure ②③ ④ ⑤ ⑥⑦ No. LIST MATERIAL ① FRAME COPPER FRAME (SILVER PLATED) ② LED CHIP GaN ON SAPPHIRE ③ WIRE GOLD WIRE ④ ENCAPSULATION SILICONE ⑤ PHOSPHOR NITRIDE YELLOW NITRIDE RED ⑥ PACKAGE HEAT-RESISTANT POLYMER ⑦ ZENER DIODE Si

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Emitter Tape & Reel Packaging (1) Quantity : 3500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape (4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package 1) Reel & Carrier 12.0± 0.02 4 .0± 0.1 2 .0± 0.05 4 .0± 0.1 ( Tolerance: ±0.2, Unit: mm )

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box

Table 4. Part Numbering System : X1X2X3 - X4X5 - X6X7 - X8X9

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Reflow Soldering Characteristics (3) Hand Soldering conditions Not more than 3 seconds @MAX 350C, under Soldering iron. In case that the soldered products are reused in soldering process, we don’t guarantee the products. Lead Free Solder Pre-heat 150~200℃ Pre-heat time 120 sec. Max. Peak-Temperature 260℃ Max. Soldering time Condition 10 sec. Max. Lead Solder 2.5~5 C / sec.o o o Pre-heating 120~150 C 120sec. Max. 60sec. Max. Above 200 C o240 C Max. 10 sec. Max. 2.5~5 C / sec. 260 C Max. 10 sec. Max. o 60sec. Max. Above 220 C 120sec. Max. Pre-heating 150~200 C1~5 C / sec. ooo o1~5 C / sec. Lead-frame Solder (1) Lead Solder (2) Lead-Free Solder Lead Free Solder Pre-heat 120~150℃ Pre-heat time 120 sec. Max. Peak-Temperature 240℃ Max. Soldering time Condition 10 sec. Max.

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Precaution for Use Product Data Sheet (1) Storage conditions Keep the product in a dry box or a desiccator with a desiccant in order to prevent moisture absorption. a. Keep it at a temperature in the range from 5C to 30C and at a humidity of less than 50% RH. The product should be kept within a year. (2) After opening the package . When soldering, this could result in a decrease of the photoelectric effect or light intensity. a. Soldering should be done right after mounting the product. b. Keep the temperature in the range from 5C to 30C and the humidity at less than 60%. Soldering should be done within 7 days after opening the desiccant package. If the product has been exposed for more than 7 days after opening the package or the indicating color of the desiccator changes, the product must be baked at a temperature between 65 ±5C for less than 24 hours. An unused and unsealed product should be repacked in a desiccant package and kept sealed in a dry atmosphere. Stored at a humidity of less than 10% RH. (3) Precautions for use Any external mechanical force or excessive vibration should not be applied to the product during cooling after soldering, and it is preferable to avoid rapid cooling. The product should not be mounted on a distorted part of PCB. Gloves or wrist bands for ESD(Electric Static Discharge) should be wore in order to prevent ESD and surge damage, and all devices and equipments must be grounded to the earth. (4) Miscellaneous Radiation resistance is not considered. When cleaning the product, any kind of fluid such as water, oil and organic solvent must not be used and IPA(Isopropyl Alcohol) must be used. When using the product, operating current should be settled in consideration of the maximum ambient temperature. Its appearance or specification for improvement is subject to change without notice.

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Precaution for Use (5) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment)

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device

Rev 0.01, Jan 14, 2019 www.seoulsemicon.com Product Data Sheet SBHUF2S0E –TopView LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice.