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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

■ Single Fixed 5V Supply ■ Patented Self Bias Circuit and Thermal Design ■ Hermetic Package for High- Reliability Applications ■ OIP3 = 35dBm at 1950MHz ■ P1dB = 19dBm at 1950MHz

Applications

■ Military and Space Communications ■ Industrial Applications ■ Aerospace and Defense SBB5082S

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 6 SBB5082S Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 100 mA Device Voltage (VD) 5.5 V RF Input Power +24 dBm Junction Temperature (TJ) +150 °C Operating Temperature Range -40 to +85 °C Storage Temperature Range -55 to +150 °C Moisture Sensitivity Level Hermetic ESD Rating - Human Body Model (HBM) Class 1C For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the Absolute Maximum Ratings table above. Bias conditions should also satisfy the following expression: IDVD < (TJ-TL) / RTH, j - l Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance Test Conditions: VD = 5V, ID = 71mA Typ. OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm, TL = 25°C, ZS = ZL = 50Ω, Tested with Bias Tees Small Signal Gain 18 20 22 dB 1950MHz 17 dB 4GHz Output Power at 1dB Compression 18 19 22 dBm 1950MHz OIP3 33 35 dBm F1 = 1950MHz, F2 = 1951MHz Input Return Loss 10 15 dB 1950MHz 13 dB 4GHz Output Return Loss 10 14 dB 1950MHz 8 dB 4GHz Reverse Isolation 17 22.5 dB 1950MHz Noise Figure 4.2 6.0 dB 1600MHz Operating Voltage 5.0 V Operating Current 60 71 92.0 mA Thermal Resistance 87 °C/W Junction to case

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 6 SBB5082S Typical Performance

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 6 SBB5082S Typical Performance (continued)

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 6 SBB5082S Package Drawing Pin Names and Descriptions Pin Name Description 1 RFIN RF input pin. This pin requires the use of an external blocking capacitor chosen for the frequency of operation. 2 RFOUT/DC Bias RF output and bias pin. This pin requires the use of an external blocking capacitor chosen for the frequency of operation. Package Paddle GND Package backside must be connected to RF/DC ground.

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131119 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 6 SBB5082S Typical Application Schematic