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Features

Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS SBF4089Z DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- nology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodu lation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. S-Parameters vs Frequency +25c 11.5 12.5 13.5 14.5 15.5 0 100 200 300 400 500 600 700 800 900 Freq Gain(dB) -25 -20 -15 -10 IRL,ORL(dB) s2 1 s1 1 s2 2  IP3=42dBm at 2 40MHz  Stable Gain Over Temperature  Robust 1000V ESD, Class 1C  Operates From Single Supply  Low Thermal Resistance

Applications

 Receiver IF Amplifier  Cellular, PCS, GSM, UMTS  PA Driver Amplifier  Wireless Data, Satellite Terminals DS111011 Package: SOT-89 SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 14.9 dB 70MHz 13.3 14.8 16.3 dB 240MHz 13.2 14.7 16.2 dB 500MHz Output Power at 1dB Compression 20.1 dBm 70MHz 20.1 dBm 240MHz 18.4 19.9 dBm 400MHz Output Third Order Intercept Point 40.0 dBm 70MHz 42.0 dBm 240MHz 39.0 41.0 dBm 400MHz Input Return Loss 13.0 17.0 dB 500MHz Output Return Loss 12.0 16.0 dB 500MHz Noise Figure 3.3 4.3 dB 500MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 82 90 98 mA Thermal Resistance 43 °C/W junction to lead Test Conditions: V S=8V , ID=90mA T yp., TL=25°C. OIP3 Tone Spacing=1MHz, P OUT per tone=0dBm, R BIAS=33 . Data with Application Circuit.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Typical RF Performance at Key Operating Frequencies Absolute Maximum Ratings Parameter Rating Unit Device Current (ID)1 5 0 m A Device Voltage (VD)6 V Max Operating Dissipated Power 0.8 W Max Input Power Rating 15 dBm Junction Temp (TJ)+ 1 5 0 ° C Operating Temp Range (TL) -40 to +85 °C Storage Temp +150 °C ESD Rating - Human Body Model (HBM) Class 1C Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l and TL=TLEAD Parameter Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz Input Return Loss dB 18 22 22 21 21 19 Output Return Loss dB 15 16 17 19 21 18 R e v e r s e I s o l a t i o n d B 1 81 81 81 81 81 8 Test Conditions: VS=8V , ID=90mA T yp., OIP3 Tone Spacing=1MHz, P OUT per tone=0dBm. T L=25°C, RBIAS=33 , ZS=ZL=50 , App circuit. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z P1dB vs Temp 17.5 18.5 19.5 20.5 50 250 450 650 850 Frequency(MHz) Output Power (dBm) +25c -40c +85c TOIP vs Temp 50 250 450 650 850 Frequency(MHz) TOIP (dB) +25c -40c +85c Noise Figure vs Temp 0.5 1.5 2.5 3.5 4.5 50 250 450 650 850 Frequency(MHz) NF (dB) +25c -40c +85c

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Test Conditions: VS=8V , RBIAS=33 , ID=90mA, T=+25°C , Note: Output Return Loss can be improved at low end of band with L1 selection. Bias sweep vs Temp 100 01 234 5678 Source Voltage (V) Current (mA) +25c -40c +85c -16 -14 -12 -10 +25c -40c +85c -24 -22 -20 -18 0 100 200 300 400 500 600 700 800 900 S11 (dB) Frequency(MHz) S vs. Frequency11 14.7 14.8 14.9 15.1 +25c -40c +85c 14.1 14.2 14.3 14.4 14.5 14.6 Gain (d 0 200 400 600 800 1000 Frequency(MHz) S vs. Frequency21 -16 -14 -12 (dB) +25c -40c +85c -24 -22 -20 -18 0 100 200 300 400 500 600 700 800 900 Return Loss( Frequency(MHz) S vs. Frequency22 -17.5 -17 -16.5 -16 +25c -40c +85c -20 -19.5 -19 -18.5 -18 0 100 200 300 400 500 600 700 800 900 S12(dB) Frequency(MHz) S vs. Frequency12

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Application Circuit Schematic Application Circuit Element Values Recommended Bias Resistance for ID=90mA Reference Designator 70MHz 100MHz 240MHz 500MHz 850MHz C5, C6 1uF 1000pF 1000pF 220pF 100pF C 4 1 0 0 p F1 0 0 p F1 0 0 p F1 0 0 p F 6 8 p F L1 6.8uH 1.2uH 1.2uH 68nH 33nH L2 6.8nH 12nH 12nH 6.8nH 6.8nH Supply Voltage (V S) (Volts) 7.5 8 10 12 Bias Resistance ()2 7 3 3 5 6 7 5 Note=R BIAS provides DC bias stability over temperature. RF i n RF o u t 1 uF C6C5 VS R1 (R ) 1000 pF SBF4089Z 12nH BIAS

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Evaluation Board Layout Mounting Instructions 1. Note: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. USe a large ground pad area with many plated through-holes as shown. 4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. Pin Function Description 1R F I N RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of opera- tion. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 3R F O U T / B I A S RF output and bias pin. DC voltage is present on this pin therefore a DC-blocking capacitor is necessary for proper operation.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Suggested Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 0.3255 [8.27] 0.2560 [6.50] DE VICE CEN TER LINE 0.0775 [1.97] 0.0750 [1.91] INPUT/O UTPUT TRACE CE NTER LIN E 0.0420 [1.07] 0.0506 [1.29] 0.0800 [2.03] 0.0899 [2.28] 0.0270 [0.69] Ø0.0200 [Ø0.51] GND Via 9X 0.0250 [0.64] (2X) 0.0540 [1.37] (2X) 0.0640 [1.63] (2X) 0.0750 [1.91] (2X) 0.0540 [1.37] 0.0449 [1.14] NOTE: For broadband RF unconditional stability do not put vias under exposed gnd

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. SBF4089Z Part Identification.

Ordering Information

SBF4089Z 7” Reel with 1000 pieces SBF4089ZSQ Sample bag with 25 pieces SBF4089ZSR 7” Sample reel with 100 pieces SBF4089ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag